QUAD Transient Suppression Devices 19

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

TPD6E001RSER

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

FLATPACK

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PQFP-N10

1

UNIDIRECTIONAL

Not Qualified

MO-228UEFD

25 V

11 V

e4

30

260

SILICON

TPD6E001RSERG4

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

FLATPACK

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PQFP-N10

1

UNIDIRECTIONAL

Not Qualified

MO-228UEFD

25 V

11 V

e4

30

260

SILICON

ESD122DMXR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

20 W

AVALANCHE

.01 uA

2

FLATPACK

3.6 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PQFP-N3

1

BIDIRECTIONAL

13.5 V

5 V

e4

30

260

SILICON

7.9 V

IEC-61000-4-2, 4-4, 4-5

TPD6E001RSFR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

12

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

FLATPACK

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

S-PQFP-N12

1

UNIDIRECTIONAL

Not Qualified

MO-220WGGB

25 V

11 V

e4

30

260

SILICON

TPD6E004RSER

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

8

YES

SQUARE

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

FLATPACK

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

S-PQFP-N8

1

UNIDIRECTIONAL

Not Qualified

20 V

6 V

e4

30

260

SILICON

8 V

IEC-61000-4-2

TPD6E001RSFRG4

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

12

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

FLATPACK

Transient Suppressors

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

S-PQFP-N12

1

UNIDIRECTIONAL

Not Qualified

MO-220WGGB

105.5 V

11 V

e4

30

260

SILICON

IEC-61000-4-2

TPD6E004RSERG4

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

8

YES

SQUARE

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

FLATPACK

Transient Suppressors

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

S-PQFP-N8

1

UNIDIRECTIONAL

Not Qualified

6 V

e4

30

260

SILICON

8 V

IEC-61000-4-2

MAX3205EATE+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQCC-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e3

30

260

SILICON

MAX3208EATE+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQCC-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e3

30

260

SILICON

MAX3206EETC+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

12

YES

SQUARE

UNSPECIFIED

COMPLEX

.95 V

AVALANCHE

12

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQCC-N12

1

UNIDIRECTIONAL

Not Qualified

1.35 W

MO-220WGGB

e3

30

260

SILICON

MAX3205EATE+T

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQFP-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e3

30

260

SILICON

MAX3206EETC+

Analog Devices

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

12

YES

SQUARE

UNSPECIFIED

COMPLEX

.95 V

AVALANCHE

12

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

Matte Tin (Sn) - annealed

S-XQCC-N12

1

UNIDIRECTIONAL

Not Qualified

1.35 W

MO-220WGGB

e3

30

260

SILICON

ESD8024MNTAG

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

24

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 24 ELEMENTS

1.1 V

7 V

AVALANCHE

.5 uA

24

2.5 V

CHIP CARRIER

2.5 V

125 Cel

-55 Cel

MATTE TIN

S-PQCC-N24

1

UNIDIRECTIONAL

ANODE

ULTRA LOW CAPACITANCE

8 V

5.5 V

e3

30

260

SILICON

9 V

IEC-61000-4-2, 4-5

MAX3205EATE

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-XQFP-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e0

245

SILICON

MAX3205EATE-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

S-XQFP-N16

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

MAX3208EATE-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

S-XQFP-N16

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

MAX3208EATE

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-XQFP-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e0

245

SILICON

MAX3206EETC-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

12

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

12

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PQCC-N12

1

UNIDIRECTIONAL

Not Qualified

1.349 W

MO-220WGGB

e0

SILICON

PGB008CA10PR

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

10

YES

RECTANGULAR

GLASS

COMMON ANODE, 8 ELEMENTS

AVALANCHE

8

CHIP CARRIER

R-LQCC-N10

BIDIRECTIONAL

Not Qualified

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.