Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Minimum Diode Capacitance | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Yageo |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3000 W |
7.02 V |
AVALANCHE |
800 uA |
1 |
6 V |
SMALL OUTLINE |
6 V |
150 Cel |
-55 Cel |
Tin (Sn) |
R-PDSO-C2 |
1 |
BIDIRECTIONAL |
6.5 W |
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN |
DO-214AB |
10.3 V |
6.67 V |
e3 |
40 |
260 |
SILICON |
7.37 V |
IEC-61000-4-2; UL CERTIFIED |
|||||||||||||
|
Eaton Corporation |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
200 W |
28.1 V |
AVALANCHE |
1 uA |
1 |
24 V |
SMALL OUTLINE |
24 V |
150 Cel |
-55 Cel |
R-PDSO-F2 |
1 |
BIDIRECTIONAL |
EXCELLENT CLAMPING CAPABILITY |
38.9 V |
26.7 V |
40 |
260 |
SILICON |
29.5 V |
||||||||||||||||||
Semikron International |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1500 W |
400 V |
AVALANCHE |
5 uA |
1 |
LONG FORM |
Transient Suppressors |
342 V |
175 Cel |
Matte Tin (Sn) |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
390 pF |
UL RECOGNIZED |
DO-201 |
706 V |
380 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
420 V |
UL RECOGNIZED |
|||||||||||||
First Components International |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1500 W |
400 V |
AVALANCHE |
5 uA |
1 |
LONG FORM |
Transient Suppressors |
342 V |
175 Cel |
Matte Tin (Sn) |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
390 pF |
UL RECOGNIZED |
DO-201 |
706 V |
380 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
420 V |
UL RECOGNIZED |
|||||||||||||
Multicomp Pro |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1500 W |
AVALANCHE |
1 |
LONG FORM |
342 V |
175 Cel |
-65 Cel |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN |
DO-201AE |
380 V |
SILICON |
420 V |
|||||||||||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1500 W |
16.4 V |
AVALANCHE |
1 uA |
1 |
14 V |
SMALL OUTLINE |
14 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
PRSM-MIN |
DO-214AA |
23.2 V |
15.6 V |
e3 |
SILICON |
17.2 V |
IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED |
||||||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5000 W |
38.65 V |
AVALANCHE |
1 |
LONG FORM |
Transient Suppressors |
33 V |
175 Cel |
-55 Cel |
Matte Tin (Sn) |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
8 W |
EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY |
53.3 V |
36.7 V |
e3 |
NOT APPLICABLE |
NOT APPLICABLE |
SILICON |
40.6 V |
|||||||||||||||
|
Wurth Elektronik |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3000 W |
AVALANCHE |
1 |
SMALL OUTLINE |
150 Cel |
-65 Cel |
R-PDSO-C2 |
BIDIRECTIONAL |
6.5 W |
UL APPROVED |
DO-214AB |
111.15 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
122.85 V |
UL APPROVED |
|||||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
500 W |
AVALANCHE |
50 uA |
1 |
5.7 V |
LONG FORM |
5.7 V |
175 Cel |
-55 Cel |
TIN LEAD |
O-LELF-R2 |
BIDIRECTIONAL |
Qualified |
2 W |
HIGH RELIABILITY |
11.2 V |
7.13 V |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
3.5 V |
220 V |
AVALANCHE |
1 uA |
1 |
185 V |
SMALL OUTLINE |
Transient Suppressors |
185 V |
150 Cel |
-65 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
EXCELLENT CLAMPING CAPABILITY |
DO-214AA |
328 V |
209 V |
e3 |
30 |
260 |
SILICON |
231 V |
||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
400 W |
3.5 V |
63.15 V |
AVALANCHE |
1 uA |
1 |
54 V |
SMALL OUTLINE |
Transient Suppressors |
54 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
3.3 W |
EXCELLENT CLAMPING CAPABILITY |
DO-214AC |
87.1 V |
60 V |
e3 |
30 |
260 |
SILICON |
66.3 V |
UL RECOGNIZED |
||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
AVALANCHE |
1 |
