9 Transient Suppression Devices 18

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

824014885

Wurth Elektronik

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.2 V

7.5 V

AVALANCHE

1 uA

1

SMALL OUTLINE

85 Cel

-55 Cel

R-PDSO-N9

UNIDIRECTIONAL

10.5 V

6 V

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

ESD5V3U4UHDMIE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

5.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N9

1

UNIDIRECTIONAL

ANODE

6 V

e4

SILICON

SP7538PUTG

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

5 V

150 Cel

-40 Cel

R-PDSO-N9

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

MO-229

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-2, 4-4, 4-5

DT1240A-08LP3810-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

55 W

AVALANCHE

.5 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N9

UNIDIRECTIONAL

.35 W

5 V

e4

260

SILICON

IEC-61000-4-2, 4-5

D3V3F8U9LP3810-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

32 W

7 V

AVALANCHE

1 uA

8

3.3 V

SMALL OUTLINE

3.3 V

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N9

1

UNIDIRECTIONAL

.35 W

ULTRA LOW CAPACITANCE

5 V

5.5 V

e4

260

SILICON

IEC-61000-4-2,4-5; MIL-STD-202

D3V3X8U9LP3810-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 8 ELEMENTS

20 W

7 V

AVALANCHE

1 uA

8

3.3 V

SMALL OUTLINE

3.3 V

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N9

1

UNIDIRECTIONAL

.35 W

ULTRA LOW CAPACITANCE

7 V

5.5 V

e4

30

260

SILICON

IEC-61000-4-2,4-5

MAX3206EEWL+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

12

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN SILVER COPPER

S-PBGA-B9

1

UNIDIRECTIONAL

Not Qualified

1.13 W

e1

30

260

SILICON

HSP051-4N10

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.8 V

AVALANCHE

.1 uA

1

3.6 V

CHIP CARRIER

150 Cel

-40 Cel

R-PBCC-N9

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

10 V

4.5 V

SILICON

IEC61000-4-2

IP4285CZ9-TBB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

R-PDSO-N9

1

UNIDIRECTIONAL

ANODE

ULTRA LOW CAPACITANCE

6 V

SILICON

9 V

BGF127

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

UNSPECIFIED

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

GRID ARRAY

Transient Suppressors

5.3 V

TIN SILVER COPPER

S-XBGA-B9

UNIDIRECTIONAL

Not Qualified

17 V

6 V

e1

SILICON

BGF127E6328

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

UNSPECIFIED

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

GRID ARRAY

5.3 V

S-XBGA-B9

UNIDIRECTIONAL

6 V

SILICON

ESD5V3U4U-HDMI

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 4 ELEMENTS

6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5.3 V

R-XBCC-N9

1

UNIDIRECTIONAL

ANODE

Not Qualified

15 V

6 V

SILICON

ESD3V3U4ULCE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-40 Cel

GOLD

R-XBCC-N9

1

UNIDIRECTIONAL

11 V

e4

SILICON

ESD3V3U4ULC

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

TIN

R-PBCC-N9

1

UNIDIRECTIONAL

Not Qualified

12 V

e3

SILICON

DT1240-08LP3810-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

.5 uA

1

5.5 V

SMALL OUTLINE

5.5 V

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N9

1

UNIDIRECTIONAL

.35 W

11 V

6 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5; MIL-STD-202

MAX3205EAWL+T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

PLASTIC/EPOXY

SINGLE

.95 V

AVALANCHE

1

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

S-PBGA-B9

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

e1

30

260

SILICON

MAX3206EEBL+T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

12

GRID ARRAY

Other Diodes

85 Cel

-40 Cel

TIN SILVER COPPER NICKEL

S-PBGA-B9

1

UNIDIRECTIONAL

Not Qualified

.379 W

e2

30

260

SILICON

MAX3206EEBL-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

9

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

12

GRID ARRAY

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PBGA-B9

1

UNIDIRECTIONAL

Not Qualified

.379 W

e0

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.