Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Minimum Diode Capacitance | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
10 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
17 W |
6.4 V |
AVALANCHE |
.01 uA |
4 |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PSSO-N10 |
1 |
BIDIRECTIONAL |
6.6 V |
5.5 V |
e4 |
30 |
260 |
SILICON |
7.5 V |
IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
50 W |
6.4 V |
AVALANCHE |
.1 uA |
1 |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PSSO-N2 |
1 |
BIDIRECTIONAL |
6.3 V |
e4 |
NOT SPECIFIED |
260 |
SILICON |
IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
10 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
40 W |
AVALANCHE |
.01 uA |
1 |
SMALL OUTLINE |
5.5 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PSSO-N10 |
2 |
UNIDIRECTIONAL |
14 V |
6.4 V |
e4 |
30 |
260 |
SILICON |
8.7 V |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||
|
STMicroelectronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
200 W |
3.6 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
150 Cel |
MATTE TIN |
S-PSSO-G1 |
1 |
UNIDIRECTIONAL |
ANODE |
Not Qualified |
2.5 W |
DO-216AA |
6.5 V |
3.6 V |
e3 |
260 |
SILICON |
||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
40 W |
6 V |
AVALANCHE |
.01 uA |
1 |
3.6 V |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PSSO-N2 |
1 |
UNIDIRECTIONAL |
6.8 V |
4.5 V |
e4 |
30 |
260 |
SILICON |
7.5 V |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5200 W |
42.1 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
36 V |
175 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PSSO-C1 |
1 |
UNIDIRECTIONAL |
ANODE |
Not Qualified |
8 W |
HIGH RELIABILITY, PD-CASE |
DO-218AB |
58.1 V |
40 V |
e3 |
30 |
245 |
SILICON |
44.2 V |
AEC-Q101 |
||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
10 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
17 W |
6.4 V |
AVALANCHE |
.01 uA |
4 |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PSSO-N10 |
2 |
BIDIRECTIONAL |
6.6 V |
5.5 V |
e4 |
30 |
260 |
SILICON |
7.5 V |
IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
20 W |
AVALANCHE |
.01 uA |
2 |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PSSO-N3 |
1 |
BIDIRECTIONAL |
13.5 V |
5 V |
e4 |
30 |
260 |
SILICON |
7.9 V |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
90 W |
AVALANCHE |
.1 uA |
1 |
5 V |
SMALL OUTLINE |
5.5 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PSSO-N2 |
1 |
BIDIRECTIONAL |
10 V |
6 V |
e4 |
30 |
260 |
SILICON |
IEC-61000-4-2, 4-5 |
||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
50 W |
6.4 V |
AVALANCHE |
.1 uA |
1 |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PSSO-N2 |
1 |
BIDIRECTIONAL |
6.3 V |
e4 |
NOT SPECIFIED |
260 |
SILICON |
IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5200 W |
AVALANCHE |
1 |
SMALL OUTLINE |
36 V |
175 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PSSO-C1 |
1 |
UNIDIRECTIONAL |
ANODE |
8 W |
HIGH RELIABILITY, PD-CASE |
DO-218AB |
40 V |
e3 |
30 |
245 |
SILICON |
44.2 V |
AEC-Q101 |
||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
36 W |
AVALANCHE |
.01 uA |
1 |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PSSO-N2 |
1 |
UNIDIRECTIONAL |
6.5 V |
4.5 V |
e4 |
30 |
260 |
SILICON |
7.5 V |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
10 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 4 ELEMENTS |
17 W |
AVALANCHE |
.01 uA |
4 |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PSSO-N10 |
1 |
BIDIRECTIONAL |
8 V |
5 V |
e4 |
30 |
260 |
SILICON |
7.9 V |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
40 W |
AVALANCHE |
