Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Maximum Voltage Temperature Coefficient | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Knee Impedance | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
8.5 mA |
SINGLE |
12.3 mV/Cel |
15 V |
ZENER |
.5 uA |
1 |
11 V |
LONG FORM |
5 % |
700 ohm |
175 Cel |
16 ohm |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.4 W |
METALLURGICALLY BONDED |
DO-204AH |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
1 mA |
SINGLE |
15 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
.25 mA |
SINGLE |
3.1 mV/Cel |
6.2 V |
ZENER |
10 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
1200 ohm |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
HIGH RELIABILTY |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
8.5 mA |
SINGLE |
12.3 mV/Cel |
15 V |
ZENER |
.5 uA |
1 |
11 V |
LONG FORM |
5 % |
700 ohm |
175 Cel |
16 ohm |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.4 W |
METALLURGICALLY BONDED |
DO-204AH |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||
Continental Device India |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
3 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
150 Cel |
R-PDSO-F2 |
UNIDIRECTIONAL |
.3 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
5.6 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
5.6 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
Sangdest Microelectronics (Nanjing) |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
6.2 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
SILICON |
||||||||||||||||||||||||||||
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
6.2 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
7 ohm |
-55 Cel |
Tin/Lead (Sn/Pb) |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
e0 |
30 |
235 |
SILICON |
||||||||||||||||||||
|
Diodes Incorporated |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
7.5 V |
.9 V |
ZENER |
3 uA |
1 |
6 V |
SMALL OUTLINE |
5 % |
500 ohm |
150 Cel |
6 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.37 W |
e3 |
10 |
260 |
SILICON |
||||||||||||||||
|
Diodes Incorporated |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
8.5 mA |
SINGLE |
15 V |
.9 V |
ZENER |
.1 uA |
1 |
11 V |
SMALL OUTLINE |
5 % |
600 ohm |
150 Cel |
16 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.37 W |
HGH RELIABILITY |
e3 |
10 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
7.8 mA |
SINGLE |
12.8 mV/Cel |
16 V |
ZENER |
.1 uA |
1 |
12 V |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
600 ohm |
150 Cel |
17 ohm |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
SILICON |
||||||||||||||||||
|
Diodes Incorporated |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5.2 mA |
SINGLE |
24 V |
.9 V |
ZENER |
.1 uA |
1 |
18 V |
SMALL OUTLINE |
5 % |
600 ohm |
150 Cel |
33 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.37 W |
HGH RELIABILITY |
e3 |
10 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
4.6 mA |
SINGLE |
27 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
41 ohm |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
4.5 mA |
SINGLE |
25.48 mV/Cel |
28 V |
ZENER |
.1 uA |
1 |
21 V |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
600 ohm |
150 Cel |
44 ohm |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
SILICON |
||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
10 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2.51 % |
150 Cel |
120 ohm |
-55 Cel |
TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||||
|
Panjit International |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2.36 % |
150 Cel |
60 ohm |
-55 Cel |
R-PDSO-F2 |
UNIDIRECTIONAL |
.4 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||
|
ROHM |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
40 mA |
SINGLE |
5.1 V |
ZENER |
20 uA |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5.56 % |
150 Cel |
8 ohm |
TIN SILVER COPPER |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1 W |
HIGH SURGE WITHSTAND LEVEL |
e1 |
10 |
260 |
SILICON |
||||||||||||||||||
|
Nexperia |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
14 V |
ZENER |
1 |
SMALL OUTLINE |
2 % |
TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.32 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 mA |
SINGLE |
36 V |
.9 V |
ZENER |
.05 uA |
1 |
25.2 V |
SMALL OUTLINE |
Voltage Reference Diodes |
5.56 % |
500 ohm |
150 Cel |
90 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.3 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
9.1 V |
.9 V |
ZENER |
.2 uA |
1 |
7 V |
SMALL OUTLINE |
Voltage Reference Diodes |
6.08 % |
160 ohm |
150 Cel |
15 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.3 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
5 mA |
SINGLE |
5.65 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2.65 % |
175 Cel |
40 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
DO-35 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||
|
Diotec Semiconductor Ag |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
2.5 mA |
SINGLE |
