SINGLE Varactor Diodes 64

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

1SV149

Toshiba

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

.05 uA

1

15 V

IN-LINE

125 Cel

Tin/Lead (Sn/Pb)

R-PSIP-T2

Not Qualified

2.5% MATCHED GROUP AVAILABLE

.5 %

15 V

e0

SILICON

15

SVC201SPA

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

R-PSIP-T2

Not Qualified

28.19 pF

HIGH Q

16 V

SILICON

2.2

SVC321SPAA

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

IN-LINE

Varactors

16 V

100 Cel

R-PSIP-T2

3 %

16 V

SILICON

15.5

SVC251SPA

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

R-PSIP-T3

Not Qualified

23 pF

12 V

SILICON

1.7

SVC323

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

L BAND

1

IN-LINE

Varactors

16 V

R-PSIP-T3

Not Qualified

462.8 pF

16 V

SILICON

17.5

SVC384T

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

IN-LINE

Varactors

33 V

125 Cel

R-PSIP-T3

Not Qualified

3.35 %

33 V

SILICON

17.5

SVC707

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

IN-LINE

Varactors

15 V

150 Cel

R-PSIP-T2

Not Qualified

19.92 pF

6.73 %

15 V

SILICON

SVC384S

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

IN-LINE

Varactors

33 V

125 Cel

R-PSIP-T3

Not Qualified

3.31 %

33 V

SILICON

17.5

SVC321SPAD

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

IN-LINE

Varactors

16 V

100 Cel

R-PSIP-T2

3 %

16 V

SILICON

15.5

SVC321SPA

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

IN-LINE

Varactors

16 V

100 Cel

R-PSIP-T2

Not Qualified

388.1 pF

16 V

SILICON

15.5

SVC321SPAB

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

IN-LINE

Varactors

16 V

100 Cel

R-PSIP-T2

3 %

16 V

SILICON

15.5

SVC321SPAC

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

IN-LINE

Varactors

16 V

100 Cel

R-PSIP-T2

3 %

16 V

SILICON

15.5

SVC203SPA

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

60

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

IN-LINE

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

R-PSIP-T3

Not Qualified

.1 W

7.64 %

16 V

SILICON

2.1924

ZC822M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

22 pF

SILICON

5

ZC825AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

68 pF

10 %

SILICON

5

ZC824AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

10 %

SILICON

5

ZC825N

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

68 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC822BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

22 pF

5 %

SILICON

5

ZC824AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

10 %

SILICON

5

ZC820BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

5 %

SILICON

4.5

ZC823M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

33 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC824BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

5 %

SILICON

5

ZC820AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

10 %

SILICON

4.5

ZC826M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

100 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC825M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

68 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC823BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

33 pF

5 %

SILICON

5

ZC823AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

33 pF

10 %

SILICON

5

ZC824M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

SILICON

5

ZC822N

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

22 pF

SILICON

5

ZC826N

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

100 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC825AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

68 pF

10 %

SILICON

5

ZC821BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

15 pF

5 %

SILICON

4.5

ZC821AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

15 pF

10 %

SILICON

4.5

ZC823N

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

33 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC823AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

33 pF

10 %

SILICON

5

ZC820AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

10 %

SILICON

4.5

ZC823BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

33 pF

5 %

SILICON

5

ZC824N

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

SILICON

5

ZC821N

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

15 pF

SILICON

4.5

ZC822AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

22 pF

10 %

SILICON

5

ZC822BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

22 pF

5 %

SILICON

5

ZC826AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

100 pF

10 %

SILICON

5

ZC825BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

68 pF

5 %

SILICON

5

ZC820BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

5 %

SILICON

4.5

ZC820M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

SILICON

4.5

ZC826BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

100 pF

5 %

SILICON

5

ZC824BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

5 %

SILICON

5

ZC821M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

15 pF

SILICON

4.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.