.01 uA |
1 |
SMALL OUTLINE |
5.5 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PSSO-N2 |
1 |
UNIDIRECTIONAL |
23 V |
6.4 V |
e4 |
30 |
260 |
SILICON |
8.7 V |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
67 W |
AVALANCHE |
.01 uA |
1 |
SMALL OUTLINE |
5.5 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PSSO-N2 |
1 |
BIDIRECTIONAL |
15 V |
7.5 V |
e4 |
NOT SPECIFIED |
260 |
SILICON |
9.1 V |
IEC-61000-4-2, 4-4, 4-5 |
||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
27 W |
6.4 V |
AVALANCHE |
.01 uA |
1 |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PSSO-N2 |
1 |
BIDIRECTIONAL |
7 V |
e4 |
30 |
260 |
SILICON |
IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||||
|
STMicroelectronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
200 W |
6.8 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
150 Cel |
Matte Tin (Sn) - annealed |
S-PSSO-G1 |
1 |
UNIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
DO-216AA |
9.2 V |
6.4 V |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||
|
Taiwan Semiconductor |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
6600 W |
1.8 V |
21.05 V |
AVALANCHE |
150 uA |
1 |
18 V |
SMALL OUTLINE |
18 V |
175 Cel |
-55 Cel |
MATTE TIN |
R-PSSO-C1 |
1 |
UNIDIRECTIONAL |
8 W |
HIGH RELIABILITY |
DO-218AB |
29.2 V |
20 V |
e3 |
SILICON |
22.1 V |
AEC-Q101; IEC-61000-4-2 |
||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
30000 W |
91.25 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
78 V |
150 Cel |
-55 Cel |
MATTE TIN |
S-PSSO-G1 |
1 |
BIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
126 V |
86.7 V |
e3 |
SILICON |
95.8 V |
MIL-19500 |
|||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
6500 W |
AVALANCHE |
1 |
SMALL OUTLINE |
33 V |
150 Cel |
-55 Cel |
TIN LEAD |
S-PSSO-G1 |
BIDIRECTIONAL |
CATHODE |
2.5 W |
HIGH RELIABILITY |
36.7 V |
e0 |
SILICON |
40.6 V |
AEC-Q101; MIL-19500 |
|||||||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 W |
6.2 V |
AVALANCHE |
.01 uA |
1 |
SMALL OUTLINE |
3.6 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PSSO-N2 |
1 |
UNIDIRECTIONAL |
5.3 V |
4.5 V |
e4 |
NOT SPECIFIED |
260 |
SILICON |
7.5 V |
IEC-61000-4-2, 4-4, 4-5 |
|||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
7500 W |
38.65 V |
AVALANCHE |
10 uA |
1 |
33 V |
SMALL OUTLINE |
33 V |
150 Cel |
-55 Cel |
TIN LEAD |
S-PSSO-G1 |
1 |
BIDIRECTIONAL |
CATHODE |
2.5 W |
HIGH RELIABILITY |
53.3 V |
36.7 V |
e0 |
SILICON |
40.6 V |
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500 |
||||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30000 W |
59.7 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
51 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PSSO-G1 |
1 |
BIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
82.4 V |
56.7 V |
e3 |
SILICON |
62.7 V |
||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
15000 W |
38.65 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
33 V |
150 Cel |
-55 Cel |
TIN LEAD |
R-PSSO-G1 |
1 |
UNIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
53.3 V |
36.7 V |
e0 |
SILICON |
40.6 V |
MIL-19500 |
||||||||||||||||
|
Texas Instruments |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
NO LEAD |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
6 V |
AVALANCHE |
.1 uA |
Transient Suppressors |
5 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PSSO-N2 |
1 |
BIDIRECTIONAL |
10 V |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5200 W |
AVALANCHE |
1 |
SMALL OUTLINE |
36 V |
175 Cel |
-55 Cel |
MATTE TIN |
R-PSSO-C1 |
1 |
UNIDIRECTIONAL |
ANODE |
Not Qualified |
8 W |
LOW LEAKAGE CURRENT |
DO-218AB |
