3 Transient Suppression Devices 1,185

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

NUP1105LT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

350 W

27.05 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

TO-236AB

44 V

25.7 V

e3

40

260

SILICON

28.4 V

SZUESD5.0DT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

.1 uA

2

5 V

SMALL OUTLINE

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F3

1

UNIDIRECTIONAL

.24 W

EXCELLENT CLAMPING CAPABILITY

6.2 V

e3

30

260

SILICON

AEC-Q100; IEC-61000-4-2, 4-4

PGB102ST23WR

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

2

SMALL OUTLINE

125 Cel

-65 Cel

MATTE TIN

R-PDSO-N3

1

BIDIRECTIONAL

Not Qualified

ULTRA-LOW CAPACITANCE

e3

30

260

SILICON

DESDA5V3LQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

250 W

AVALANCHE

2

SMALL OUTLINE

3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

5.3 V

e3

30

260

SILICON

5.9 V

AEC-Q101; IEC-61000-4-2

PGB102ST23WRHF

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

2

SMALL OUTLINE

MATTE TIN

R-PDSO-N3

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

e3

SILICON

MMBZ6V2ALT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

.9 V

6.2 V

ZENER

.5 uA

2

3 V

SMALL OUTLINE

3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.225 W

TO-236

8.7 V

5.89 V

e3

30

260

SILICON

6.51 V

IEC-61000-4-2

PSM712

Protek Devices

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

600 W

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

7 V

TIN LEAD

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

30 V

7.5 V

e0

245

SILICON

ESD7L5.0DT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F3

1

UNIDIRECTIONAL

Not Qualified

.15 W

5.4 V

e3

30

260

SILICON

ESDCAN01-2BLY

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

230 W

AVALANCHE

2

SMALL OUTLINE

24 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

BIDIRECTIONAL

25 V

e4

260

SILICON

30 V

AEC-Q101

MMBZ6V8AL-7-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

6.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

4.5 V

150 Cel

-65 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.225 W

9.6 V

6.46 V

e3

30

260

SILICON

7.14 V

MMBZ27VCL-7-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

1.1 V

27 V

AVALANCHE

.05 uA

2

22 V

SMALL OUTLINE

Transient Suppressors

22 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.225 W

38 V

25.65 V

e3

30

260

SILICON

28.35 V

SZMMBZ6V2ALT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

.9 V

6.2 V

ZENER

.5 uA

2

3 V

SMALL OUTLINE

3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.225 W

TO-236

8.7 V

5.89 V

e3

30

260

SILICON

6.51 V

AEC-Q101; IEC-61000-4-2

RCLAMP0502BATCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

125 W

6 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

25 V

6 V

e3

30

260

SILICON

MMBZ27VAL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

27 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

22 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.36 W

TO-236AB

40 V

25.65 V

e3

30

260

SILICON

28.35 V

TPD2E2U06DCKR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

75 W

7.5 V

AVALANCHE

.01 uA

1

2.5 V

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PDSO-G3

1

UNIDIRECTIONAL

LOW CAPACITANCE

9.7 V

6.5 V

e4

30

260

SILICON

8.5 V

IEC-61000-4-2, 4-5

PESD24VS2UT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

160 W

27 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

26.5 V

e3

30

260

SILICON

27.5 V

SZUESD3.3DT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

1 uA

2

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F3

1

UNIDIRECTIONAL

.24 W

EXCELLENT CLAMPING CAPABILITY

5 V

e3

30

260

SILICON

AEC-Q100; IEC-61000-4-2, 4-4

SZMMBZ9V1ALT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

AVALANCHE

2

SMALL OUTLINE

6 V

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.225 W

TO-236

8.65 V

e3

SILICON

9.56 V

AEC-Q101

SZMMBZ27VALT3G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

.9 V

27 V

ZENER

.05 uA

2

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.225 W

TO-236

40 V

25.65 V

e3

30

260

SILICON

28.35 V

AEC-Q101; IEC-61000-4-2

PESD3V3L2BT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

350 W

6.4 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

TIN

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

ULTRA LOW LEAKAGE CURRENT

TO-236AB

26 V

5.8 V

e3

30

260

SILICON

6.9 V

PESD3V3S2UT/ZLR

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

330 W

AVALANCHE

2

SMALL OUTLINE

3.3 V

150 Cel

-65 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

TO-236AB

5.2 V

e3

30

260

SILICON

6 V

IEC-60134; IEC-61000-4-2; IEC-61000-4-5

SZMMBZ12VALT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

.9 V

12 V

ZENER

.2 uA

2

8.5 V

SMALL OUTLINE

8.5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.225 W

TO-236

17 V

11.4 V

e3

30

260

SILICON

12.6 V

AEC-Q101; IEC-61000-4-2

MMBZ27VCL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

22 V

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

TO-236AB

38 V

e3

30

260

SILICON

ESDCAN02-2BWY

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

250 W

AVALANCHE

2

SMALL OUTLINE

26.5 V

175 Cel

-55 Cel

R-PDSO-G3

1

BIDIRECTIONAL

28.5 V

SILICON

31.7 V

AEC-Q101

ESDCAN06-2BWY

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

170 W

AVALANCHE

2

SMALL OUTLINE

35 V

175 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

BIDIRECTIONAL

38 V

e3

260

SILICON

42.2 V

AEC-Q101