200 V |
ZENER |
1 |
LONG FORM |
2 % |
175 Cel |
-50 Cel |
O-PELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
1.3 W |
DO-213AB |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
37 mA |
SINGLE |
6.8 V |
ZENER |
10 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
700 ohm |
200 Cel |
3.5 ohm |
-65 Cel |
TIN |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e3 |
30 |
260 |
SILICON |
|||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
37 mA |
SINGLE |
6.8 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
DO-41 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
9.5 mA |
SINGLE |
27 V |
ZENER |
1 |
LONG FORM |
5 % |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
9.5 mA |
SINGLE |
27 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-204AL |
e0 |
SILICON |
||||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
9.5 mA |
SINGLE |
27 V |
ZENER |
5 uA |
1 |
20.6 V |
LONG FORM |
5 % |
750 ohm |
175 Cel |
35 ohm |
-65 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-204AL |
e3 |
SILICON |
MIL-STD-750 |
|||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
9.5 mA |
SINGLE |
27 V |
ZENER |
5 uA |
1 |
20.6 V |
LONG FORM |
Voltage Reference Diodes |
5 % |
750 ohm |
175 Cel |
35 ohm |
-65 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
1 W |
DO-204AL |
e3 |
SILICON |
MIL-STD-750 |
|||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
2.5 mA |
SINGLE |
100 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
DO-41 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
11 ohm |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
20 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
8 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-204AH |
e2 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
20 mA |
SINGLE |
5.084 mV/Cel |
8.2 V |
ZENER |
3 uA |
1 |
LONG FORM |
5 % |
200 Cel |
-65 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
DO-35 |
SILICON |
|||||||||||||||||||||||
National Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
20 mA |
SINGLE |
5.084 mV/Cel |
8.2 V |
ZENER |
3 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
500 ohm |
200 Cel |
8 ohm |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e0 |
SILICON |
|||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
20 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
8 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-204AH |
e2 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
20 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
8 ohm |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
8 ohm |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
8 ohm |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
TR, 7 INCH; 2000 |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
7.4 mA |
SINGLE |
17 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
19 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-204AH |
e2 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
7.4 mA |
SINGLE |
17 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
19 ohm |
Matte Tin (Sn) - annealed |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||
National Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
7.4 mA |
SINGLE |
14.28 mV/Cel |
17 V |
ZENER |
.1 uA |
1 |
LONG FORM |
5 % |
600 ohm |
200 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
SILICON |
|||||||||||||||||||||||
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
7.4 mA |
SINGLE |
14.28 mV/Cel |
17 V |
ZENER |
.1 uA |
1 |
LONG FORM |
5 % |
200 Cel |
-65 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
SILICON |
|||||||||||||||||||||||
Central Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
100 V |
ZENER |
1 |
LONG FORM |
TIN LEAD |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
INDUSTRY STANDARD |
DO-35 |
e0 |
SILICON |
||||||||||||||||||||||||||
Microsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
350 mA |
SINGLE |
3.6 V |
ZENER |
1 |
LONG FORM |
5 % |
150 Cel |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
e0 |
SILICON |
||||||||||||||||||||||||
|
Microsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
350 mA |
SINGLE |
3.6 V |
ZENER |
1 |
LONG FORM |
5 % |
150 Cel |
-65 Cel |
PURE MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
SILICON |
||||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
200 mA |
SINGLE |
6 V |
ZENER |
1 |
LONG FORM |
5 % |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
e3 |
SILICON |
|||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
100 mA |
SINGLE |
14 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
2.5 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
e3 |
SILICON |
|||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
50 mA |
SINGLE |
22 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
3.5 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
e3 |
SILICON |
Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.
Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.
Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.
Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.