40 V |
e3 |
SILICON |
44.2 V |
||||||||||||||||||
|
Micro Commercial Components |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
6600 W |
AVALANCHE |
1 |
SMALL OUTLINE |
36 V |
175 Cel |
-55 Cel |
MATTE TIN |
R-PSSO-C1 |
1 |
UNIDIRECTIONAL |
ANODE |
8 W |
DO-218AB |
58.1 V |
40 V |
e3 |
10 |
260 |
SILICON |
44.2 V |
AEC-Q101; UL RECOGNIZED |
||||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1800 W |
1.8 V |
35.05 V |
AVALANCHE |
50 uA |
1 |
30 V |
SMALL OUTLINE |
30 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PSSO-C1 |
2 |
UNIDIRECTIONAL |
6 W |
EXCELLENT CLAMPING CAPABILITY |
48.4 V |
33.3 V |
e3 |
30 |
260 |
SILICON |
36.8 V |
AEC-Q101; IEC-61000-4-2, 4-4; UL RECOGNIZED |
|||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
30000 W |
50.3 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
43 V |
150 Cel |
-55 Cel |
S-PSSO-G1 |
BIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
69.4 V |
47.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
52.8 V |
MIL-19500 |
||||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30000 W |
50.3 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
43 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PSSO-G1 |
1 |
BIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
69.4 V |
47.8 V |
e3 |
SILICON |
52.8 V |
||||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1800 W |
1.8 V |
38.65 V |
AVALANCHE |
50 uA |
1 |
33 V |
SMALL OUTLINE |
33 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PSSO-C1 |
2 |
UNIDIRECTIONAL |
6 W |
EXCELLENT CLAMPING CAPABILITY |
53.3 V |
36.7 V |
e3 |
30 |
260 |
SILICON |
40.6 V |
AEC-Q101; IEC-61000-4-2, 4-4; UL RECOGNIZED |
|||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30000 W |
35.05 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
30 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PSSO-G1 |
1 |
BIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
48.8 V |
33.3 V |
e3 |
SILICON |
36.8 V |
||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
6500 W |
38.65 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
33 V |
150 Cel |
-55 Cel |
TIN LEAD |
S-PSSO-G1 |
UNIDIRECTIONAL |
CATHODE |
2.5 W |
HIGH RELIABILITY |
53.3 V |
36.7 V |
e0 |
SILICON |
40.6 V |
AEC-Q101; MIL-19500 |
||||||||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
6600 W |
42.1 V |
AVALANCHE |
150 uA |
1 |
36 V |
SMALL OUTLINE |
36 V |
175 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PSSO-C1 |
1 |
UNIDIRECTIONAL |
ANODE |
8 W |
HIGH RELIABILITY |
DO-218AC |
58.1 V |
40 V |
e3 |
30 |
245 |
SILICON |
44.2 V |
AEC-Q101 |
||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30000 W |
91.25 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
78 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PSSO-G1 |
1 |
BIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
126 V |
86.7 V |
e3 |
SILICON |
95.8 V |
||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30000 W |
59.7 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
51 V |
150 Cel |
-65 Cel |
TIN LEAD |
R-PSSO-G1 |
1 |
BIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
82.4 V |
56.7 V |
e0 |
SILICON |
62.7 V |
|||||||||||||||||
|
Bourns |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
6600 W |
42.1 V |
AVALANCHE |
10 uA |
1 |
36 V |
SMALL OUTLINE |
36 V |
175 Cel |
-55 Cel |
R-PSSO-C1 |
UNIDIRECTIONAL |
8 W |
PD-CASE |
DO-218 |
40 V |
SILICON |
44.2 V |
AEC-Q101; IATF 16949 |
|||||||||||||||||||
|
Continental Device India |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
6600 W |
42.1 V |
AVALANCHE |
10 uA |
1 |
36 V |
SMALL OUTLINE |
36 V |
175 Cel |
-55 Cel |
R-PSSO-C1 |