SMALL OUTLINE |
12 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
5 W |
HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY |
13.3 V |
e3 |
260 |
SILICON |
15.3 V |
AEC-Q101 |
|||||||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1500 W |
15.15 V |
AVALANCHE |
1 uA |
1 |
13 V |
SMALL OUTLINE |
13 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
BIDIRECTIONAL |
6.5 W |
EXCELLENT CLAMPING CAPABILITY; HIGH RELIABILITY |
DO-214AB |
21.5 V |
14.4 V |
e3 |
40 |
260 |
SILICON |
15.9 V |
MIL-PRF-19500; MIL-STD-750; UL RECOGNIZED |
|||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1000 W |
2.5 V |
35.1 V |
AVALANCHE |
.1 uA |
1 |
30 V |
SMALL OUTLINE |
30 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
EXCELLENT CLAMPING CAPABILITY, LOW NOISE |
DO-219AB |
48.4 V |
33.3 V |
e3 |
30 |
260 |
SILICON |
36.9 V |
AEC-Q101; IEC-61000-4-5 |
|||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1000 W |
2.5 V |
35.1 V |
AVALANCHE |
.1 uA |
1 |
30 V |
SMALL OUTLINE |
30 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
EXCELLENT CLAMPING CAPABILITY, LOW NOISE |
DO-219AB |
48.4 V |
33.3 V |
e3 |
30 |
260 |
SILICON |
36.9 V |
IEC-61000-4-5 |
|||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1000 W |
AVALANCHE |
1 |
SMALL OUTLINE |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
PATENTED DEVICE |
DO-219 |
64.4 V |
e3 |
40 |
260 |
SILICON |
||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
39.5 V |
ZENER |
1 |
SMALL OUTLINE |
Transient Suppressors |
33.3 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-C2 |
1 |
BIDIRECTIONAL |
.55 W |
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW ZENER IMPEDANCE |
53.9 V |
37.1 V |
e3 |
30 |
260 |
SILICON |
41 V |
AEC-Q101 |
|||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
15000 W |
AVALANCHE |
1 |
LONG FORM |
Transient Suppressors |
130 V |
175 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
BIDIRECTIONAL |
ISOLATED |
Not Qualified |
8 W |
EXCELLENT CLAMPING CAPABILITY |
208.3 V |
145.2 V |
e3 |
40 |
260 |
SILICON |
159 V |
UL RECOGNIZED |
||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
15000 W |
AVALANCHE |
1 |
LONG FORM |
130 V |
175 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
BIDIRECTIONAL |
ISOLATED |
8 W |
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY |
145.2 V |
e3 |
SILICON |
159 V |
IEC-61000-4-2, 4-4; UL RECOGNIZED |
||||||||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
15000 W |
152.1 V |
AVALANCHE |
2 uA |
1 |
130 V |
LONG FORM |
130 V |
175 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
BIDIRECTIONAL |
ISOLATED |
8 W |
EXCELLENT CLAMPING CAPABILITY; HIGH RELIABILITY |
208.3 V |
145.2 V |
e3 |
SILICON |
159 V |
IEC-61000-4-2,4-4; MIL-STD-750; UL RECOGNIZED |
||||||||||||||||
|
Yageo |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
15000 W |
153.725 V |
AVALANCHE |
2 uA |
1 |
130 V |
LONG FORM |
130 V |
150 Cel |
-55 Cel |
O-PALF-W2 |
1 |
BIDIRECTIONAL |
ISOLATED |
8 W |
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN |
208.3 V |
145.2 V |
10 |
265 |
SILICON |
162.25 V |
IEC-61000-4-2; MIL-STD-750; UL CERTIFIED |
|||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
15000 W |
AVALANCHE |
1 |
LONG FORM |
130 V |
175 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
BIDIRECTIONAL |
ISOLATED |
Not Qualified |
8 W |
145.2 V |
e3 |
SILICON |
152.46 V |
||||||||||||||||||||
Digitron Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
15000 W |
AVALANCHE |
10 uA |
2 |
130 V |
LONG FORM |
130 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
BIDIRECTIONAL |
ISOLATED |
1.56 W |
HIGH RELIABILITY |
209 V |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||
|
