Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Minimum Diode Capacitance | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
500 W |
AVALANCHE |
1 |
LONG FORM |
40.3 V |
TIN LEAD |
O-XELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
2.5 W |
e0 |
SILICON |
MIL-19500/551C |
|||||||||||||||||||||||||
|
Wurth Elektronik |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 uA |
1 |
12 V |
SMALL OUTLINE |
12 V |
85 Cel |
-40 Cel |
R-PDSO-R2 |
UNIDIRECTIONAL |
50 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-61000-4-2 |
|||||||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1500 W |
AVALANCHE |
1 |
LONG FORM |
51.6 V |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
3 W |
54 V |
e0 |
SILICON |
MIL-19500/552C |
||||||||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
500 W |
AVALANCHE |
1 |
LONG FORM |
6.2 V |
TIN LEAD |
O-LELF-R2 |
BIDIRECTIONAL |
ISOLATED |
Not Qualified |
2 W |
HIGH RELIABILITY |
7.79 V |
e0 |
SILICON |
MIL-19500/516 |
|||||||||||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
150 W |
AVALANCHE |
1 |
LONG FORM |
10 V |
175 Cel |
-55 Cel |
MATTE TIN |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
1 W |
HIGH RELIABILITY |
16.9 V |
11.4 V |
e3 |
10 |
260 |
SILICON |
IEC-61000-4-2, 4-4 |
||||||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
150 W |
AVALANCHE |
1 |
LONG FORM |
120 V |
175 Cel |
-55 Cel |
MATTE TIN |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
1 W |
HIGH RELIABILITY |
208 V |
138 V |
e3 |
10 |
260 |
SILICON |
IEC-61000-4-2, 4-4 |
||||||||||||||||||
|
Wurth Elektronik |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 uA |
1 |
5 V |
SMALL OUTLINE |
5 V |
85 Cel |
-40 Cel |
R-PDSO-R2 |
UNIDIRECTIONAL |
55 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-61000-4-2 |
|||||||||||||||||||||||
|
Wurth Elektronik |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
SMALL OUTLINE |
24 V |
85 Cel |
-40 Cel |
R-PDSO-R2 |
BIDIRECTIONAL |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
180 V |
IEC61000-4-2 |
|||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
300 W |
200 V |
.075 us |
AVALANCHE |
5 uA |
1 |
800 V |
LONG FORM |
800 V |
150 Cel |
-50 Cel |
TIN SILVER COPPER OVER NICKEL |
O-PELF-R2 |
1 |
BIDIRECTIONAL |
ISOLATED |
1 W |
DO-213AA |
287 V |
180 V |
10 |
260 |
SILICON |
220 V |
||||||||||||||
|
Wurth Elektronik |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
SMALL OUTLINE |
5 V |
85 Cel |
-40 Cel |
R-PDSO-R2 |
BIDIRECTIONAL |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
60 V |
IEC61000-4-2 |
|||||||||||||||||||||||||
|
Wurth Elektronik |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
SMALL OUTLINE |
12 V |
85 Cel |
-40 Cel |
R-PDSO-R2 |
BIDIRECTIONAL |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
60 V |
IEC61000-4-2 |
|||||||||||||||||||||||||
|
Panasonic |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 uA |
1 |
50 V |
SMALL OUTLINE |
50 V |
MATTE TIN OVER NICKEL |
R-PDSO-R2 |
BIDIRECTIONAL |
LOW CAPACITANCE |
e3 |
10 |
260 |
SILICON |
AEC-Q200 |
|||||||||||||||||||||||
|
KYOCERA AVX |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
72 W |
9 V |
AVALANCHE |
.1 uA |
1 |
7 V |
SMALL OUTLINE |
7 V |
125 Cel |
-55 Cel |
Tin (Sn) |
R-PDSO-R2 |
BIDIRECTIONAL |
7 pF |
LOW CAPACITANCE |
12 V |
e3 |
SILICON |
IEC-61000-4-2, 4-4 |
|||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
500 W |
AVALANCHE |
20 uA |
1 |
6.2 V |
LONG FORM |
Transient Suppressors |
6.2 V |
175 Cel |