UNIDIRECTIONAL |
8 W |
PD-CASE |
DO-218 |
40 V |
SILICON |
44.2 V |
AEC-Q101; IATF 16949 |
|||||||||||||||||||
|
Eaton Corporation |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
6600 W |
42.1 V |
AVALANCHE |
5 uA |
1 |
36 V |
SMALL OUTLINE |
36 V |
175 Cel |
-55 Cel |
R-PSSO-C1 |
UNIDIRECTIONAL |
8 W |
EXCELLENT CLAMPING CAPABILITY |
DO-218AB |
58.1 V |
40 V |
SILICON |
44.2 V |
AEC-Q101 |
||||||||||||||||||
|
Bourns |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
15000 W |
65.15 V |
AVALANCHE |
10 uA |
1 |
58 V |
SMALL OUTLINE |
58 V |
175 Cel |
-55 Cel |
R-PSSO-C1 |
1 |
BIDIRECTIONAL |
8 W |
PD-CASE |
DO-218 |
86.3 V |
59.1 V |
SILICON |
71.2 V |
AEC-Q101 |
|||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
6500 W |
50.3 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
43 V |
150 Cel |
-55 Cel |
TIN LEAD |
S-PSSO-G1 |
UNIDIRECTIONAL |
CATHODE |
2.5 W |
HIGH RELIABILITY |
69.4 V |
47.8 V |
e0 |
SILICON |
52.8 V |
AEC-Q101; MIL-19500 |
||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30000 W |
99.2 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
85 V |
150 Cel |
-65 Cel |
TIN LEAD |
R-PSSO-G1 |
1 |
BIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
137 V |
94.4 V |
e0 |
SILICON |
104 V |
|||||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
6500 W |
AVALANCHE |
1 |
SMALL OUTLINE |
30 V |
150 Cel |
-55 Cel |
MATTE TIN |
S-PSSO-G1 |
BIDIRECTIONAL |
CATHODE |
2.5 W |
HIGH RELIABILITY |
33.3 V |
e3 |
SILICON |
36.8 V |
AEC-Q101; MIL-19500 |
||||||||||||||||||||
|
Littelfuse |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
7000 W |
1.8 V |
38.65 V |
AVALANCHE |
50 uA |
1 |
33 V |
SMALL OUTLINE |
33 V |
175 Cel |
-55 Cel |
MATTE TIN |
R-PSSO-C1 |
1 |
UNIDIRECTIONAL |
8 W |
EXCELLENT CLAMPING CAPABILITY |
53.3 V |
36.7 V |
e3 |
30 |
260 |
SILICON |
40.6 V |
AEC-Q101; IEC-61000-4-2, 4-4; UL RECOGNIZED |
|||||||||||||
|
Vishay Intertechnology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
C BEND |
1 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5200 W |
AVALANCHE |
1 |
SMALL OUTLINE |
30 V |
175 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PSSO-C1 |
1 |
UNIDIRECTIONAL |
ANODE |
8 W |
HIGH RELIABILITY, PD-CASE |
DO-218AB |
33.3 V |
e3 |
30 |
245 |
SILICON |
36.8 V |
AEC-Q101 |
||||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
15000 W |
38.65 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
33 V |
150 Cel |
-55 Cel |
MATTE TIN |
S-PSSO-G1 |
1 |
BIDIRECTIONAL |
2.5 W |
HIGH RELIABILITY |
53.3 V |
36.7 V |
e3 |
SILICON |
40.6 V |
IEC-61000-4-2, 4-4, 4-5; MIL-19500 |
|||||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
30000 W |
59.7 V |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
51 V |
150 Cel |
-55 Cel |
MATTE TIN |
S-PSSO-G1 |
1 |
BIDIRECTIONAL |
CATHODE |
Not Qualified |
2.5 W |
HIGH RELIABILITY |
82.4 V |
56.7 V |
e3 |
SILICON |
62.7 V |
MIL-19500 |
|||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
SINGLE |
GULL WING |
1 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
6500 W |
17.6 V |
AVALANCHE |
10 uA |
1 |
15 V |
SMALL OUTLINE |
15 V |
150 Cel |
-55 Cel |
S-PSSO-G1 |
UNIDIRECTIONAL |
CATHODE |
2.5 W |
HIGH RELIABILITY |
24.4 V |
16.7 V |
SILICON |
18.5 V |
IEC-61000-4-2, 4-4, 4-5; MIL-19500 |
Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.
Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:
1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.
2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.
3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.
4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.
Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.