RECTANGULAR Varactor Diodes 1,882

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
MMBV609LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	20 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	29 pF	HIGH Q	TO-236AB	10.34 %	20 V	e0	30	235	SILICON	1.8
MMVL809T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN LEAD	R-PDSO-G2	1	Not Qualified	.2 W	5.3 pF	HIGH RELIABILITY		15.09 %	20 V	e0		235	SILICON	1.8
SVC321SPAC	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	IN-LINE	Varactors	16 V	100 Cel			R-PSIP-T2							3 %	16 V				SILICON	15.5
MMBV2101L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	450	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3		Not Qualified	.225 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5
SVC364	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	2 BANKS, COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6		Not Qualified		52 pF			7.76 %	16 V				SILICON	17.5
MMBV2107LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0	30	235	SILICON	2.5
SVC381-TL-E	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		SMALL OUTLINE			125 Cel		Tin/Bismuth (Sn/Bi)	R-PDSO-G3	1			427.5 pF			4.09 %	16 V	e6			SILICON	15
MMBV109LT3G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-236AB	10.34 %	30 V	e3		260	SILICON	5
MMVL2101T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G2	1	Not Qualified	.2 W	6.8 pF	HIGH RELIABILITY		10 %	30 V	e0		235	SILICON	2.5
SVC236	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	70	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY	.05 uA	2	10 V	SMALL OUTLINE		16 V	125 Cel			R-PDSO-G3				97.095 pF				16 V				SILICON	5
MMBV2105LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V	150 Cel		TIN	R-PDSO-G3	1	Not Qualified	.225 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
MMBV2108LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	27 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0	30	235	SILICON	2.5
MMVL409T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			Tin/Lead (Sn/Pb)	R-PDSO-G2	1	Not Qualified	.2 W	29 pF	HIGH RELIABILITY		10.34 %	20 V	e0	30	235	SILICON	1.5
MMVL109T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G2	1	Not Qualified	.2 W	29 pF	HIGH RELIABILITY		10.34 %	30 V	e0	30	235	SILICON	5
SVC354	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMPLEX				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6		Not Qualified		52 pF			8 %	16 V				SILICON	17.5
SVC371	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMPLEX				5		SMALL OUTLINE	Varactors	16 V				R-PDSO-G8		Not Qualified		500 pF			8 %	16 V				SILICON	18.5
MMBV809LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	75	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	5.3 pF	HIGH RELIABILITY	TO-236AB	15.09 %	20 V	e0	30	235	SILICON	1.8
MMBV2109LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0	30	235	SILICON	2.5
SVC389-TL-E	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	MEDIUM FREQUENCY	.1 uA	2	9 V	SMALL OUTLINE		16 V	150 Cel		Tin/Bismuth (Sn/Bi)	R-PDSO-G3	1			497.5 pF			5.53 %	16 V	e6			SILICON	19.5
SMMBV809LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	75	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN LEAD	R-PDSO-G3	1	Not Qualified	.225 W	5.3 pF	HIGH RELIABILITY	TO-236AB	15.09 %	20 V	e0			SILICON	1.8
MMBV2109L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3		Not Qualified	.225 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5
MBV109T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel		TIN LEAD	R-PDSO-G3		Not Qualified	.28 W	29 pF			10.34 %	30 V	e0			SILICON	5
MMBV809LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	75	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	5.3 pF	HIGH RELIABILITY	TO-236AB	15.09 %	20 V	e3	30	260	SILICON	1.8
MMVL229AT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	15 V			TIN LEAD	R-PDSO-G2		Not Qualified		15 pF			6.67 %		e0			SILICON	2
MMBV109LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-236AB	10.34 %	30 V	e0	30	235	SILICON	5
MMBV809LT3	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	75	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN LEAD	R-PDSO-G3	1	Not Qualified	.225 W	5.3 pF	HIGH RELIABILITY	TO-236AB	15.09 %	20 V	e0		235	SILICON	1.8
SVC704	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY	.05 uA	1	10 V	SMALL OUTLINE		16 V	150 Cel			R-PDSO-F3				28 pF			7.14 %	16 V				SILICON	6
SVC203SPA	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR	60	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		IN-LINE					Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)	R-PSIP-T3		Not Qualified	.1 W				7.64 %	16 V				SILICON	2.1924
MMBV2105L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3		Not Qualified	.225 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5
SVC364M	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	2 BANKS, COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6		Not Qualified					3.31 %	16 V				SILICON	17.5
MMBV2109LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
MMBV409LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	29 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10.34 %	20 V	e0	30	235	SILICON	1.5
MMVL2105T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN	R-PDSO-G2	1	Not Qualified	.2 W	15 pF	HIGH RELIABILITY		10 %	30 V	e3			SILICON	2.5
SVC354R	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMPLEX				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6		Not Qualified					3.26 %	16 V				SILICON	17.5
MMVL3102T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2	1	Not Qualified	.2 W	22 pF	HIGH RELIABILITY		11.11 %	30 V	e3	30	260	SILICON	4.5
MMBV2101LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	450	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0	30	235	SILICON	2.5
MMBV432LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	14 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1	Not Qualified	.225 W	45.55 pF	HIGH Q, 1% MATCHING GUARANTEED	TO-236AB	5.6 %	14 V	e0	30	235	SILICON	1.5
MMBV2107LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1	Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
STVD901J	STMicroelectronics	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	6 V	150 Cel		MATTE TIN	R-PDSO-G2		Not Qualified		4 pF			10 %		e3			SILICON	2
BB181LX	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CHIP CARRIER			125 Cel	-55 Cel	TIN	R-PBCC-N2		Not Qualified		12.5 pF			36 %	32 V	e3			SILICON	12
BB901235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3		Not Qualified										SILICON	12
BB156	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1	Not Qualified		16 pF			10 %		e3	30	260	SILICON	2.7
BB148,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2		Not Qualified		39.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			30 V	e3			SILICON	14.5
BBY39235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3		Not Qualified		16.5 pF								SILICON	8
BB201T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3		Not Qualified		95 pF		TO-236AB	6.81 %		e3			SILICON	3.1
BBY39TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE						R-PDSO-G3		Not Qualified										SILICON	8
934055065115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN	R-PDSO-G2		Not Qualified		19.1 pF					e3			SILICON	1.45
BB153T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2		Not Qualified		38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		10 %	32 V	e3			SILICON	13.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.