Diodes Incorporated Varactor Diodes 468

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	No. of Elements	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
ZC830ATA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					MATTE TIN	R-PDSO-G3		Not Qualified	.33 W	10 pF	LOW NOISE	10 %	25 V	e3			SILICON	4.5
ZMV933TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	.33 W	22.5 pF	LOW NOISE	20 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZC824BM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	47 pF		5 %					SILICON	5
ZC836TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	100 pF	LOW NOISE	20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZMV833	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE	Varactors	25 V	150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	33 pF		20 %	25 V	e3	30	260	SILICON	5
ZMV834TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	47 pF		20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
UZMV835BTC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G2		Not Qualified	.33 W	68 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZMV932TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	12 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	9.5 pF	LOW NOISE	10.53 %	12 V	e3	30	260	SILICON
ZMV830ATA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	10 pF	LOW NOISE	10 %	25 V	e3	30	260	SILICON	4.5
ZMV834A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE	Varactors	25 V	150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	47 pF			25 V	e3	30	260	SILICON	5
UZMV832BTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G2		Not Qualified	.33 W	22 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
FMMV2108TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	ABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	27 pF	LOW NOISE	10 %	30 V				SILICON	2.7
UZMV933TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	.33 W	22.5 pF	LOW NOISE	20 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZMV829ATC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G2		Not Qualified	.33 W	8.2 pF	LOW NOISE	10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.3
ZC835TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	68 pF	LOW NOISE	20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC821M	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	15 pF							SILICON	4.5
ZC831BTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	15 pF	LOW NOISE	5 %	25 V	e3	30	260	SILICON	4.5
FMMV2109	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	280	PLASTIC/EPOXY	SINGLE	ABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	33 pF	LOW NOISE	10.67 %	30 V				SILICON	2.7
ZMV834ATA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	47 pF	LOW NOISE	10 %	25 V	e3	30	260	SILICON	5
UZMV829ATA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G2		Not Qualified	.33 W	8.2 pF	LOW NOISE	10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.3
ZC824B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	47 pF		5 %	25 V				SILICON	5
ZMV835TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	68 pF		20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
UZC832ATA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	22 pF	LOW NOISE	10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZDC833ATC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	33 pF	LOW NOISE	10 %	25 V	e3	30	260	SILICON	5
ZC930TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	12 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	4.9 pF	LOW NOISE	12.24 %	12 V	e3	30	260	SILICON	3
ZC825BN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	68 pF		5 %					SILICON	5
UZMV933A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	.33 W	42 pF	HIGH RELIABILITY, LOW LEAKAGE CURRENT		12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZMV830B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE	Varactors	25 V	150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	10 pF		5 %	25 V	e3	30	260	SILICON	4.5
UZV831BV2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-F2		Not Qualified	.25 W	15 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.5
ZC821AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	15 pF		10 %					SILICON	4.5
FMMV105GTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					MATTE TIN	R-PDSO-G3		Not Qualified	.33 W		LOW NOISE	21.73 %	30 V	e3			SILICON	4
UZMV833ATC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G2		Not Qualified	.33 W	33 pF	LOW NOISE	10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC930TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified	.33 W	4.9 pF	LOW NOISE	12.24 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	3
ZC934ATC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	80	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified	.33 W		LOW NOISE		12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	3.8
ZV931V2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	7.15 pF	LOW NOISE	9.09 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZC820N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	10 pF							SILICON	4.5
UZC836ATC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	100 pF	LOW NOISE	10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
UZC836ATA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	100 pF	LOW NOISE	10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC836TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	100 pF	LOW NOISE	20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
FSD270TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	2	SMALL OUTLINE					MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	33 pF		10 %	25 V	e3	40	260	SILICON	5
ZMDC953TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	12 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	.3 W	33.5 pF		10.45 %	12 V	e3	30	260	SILICON	2
ZMDC831BTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE				YES		300							Varactors	25 V								15 pF					30	260
ZMV832A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE	Varactors	25 V	150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	22 pF			25 V	e3	30	260	SILICON	5
UZC932	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.33 W		HIGH RELIABILITY		12 V	e3	40	260	SILICON	3.091
ZC836BTC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.33 W	100 pF	LOW NOISE	5 %	25 V	e3	40	260	SILICON	5
UFMMV105GTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W		LOW NOISE	21.73 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4
ZC824	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	47 pF		20 %	25 V				SILICON	5
ZC829B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1	SMALL OUTLINE					MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	8.2 pF	LOW NOISE	5 %	25 V	e3			SILICON	4.3

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.