-55 Cel |
TIN LEAD |
O-LELF-R2 |
BIDIRECTIONAL |
Qualified |
2 W |
HIGH RELIABILITY |
12.1 V |
7.79 V |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
500 W |
AVALANCHE |
20 uA |
1 |
6.2 V |
LONG FORM |
6.2 V |
175 Cel |
-55 Cel |
TIN LEAD |
O-LELF-R2 |
BIDIRECTIONAL |
Qualified |
2 W |
HIGH RELIABILITY |
12.1 V |
7.79 V |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
500 W |
AVALANCHE |
1 uA |
1 |
114 V |
LONG FORM |
114 V |
175 Cel |
-55 Cel |
TIN LEAD |
O-LELF-R2 |
BIDIRECTIONAL |
Qualified |
2 W |
HIGH RELIABILITY |
206.3 V |
142.5 V |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1500 W |
AVALANCHE |
1 |
LONG FORM |
29.7 V |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
e0 |
SILICON |
MIL |
||||||||||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
GLASS |
SINGLE |
1500 W |
43.7 V |
AVALANCHE |
1 |
LONG FORM |
Transient Suppressors |
40.3 V |
TIN LEAD |
R-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
3 W |
63.5 V |
43 V |
e0 |
SILICON |
||||||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
500 W |
AVALANCHE |
20 uA |
1 |
6.9 V |
LONG FORM |
6.9 V |
175 Cel |
-55 Cel |
TIN LEAD |
O-LELF-R2 |
BIDIRECTIONAL |
Qualified |
2 W |
HIGH RELIABILITY |
13.4 V |
8.65 V |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
500 W |
AVALANCHE |
1 |
LONG FORM |
30.5 V |
175 Cel |
-55 Cel |
TIN LEAD |
O-XELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
2.5 W |
e0 |
SILICON |
MIL-19500/551C |
|||||||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1500 W |
AVALANCHE |
1 |
LONG FORM |
8.4 V |
TIN LEAD |
O-LELF-R2 |
BIDIRECTIONAL |
ISOLATED |
Not Qualified |
3 W |
HIGH RELIABILITY |
10.45 V |
e0 |
SILICON |
MIL-19500/516 |
|||||||||||||||||||||||
|
Wurth Elektronik |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
SMALL OUTLINE |
12 V |
85 Cel |
-40 Cel |
SILVER NICKEL TIN |
R-PDSO-R2 |
BIDIRECTIONAL |
e2 |
10 |
260 |
SILICON |
60 V |
||||||||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1500 W |
AVALANCHE |
1 |
LONG FORM |
32.7 V |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
e0 |
SILICON |
MIL |
||||||||||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1500 W |
AVALANCHE |
1 |
LONG FORM |
32.7 V |
TIN LEAD |
O-LELF-R2 |
BIDIRECTIONAL |
ISOLATED |
Not Qualified |
3 W |
HIGH RELIABILITY |
40.9 V |
e0 |
SILICON |
MIL-19500/516 |
|||||||||||||||||||||||
|
KYOCERA AVX |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
70 W |
AVALANCHE |
.1 uA |
1 |
3.3 V |
SMALL OUTLINE |
3.3 V |
125 Cel |
-55 Cel |
Tin (Sn) |
R-PDSO-R2 |
BIDIRECTIONAL |
7 pF |
LOW CAPACITANCE |
10 V |
4 V |
e3 |
SILICON |
IEC-61000-4-2, 4-4 |
|||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
500 W |
AVALANCHE |
1 uA |
1 |
25.1 V |
LONG FORM |
25.1 V |
175 Cel |
-55 Cel |
TIN LEAD |
O-LELF-R2 |
BIDIRECTIONAL |
Qualified |
2 W |
HIGH RELIABILITY |
45.7 V |
31.4 V |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||
|
KYOCERA AVX |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
96 W |
AVALANCHE |
.1 uA |
1 |
5 V |
SMALL OUTLINE |
5 V |
125 Cel |
-55 Cel |
Tin (Sn) |
R-PDSO-R2 |
BIDIRECTIONAL |
7 pF |
LOW CAPACITANCE |
12 V |
7.5 V |
e3 |
SILICON |
IEC-61000-4-2, 4-4 |
|||||||||||||||||||
|
Eaton Corporation |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
10 V |
AVALANCHE |
1 |
LONG FORM |
5 V |
R-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
6 pF |
LOW CAPACITANCE |
17 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-61000-4-2 |
||||||||||||||||||||||
|
