Infineon Technologies Transient Suppression Devices 348

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

ESD5V3U2U03FH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

6 V

AVALANCHE

.05 uA

2

5.3 V

SMALL OUTLINE

Transient Suppressors

5.3 V

125 Cel

-40 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

TR, 7 INCH: 3000

12 V

6 V

e3

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD101B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

.02 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

30 V

e4

40

260

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD112B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

7 V

e4

260

SILICON

TVS3V3L4UE6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

.05 uA

4

3.3 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

LOW CAPACITANCE

7.7 V

e3

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD108B1CSP0201XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

18000 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

18.5 V

IEC-61000-4-5

ESD101B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

e4

SILICON

ESD0P4RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

6 V

e4

SILICON

9 V

ESD200B1CSP0201XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-40 Cel

R-XBCC-N2

1

BIDIRECTIONAL

6 V

SILICON

10 V

ESD103B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

15 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

e4

SILICON

ESD112B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

7 V

e4

SILICON

ESD1P0RFWH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

70 V

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

12 V

e3

SILICON

15 V

ESD102U102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

.05 uA

1

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

11 V

e4

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD231B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

132 W

AVALANCHE

.02 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

10 V

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD131B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

26 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

6 V

SILICON

10.5 V

IEC-61000-4-2, 4-4, 4-5

ESD114U102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

YES

6 V

Transient Suppressors

5.3 V

GOLD

1

UNIDIRECTIONAL

28 V

e4

ESD105B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

22 V

e4

SILICON

14 V

DSL70E6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

245 W

AVALANCHE

4

SMALL OUTLINE

50 V

125 Cel

-55 Cel

TIN

R-PDSO-G4

1

UNIDIRECTIONAL

LOW CAPACITANCE

e3

SILICON

ESD203B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

115 W

AVALANCHE

.05 uA

1

12 V

CHIP CARRIER

13.2 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

23 V

e4

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD5V3U2U03LRHE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

COMMON ANODE, 2 ELEMENTS

6 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-40 Cel

PALLADIUM GOLD

R-XBCC-N3

1

UNIDIRECTIONAL

CATHODE

12 V

6 V

e4

SILICON

ESD103B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

15 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

e4

SILICON

ESD204B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

14 V

150 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

8.5 V

e4

SILICON

14 V

ESD0P8RFLE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

50 V

150 Cel

-55 Cel

GOLD

R-XBCC-N4

1

UNIDIRECTIONAL

12 V

e4

SILICON

15 V

ESD206B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

6 V

e4

SILICON

10 V

ESD5V3U4RRSH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

6.3 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

6 V

125 Cel

-55 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

15 V

6.3 V

e3

SILICON

ESD206B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

6 V

e4

SILICON

10 V

ESD241B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

25 W

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD119B1W01005E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

35 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD202B1CSP01005XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

36 W

8 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

17 V

6 V

SILICON

10 V

IEC-61000-4-2, 4-4, 4-5

ESD207B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

3.65 V

e4

SILICON

ESD144B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

1

ESD5V5U5ULCE6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

5.5 V

125 Cel

-40 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

12 V

e3

SILICON

ESD245B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

44 W

AVALANCHE

.03 uA

1

5.5 V

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

9 V

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD114U102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

YES

6 V

Transient Suppressors

5.3 V

GOLD

1

UNIDIRECTIONAL

28 V

e4

ESD24VS2UE6327HTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

230 W

AVALANCHE

2

SMALL OUTLINE

24 V

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

LOW CAPACITANCE

26 V

e3

SILICON

32 V

ESD203B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

115 W

AVALANCHE

1

CHIP CARRIER

12 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

13.5 V

e4

SILICON

ESD221U102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

1

CHIP CARRIER

5.3 V

125 Cel

-55 Cel

GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

5.7 V

e4

SILICON

7.5 V

IEC-61000-4-5

ESD130B1W0201E6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

27.5 W

AVALANCHE

1

CHIP CARRIER

5.5 V

125 Cel

-55 Cel

R-XBCC-N2

1

BIDIRECTIONAL

SILICON

IEC-61000-4-2, 4-4, 4-5

ESD5V0S1U02VH6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

66 W

AVALANCHE

1

SMALL OUTLINE

5 V

125 Cel

-55 Cel

R-PDSO-F2

UNIDIRECTIONAL

5.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.5 V

ESD110B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

58 W

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

18.5 V

125 Cel

-40 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

ULTRA LOW CAPACITANCE

44 V

e4

SILICON

29 V

ESD311U102NE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

YES

17 V

Transient Suppressors

15 V

TIN

1

UNIDIRECTIONAL

29 V

e3

ESD113B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.6 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

e4

SILICON

ESD113B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

YES

Transient Suppressors

3.6 V

GOLD

1

BIDIRECTIONAL

8 V

e4

ESD218B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

67 W

AVALANCHE

1

CHIP CARRIER

24 V

150 Cel

-55 Cel

GOLD

R-XBCC-N2

1

BIDIRECTIONAL

LOW CAPACITANCE

24.3 V

e4

SILICON

30 V

IEC-61000-4-2, 4-4, 4-5

ESD3V3U1U02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

125 Cel

-55 Cel

GOLD

R-XBCC-N2

1

UNIDIRECTIONAL

12 V

5 V

e4

SILICON

ESD105B102ELSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.5 V

125 Cel

-55 Cel

R-PBCC-N2

1

BIDIRECTIONAL

22 V

SILICON

14 V

ESD3V3U1U02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5.3 V

125 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

12 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESD110B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

YES

Transient Suppressors

18.5 V

125 Cel

-40 Cel

GOLD

1

BIDIRECTIONAL

44 V

e4

ESD207B102ELE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

125 Cel

-40 Cel

GOLD

R-PBCC-N2

1

BIDIRECTIONAL

3.65 V

e4

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.