Bourns |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5000 W |
17.6 V |
AVALANCHE |
2 uA |
1 |
15 V |
SMALL OUTLINE |
15 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-C2 |
1 |
BIDIRECTIONAL |
6.5 W |
PRSM-MIN |
DO-214AB |
31.7 V |
16.7 V |
e3 |
SILICON |
18.5 V |
AEC-Q101; UL RECOGNIZED |
|||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
465 V |
AVALANCHE |
10 uA |
1 |
430 V |
430 V |
125 Cel |
-55 Cel |
R-X(NULL)-T2 |
BIDIRECTIONAL |
ISOLATED |
625 V |
440 V |
SILICON |
490 V |
IEC-61000-4-2, 4-4, 4-5; UL RECOGNIZED |
|||||||||||||||||||||||
|
STMicroelectronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5000 W |
69 V |
AVALANCHE |
5 uA |
1 |
LONG FORM |
Transient Suppressors |
56 V |
175 Cel |
MATTE TIN |
O-PALF-W2 |
BIDIRECTIONAL |
ISOLATED |
Not Qualified |
6.5 W |
1700 pF |
129 V |
62.2 V |
e3 |
SILICON |
UL RECOGNIZED |
|||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
5 V |
AVALANCHE |
.1 uA |
1 |
3.3 V |
CHIP CARRIER |
3.3 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-XBCC-N2 |
1 |
BIDIRECTIONAL |
EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE |
6.5 V |
3.68 V |
e3 |
30 |
260 |
SILICON |
6.5 V |
IEC-61000-4-2 |
||||||||||||||||
Micro Commercial Components |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
400 W |
AVALANCHE |
1 |
SMALL OUTLINE |
28 V |
TIN LEAD |
R-PDSO-C2 |
UNIDIRECTIONAL |
Not Qualified |
1 W |
DO-214AC |
31.1 V |
e0 |
SILICON |
34.4 V |
UL RECOGNIZED |
|||||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
7.5 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
5.5 V |
150 Cel |
TIN |
R-PDSO-N2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
5.8 V |
e3 |
30 |
260 |
SILICON |
10 V |
||||||||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
400 W |
16.4 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
14 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1 W |
EXCELLENT CLAMPING CAPABILITY |
23.2 V |
15.6 V |
e3 |
30 |
260 |
SILICON |
17.2 V |
|||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
AVALANCHE |
1 |
SMALL OUTLINE |
100 V |
150 Cel |
-65 Cel |
R-PDSO-C2 |
BIDIRECTIONAL |
1.38 W |
DO-214AA |
111 V |
SILICON |
123 V |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||||||||
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
6.8 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
5 V |
TIN LEAD |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
5 W |
DO-214AA |
9.2 V |
6.4 V |
e0 |
260 |
SILICON |
7.23 V |
UL RECOGNIZED |
||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1000 W |
14 V |
ZENER |
1 |
SMALL OUTLINE |
Transient Suppressors |
12 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.385 W |
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE |
19.9 V |
13.3 V |
e3 |
30 |
260 |
SILICON |
14.7 V |
|||||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
34 W |
8.4 V |
AVALANCHE |
2 |
SMALL OUTLINE |
Transient Suppressors |
5.5 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PDSO-N2 |
BIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
17 V |
7 V |
e4 |
SILICON |
9.5 V |
|||||||||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1500 W |
AVALANCHE |
1 |
LONG FORM |
12.8 V |
175 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
6.5 W |
14.3 V |
e3 |
SILICON |
15.8 V |
UL RECOGNIZED |
||||||||||||||||||||
|
Protek Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
15000 W |
144 V |
AVALANCHE |
1 |
LONG FORM |
Transient Suppressors |
130 V |
TIN |
O-PALF-W2 |
BIDIRECTIONAL |
ISOLATED |
Not Qualified |
8 W |
209 V |
144 V |
270 |
SILICON |
|||||||||||||||||||||
|
Yageo |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
15000 W |
153.725 V |
AVALANCHE |
2 uA |
1 |
130 V |
LONG FORM |