KYOCERA AVX |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
130 W |
AVALANCHE |
.1 uA |
1 |
12 V |
SMALL OUTLINE |
12 V |
125 Cel |
-55 Cel |
Tin (Sn) |
R-PDSO-R2 |
BIDIRECTIONAL |
4 pF |
LOW CAPACITANCE |
22 V |
18 V |
e3 |
SILICON |
IEC-61000-4-2, 4-4 |
|||||||||||||||||||
|
KYOCERA AVX |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
45 W |
6.7 V |
AVALANCHE |
.1 uA |
1 |
5 V |
SMALL OUTLINE |
5 V |
125 Cel |
-55 Cel |
Tin (Sn) |
R-PDSO-R2 |
BIDIRECTIONAL |
.5 pF |
LOW CAPACITANCE |
15 V |
e3 |
SILICON |
IEC-61000-4-2, 4-4 |
|||||||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
AVALANCHE |
1 |
SMALL OUTLINE |
125 Cel |
-65 Cel |
R-PDSO-R2 |
BIDIRECTIONAL |
ULTRA LOW CAPACITANCE |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
TE Connectivity |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
SMALL OUTLINE |
6 V |
125 Cel |
-40 Cel |
R-PDSO-R2 |
BIDIRECTIONAL |
9 V |
NOT SPECIFIED |
260 |
SILICON |
IEC-61000-4-2 |
|||||||||||||||||||||||||
|
Inpaq Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
SMALL OUTLINE |
85 Cel |
-40 Cel |
SILVER |
R-PDSO-R2 |
BIDIRECTIONAL |
LOW CAPACITANCE |
e4 |
40 |
260 |
SILICON |
|||||||||||||||||||||||||
|
KYOCERA AVX |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
60 W |
AVALANCHE |
.1 uA |
1 |
5 V |
SMALL OUTLINE |
5 V |
125 Cel |
-55 Cel |
TIN |
R-PDSO-R2 |
BIDIRECTIONAL |
LOW CAPACITANCE |
16 V |
5.2 V |
e3 |
SILICON |
IEC-61000-4-2, 4-4 |
||||||||||||||||||||
|
KYOCERA AVX |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
46 W |
AVALANCHE |
.1 uA |
1 |
6.5 V |
SMALL OUTLINE |
6.5 V |
125 Cel |
-55 Cel |
TIN |
R-PDSO-R2 |
BIDIRECTIONAL |
LOW CAPACITANCE |
15.5 V |
7 V |
e3 |
SILICON |
IEC-61000-4-2, 4-4 |
||||||||||||||||||||
Microsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
500 W |
AVALANCHE |
1 |
LONG FORM |
Transient Suppressors |
171 V |
TIN LEAD |
O-PELF-R2 |
BIDIRECTIONAL |
ISOLATED |
Not Qualified |
3 W |
DO-213AB |
274 V |
190 V |
e0 |
SILICON |
210 V |
|||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
419 V |
280 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
46.2 V |
31 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
126 V |
85 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
31 V |
20.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
655 V |
440 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
1200 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
12.3 V |
7.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
305 V |
208 V |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
25.6 V |
16.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
65.5 V |
44 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
380 V |
251 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
300 W |
AVALANCHE |
5 uA |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.8 W |
459 V |
310 V |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
TRANS VOLTAGE SUPPRESSOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
100 W |
ZENER |
1 |
LONG FORM |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1.5 W |
e3 |
SILICON |
Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.
Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:
1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.
2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.
3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.
4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.
Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.