NZL5V6AXV3T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

COMMON ANODE, 2 ELEMENTS

5.6 V

ZENER

2

SMALL OUTLINE

Voltage Reference Diodes

5 %

5 V

150 Cel

40 ohm

-55 Cel

MATTE TIN

R-PDSO-F3

1

UNIDIRECTIONAL

Not Qualified

.24 W

7.12 V

e3

30

260

SILICON

7.88 V

SZNUP2115LT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

200 W

29.1 V

ZENER

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-G3

1

BIDIRECTIONAL

TO-236

44 V

26.2 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

32 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

MMBZ5V6ALT116

ROHM

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

AVALANCHE

2

SMALL OUTLINE

3 V

150 Cel

R-PDSO-G3

1

UNIDIRECTIONAL

.225 W

HIGH RELIABILITY

5.32 V

10

260

SILICON

5.88 V

IEC-61000-4-2

ESD7002WTT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

16.5 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

16 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

33.9 V

16.5 V

e3

30

260

SILICON

IEC-61000-4-2

ESD122DMYR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

20 W

AVALANCHE

.01 uA

2

SMALL OUTLINE

3.6 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PSSO-N3

1

BIDIRECTIONAL

13.5 V

5 V

e4

30

260

SILICON

7.9 V

IEC-61000-4-2, 4-4, 4-5

ESD1P0RFWH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

70 V

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

12 V

e3

SILICON

15 V

PESD2IVN24-T

Nexperia

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

30.5 V

AVALANCHE

.05 uA

2

24 V

SMALL OUTLINE

24 V

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

BIDIRECTIONAL

TO-236AB

42 V

25.5 V

e3

30

260

SILICON

35.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

NUP2125WTT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

200 W

28.5 V

AVALANCHE

.1 uA

2

24 V

SMALL OUTLINE

24 V

150 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-G3

1

BIDIRECTIONAL

36.6 V

26.2 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

32 V

IEC-61000-4-2, 4-4, 4-5

SM12T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

300 W

14.53 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.225 W

TO-236AB

19 V

13.3 V

e3

40

260

SILICON

15.75 V

IEC-61000-4-2, 4-4, 4-5

MMBZ6V8AL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

6.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

4.5 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.29 W

TO-236AB

9.6 V

6.46 V

e3

30

260

SILICON

7.14 V

SL12T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

14.4 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.225 W

TO-236

24 V

13.3 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

15.5 V

SZSM05T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

300 W

6.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-G3

1

UNIDIRECTIONAL

.225 W

TO-236AB

9.8 V

6.2 V

e3

30

260

SILICON

7.3 V

AEC-Q101; IEC-61000-4-2, 4-4, 4-5

RCLAMP0582BQTCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

300 W

8.5 V

AVALANCHE

.1 uA

2

5 V

SMALL OUTLINE

5 V

105 Cel

-40 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

20 V

6 V

e3

30

260

SILICON

11 V

AEC-Q100; IEC-61000-4-2, 4-4

RCLAMP0582BQ.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

300 W

8.5 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

105 Cel

-40 Cel

MATTE TIN

R-PDSO-G3

UNIDIRECTIONAL

20 V

6 V

e3

SILICON

11 V

AEC-Q100; IEC-61000-4-2, 4-4

ESD7C5.0DT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1.1 V

AVALANCHE

.5 uA

2

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F3

1

UNIDIRECTIONAL

Not Qualified

.24 W

EXCELLENT CLAMPING CAPABILITY

11 V

e3

30

260

SILICON

IEC-61000-4-2

SZESD7002WTT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

16.5 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

16 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

33.9 V

16.5 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2

SZESD7C3.3DT5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1.1 V

AVALANCHE

1 uA

2

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

R-PDSO-F3

UNIDIRECTIONAL

.24 W

EXCELLENT CLAMPING CAPABILITY

5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101, IEC-61000-4-2

TPD2E2U06QDCKRQ1

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

75 W

AVALANCHE

.01 uA

1

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PDSO-G3

2

UNIDIRECTIONAL

9.7 V

6.5 V

e4

NOT SPECIFIED

260

SILICON

8.5 V

IEC-61000-4-2, 4-4, 4-5

VCAN33A2-03GHE3-08

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

140 W

38 V

AVALANCHE

.05 uA

2

33 V

SMALL OUTLINE

33 V

175 Cel

-55 Cel

Tin (Sn)

R-PDSO-G3

BIDIRECTIONAL

56 V

36 V

e3

SILICON

40 V

AEC-Q101, IEC-61000-4-2, 4-5

ESDA14V2L

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

300 W

AVALANCHE

5 uA

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

90 pF

14.2 V

e3

30

260

SILICON

15.8 V

SZMMBZ27VCLT3G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

ZENER

2

SMALL OUTLINE

22 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.225 W

TO-236AB

25.65 V

e3

30

260

SILICON

28.35 V

AEC-Q101

SP1305-02HTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

7 V

AVALANCHE

.5 uA

2

5 V

SMALL OUTLINE

5 V

125 Cel

-40 Cel

R-PDSO-G3

UNIDIRECTIONAL

TO-236

13.5 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

DESD2CAN2SOQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

230 W

AVALANCHE

2

SMALL OUTLINE

24 V

150 Cel

-65 Cel

MATTE TIN

R-PDSO-G3

1

BIDIRECTIONAL

.3 W

HIGH RELIABILITY

25.4 V

e3

30

260

SILICON

30.3 V

AEC-Q101; IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.