Diodes Incorporated Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

DM5W43AQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

3600 W

50.3 V

AVALANCHE

10 uA

1

43 V

SMALL OUTLINE

43 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

UNIDIRECTIONAL

ANODE

5 W

LOW POWER LOSS, PD-CASE, MIL-STD-202

DO-218AA

69.4 V

47.8 V

e3

SILICON

52.8 V

AEC-Q101; IATF 16949; ISO 7637-2; ISO 16750-2

DM5W40AQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

3600 W

46.75 V

AVALANCHE

10 uA

1

40 V

SMALL OUTLINE

40 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

UNIDIRECTIONAL

ANODE

5 W

LOW POWER LOSS, PD-CASE, MIL-STD-202

DO-218AA

64.5 V

44.4 V

e3

SILICON

49.1 V

AEC-Q101; IATF 16949; ISO 7637-2; ISO 16750-2

DM6W40AQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

46.75 V

AVALANCHE

10 uA

1

40 V

SMALL OUTLINE

40 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

UNIDIRECTIONAL

ANODE

6 W

LOW POWER LOSS, PD-CASE, MIL-STD-202

DO-218AA

64.5 V

44.4 V

e3

SILICON

49.1 V

AEC-Q101; IATF 16949; ISO 7637-2; ISO 16750-2

DM6W40A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

DM6W43AQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

4600 W

50.3 V

AVALANCHE

10 uA

1

43 V

SMALL OUTLINE

43 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

UNIDIRECTIONAL

ANODE

6 W

LOW POWER LOSS, PD-CASE, MIL-STD-202

DO-218AA

69.4 V

47.8 V

e3

SILICON

52.8 V

AEC-Q101; IATF 16949; ISO 7637-2; ISO 16750-2

D15V0S1U2LP1608A-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 V

AVALANCHE

.1 uA

1

15 V

CHIP CARRIER

15 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

ANODE

.3 W

35 V

17 V

e4

SILICON

23 V

IEC-61000-4-2

D6V3H1US2LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

500 W

7.95 V

AVALANCHE

.5 uA

1

6.3 V

CHIP CARRIER

6.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.25 W

10 V

6.4 V

e4

SILICON

9.5 V

IEC-61000-4-2, 4-5; MIL-STD-202

D8V0X1B2LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

1 uA

1

8 V

CHIP CARRIER

8 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.35 W

21 V

9.5 V

e4

260

SILICON

14.5 V

IEC-61000-4-2; MIL-STD-202

DM6W43A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

DM5W43A-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

C BEND

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

3600 W

50.3 V

AVALANCHE

10 uA

1

43 V

SMALL OUTLINE

43 V

175 Cel

-55 Cel

MATTE TIN

R-PSSO-C1

UNIDIRECTIONAL

ANODE

5 W

LOW POWER LOSS, PD-CASE

DO-218AA

69.4 V

47.8 V

e3

SILICON

52.8 V

ISO 7637-2; ISO 16750-2; MIL-STD-202

T3V3S5A-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

260

T12S5A-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

260

T5V0S5A-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

260

D2V5L1BS2LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1 uA

1

2.5 V

CHIP CARRIER

2.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

6 V

2.6 V

e4

260

SILICON

IEC-61000-4-2, 4-5; MIL-STD-202

D2V5H1BS2LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

NICKEL PALLADIUM GOLD

e4

D24V0H2U3SO-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

300 W

28.15 V

AVALANCHE

1 uA

2

24 V

SMALL OUTLINE

24 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G3

UNIDIRECTIONAL

.25 W

43 V

26.7 V

e3

SILICON

29.6 V

IEC-61000-4-2; MIL-STD-202

DRTR5V0U2SRQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

260

D18V0X1B2LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

22.95 V

AVALANCHE

1 uA

1

18 V

CHIP CARRIER

18 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

36 V

19.7 V

SILICON

26.2 V

AEC-Q101; IATF 16949; IEC-61000-4-2

D8V0L1B2LP3Q-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

DLP05LCA-7-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

D2V8F4U8MR-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DLPT05A-7-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

SD24Q-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

D2V5F4U8MR-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

e3

SD24CQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

315 W

AVALANCHE

.5 uA

1

24 V

SMALL OUTLINE

24 V

150 Cel

-65 Cel

MATTE TIN

R-PDSO-G2

BIDIRECTIONAL

.25 W

45 V

26.7 V

e3

SILICON

AEC-Q101; IATF 16949; IEC-61000-4-2; MIL-STD-202

SD03CQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

AVALANCHE

1 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-65 Cel

MATTE TIN

R-PDSO-G2

BIDIRECTIONAL

.25 W

11 V

4 V

e3

SILICON

AEC-Q101; IATF 16949; IEC-61000-4-2; MIL-STD-202

SD09-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

360 W

AVALANCHE

1 uA

1

9 V

SMALL OUTLINE

9 V

150 Cel

-65 Cel

R-PDSO-G2

UNIDIRECTIONAL

.25 W

18 V

10 V

SILICON

IEC-61000-4-2; MIL-STD-202

SD03-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

D30V0S1UG3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

P4SMAJ22ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

22 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

24.4 V

e3

260

SILICON

26.9 V

IEC-61000-4-2

P4SMAJ48ADF

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

1

e3

P4SMAJ9.0ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

9 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

10 V

e3

260

SILICON

11.5 V

IEC-61000-4-2

P4SMAJ85ADF

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

8.5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

9.44 V

e3

SILICON

10.82 V

P4SMAJ60ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

60 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

66.7 V

e3

260

SILICON

73.7 V

IEC-61000-4-2

P4SMAJ14ADF

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

14 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

15.6 V

e3

SILICON

17.2 V

P4SMAJ18ADF

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

18 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

20 V

e3

SILICON

22.1 V

P4SMAJ40ADF

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

MATTE TIN

1

e3

P4SMAJ13ADF

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

13 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

14.4 V

e3

SILICON

15.9 V

P4SMAJ33ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

33 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

36.7 V

e3

260

SILICON

40.6 V

IEC-61000-4-2

P4SMAJ16ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

16 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

17.8 V

e3

260

SILICON

19.7 V

IEC-61000-4-2

P4SMAJ26ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

26 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

28.9 V

e3

260

SILICON

31.9 V

IEC-61000-4-2

P4SMAJ8.0ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

8 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

8.89 V

e3

260

SILICON

9.83 V

IEC-61000-4-2

P4SMAJ36ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

36 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

40 V

e3

260

SILICON

44.2 V

IEC-61000-4-2

P4SMAJ28ADF

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

28 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

31.1 V

e3

SILICON

34.4 V

P4SMAJ7.5ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

7.5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

8.33 V

e3

260

SILICON

9.21 V

IEC-61000-4-2

P4SMAJ10ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

10 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

11.1 V

e3

260

SILICON

12.3 V

IEC-61000-4-2

P4SMAJ58ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

58 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

64.4 V

e3

260

SILICON

71.2 V

IEC-61000-4-2

P4SMAJ8.5ADF-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

AVALANCHE

1

SMALL OUTLINE

8.5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

1 W

EXCELLENT CLAMPING CAPABILITY

9.44 V

e3

260

SILICON

10.82 V

IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.