8 Varactor Diodes 12

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
SVC371	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMPLEX		5		SMALL OUTLINE	Varactors	16 V				R-PDSO-G8	Not Qualified	500 pF		8 %	16 V				SILICON	18.5
HN1V01H	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	2 BANKS, COMMON CATHODE, 2 ELEMENTS	.00000002 uA	4	16 V	SMALL OUTLINE	Signal Diodes	16 V	125 Cel	-55 Cel	Tin/Lead (Sn/Pb)	R-PDSO-G8	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR FOUR DEVICES	10.77 %	16 V	e0			SILICON	16.2
HN2V02H-B	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS	.02 uA	3	16 V	SMALL OUTLINE	Other Diodes	16 V	125 Cel	-55 Cel		R-PDSO-G8	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR THREE DEVICES	8.76 %	16 V		NOT SPECIFIED	240	SILICON	16.2
HN4V01K	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR		PLASTIC/EPOXY					SMALL OUTLINE						R-PDSO-G8	Not Qualified								SILICON
HN1V02H-A	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	.02 uA	2	16 V	SMALL OUTLINE	Other Diodes	16 V	125 Cel	-55 Cel		R-PDSO-G8	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR TWO DEVICES	8.72 %	16 V		NOT SPECIFIED	240	SILICON	16.2
HN9V01H	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR		PLASTIC/EPOXY					SMALL OUTLINE						R-PDSO-G8	Not Qualified								SILICON
HN2V02H	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS	.00000002 uA	3	16 V	SMALL OUTLINE	Other Diodes	16 V	125 Cel	-55 Cel	Tin/Lead (Sn/Pb)	R-PDSO-G8	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR THREE DEVICES	10.77 %	16 V	e0			SILICON	16.2
HN1V02H	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	.00000002 uA	2	16 V	SMALL OUTLINE	Other Diodes	16 V	125 Cel	-55 Cel		R-PDSO-G8	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR TWO DEVICES	10.77 %	16 V		NOT SPECIFIED	240	SILICON	16.2
HN1V01H-A	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	2 BANKS, COMMON CATHODE, 2 ELEMENTS	.02 uA	4	16 V	SMALL OUTLINE	Signal Diodes	16 V	125 Cel	-55 Cel	Tin/Lead (Sn/Pb)	R-PDSO-G8	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR FOUR DEVICES	8.72 %	16 V	e0			SILICON	16.2
HN2V02H-A	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS	.02 uA	3	16 V	SMALL OUTLINE	Other Diodes	16 V	125 Cel	-55 Cel		R-PDSO-G8	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR THREE DEVICES	8.72 %	16 V		NOT SPECIFIED	240	SILICON	16.2
HN1V02H-B	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	.02 uA	2	16 V	SMALL OUTLINE			125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-G8	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR TWO DEVICES	8.76 %	16 V	e0			SILICON	16.2
HN1V01H-B	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	2 BANKS, COMMON CATHODE, 2 ELEMENTS	.02 uA	4	16 V	SMALL OUTLINE	Signal Diodes	16 V	125 Cel	-55 Cel	Tin/Lead (Sn/Pb)	R-PDSO-G8	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR FOUR DEVICES	8.76 %	16 V	e0			SILICON	16.2

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.