130 V |
150 Cel |
-55 Cel |
O-PALF-W2 |
1 |
BIDIRECTIONAL |
ISOLATED |
8 W |
208.3 V |
145.2 V |
10 |
265 |
SILICON |
162.25 V |
|||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1500 W |
62 V |
ZENER |
1 |
LONG FORM |
Transient Suppressors |
53 V |
150 Cel |
-65 Cel |
TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
HIGH RELIABILITY |
85 V |
58.9 V |
e3 |
260 |
SILICON |
65.1 V |
UL RECOGNIZED |
|||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
ZENER |
1 |
SMALL OUTLINE |
Transient Suppressors |
12 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.55 W |
EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE |
DO-214AA |
19.9 V |
13.3 V |
e3 |
30 |
260 |
SILICON |
14.7 V |
UL RECOGNIZED |
||||||||||||||
|
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3000 W |
6.735 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
5 V |
175 Cel |
-55 Cel |
Tin (Sn) |
R-PDSO-C2 |
UNIDIRECTIONAL |
Not Qualified |
2 W |
9.2 V |
6.4 V |
e3 |
40 |
260 |
SILICON |
7.07 V |
|||||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
J BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5000 W |
35.05 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
30 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-J2 |
1 |
UNIDIRECTIONAL |
6.5 W |
EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED |
DO-214AB |
48.4 V |
33.3 V |
e3 |
40 |
260 |
SILICON |
36.8 V |
IEC-61000-4-2; IEC-61000-4-4 |
||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5000 W |
3.5 V |
46.75 V |
AVALANCHE |
2 uA |
1 |
40 V |
SMALL OUTLINE |
40 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
BIDIRECTIONAL |
6.5 W |
EXCELLENT CLAMPING CAPABILITY |
DO-214AB |
83.3 V |
44.4 V |
e3 |
40 |
260 |
SILICON |
49.1 V |
IEC-61000-4-2, 4-4; UL APPROVED |
||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1500 W |
AVALANCHE |
1 |
LONG FORM |
29.7 V |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
e0 |
20 |
225 |
SILICON |
MIL |
||||||||||||||||||||||||
|
Bourns |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
AVALANCHE |
1 |
SMALL OUTLINE |
25.6 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
BIDIRECTIONAL |
DO-214AA |
28.5 V |
e3 |
30 |
260 |
SILICON |
31.5 V |
IEC-61000-4-5 |
|||||||||||||||||||
|
Taiwan Semiconductor |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
30 V |
AVALANCHE |
1 uA |
1 |
25.6 V |
SMALL OUTLINE |
25.6 V |
150 Cel |
-55 Cel |
R-PDSO-C2 |
1 |
BIDIRECTIONAL |
3 W |
EXCELLENT CLAMPING CAPABILITY |
DO-214AA |
41.4 V |
28.5 V |
30 |
250 |
SILICON |
31.5 V |
AEC-Q101 |
|||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
45 W |
AVALANCHE |
1 |
SMALL OUTLINE |
5 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
BIDIRECTIONAL |
Not Qualified |
5.8 V |
e3 |
SILICON |
7.8 V |
|||||||||||||||||||||||
|
STMicroelectronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
250 V |
AVALANCHE |
.2 uA |
1 |
213 V |
SMALL OUTLINE |
213 V |
175 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
BIDIRECTIONAL |
DO-214AA |
400 V |
237 V |
e3 |
30 |
260 |
SILICON |
263 V |
AEC-Q101; IEC-61000-4-2 |
|||||||||||||||
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
600 W |
ZENER |
1 |
SMALL OUTLINE |
5 V |
150 Cel |
-55 Cel |
TIN LEAD |
R-PDSO-C2 |
UNIDIRECTIONAL |
Not Qualified |
DO-214AC |
6.4 V |
e0 |
SILICON |
7.07 V |
Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.
Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:
1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.
2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.
3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.
4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.
Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.