Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Maximum Voltage Temperature Coefficient | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Knee Impedance | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Fairchild Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
45 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
5 ohm |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e3 |
SILICON |
|||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
25 mA |
SINGLE |
11 V |
ZENER |
5 uA |
1 |
7.6 V |
LONG FORM |
5 % |
700 ohm |
150 Cel |
8 ohm |
-65 Cel |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
1 W |
DO-204AL |
SILICON |
MIL-STD-750 |
||||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
20 mA |
SINGLE |
9.1 V |
ZENER |
1 |
LONG FORM |
5 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
SILICON |
||||||||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
50 mA |
SINGLE |
24 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
3.5 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
e3 |
SILICON |
|||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
3 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2 % |
200 Cel |
95 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
|||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
3.3 V |
ZENER |
5 uA |
1 |
1 V |
LONG FORM |
5 % |
175 Cel |
24 ohm |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||
M/a-com Technology Solutions |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.31 mV/Cel |
6.2 V |
ZENER |
1 |
LONG FORM |
4.84 % |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
17 mA |
SINGLE |
15 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-204AL |
e0 |
SILICON |
||||||||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
17 mA |
SINGLE |
15 V |
ZENER |
1 |
LONG FORM |
5 % |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
National Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
15.5 mA |
SINGLE |
16 V |
ZENER |
5 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
700 ohm |
200 Cel |
16 ohm |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e0 |
SILICON |
||||||||||||||||||||
Frontier Electronics |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
15.5 mA |
SINGLE |
16 V |
ZENER |
5 uA |
1 |
LONG FORM |
5 % |
700 ohm |
175 Cel |
-65 Cel |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
15.5 mA |
SINGLE |
16 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
16 ohm |
-65 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e3 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
15.5 mA |
SINGLE |
16 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
DO-41 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
15.5 mA |
SINGLE |
16 V |
ZENER |
5 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
700 ohm |
200 Cel |
16 ohm |
-65 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e3 |
SILICON |
||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
8.5 mA |
SINGLE |
30 V |
ZENER |
1 |
LONG FORM |
5 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
20 mA |
SINGLE |
9.1 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
10 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-204AH |
e2 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
3.3 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.06 % |
175 Cel |
90 ohm |
TIN SILVER |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||
|
Panjit International |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3.3 V |
ZENER |
1 |
LONGFORM |
Voltage Reference Diodes |
5 % |
175 Cel |
85 ohm |
UNIDIRECTIONAL |
.5 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
4.3 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.98 % |
175 Cel |
90 ohm |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
76 mA |
SINGLE |
3.3 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
1.5 W |
METALLURGICALLY BONDED |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
.25 mA |
SINGLE |
7.8 mV/Cel |
12 V |
ZENER |
.05 uA |
1 |
LONG FORM |
5 % |
200 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500/435F |
||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
5 mA |
SINGLE |
200 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
480 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
e3 |
SILICON |
|||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
7.5 mA |
SINGLE |
.124 mV/Cel |
6.2 V |
ZENER |
2 uA |
1 |
3 V |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
10 ohm |
-55 Cel |
MATTE TIN |
O-LALF-W2 |
ISOLATED |
.5 W |
METALLURGICALLY BONDED |
DO-204AH |
e3 |
SILICON |
MIL-19500 |
|||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
5.3 mV/Cel |
7.45 V |
ZENER |
1 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
15 ohm |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
12 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
HIGH RELIABILITY |
DO-213AC |
e3 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
45 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5.88 % |
175 Cel |
10 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
LOW NOISE |
DO-41 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
-2.04 mV/Cel |
2.4 V |
ZENER |
100 uA |
1 |
1 V |
LONG FORM |
5 % |
175 Cel |
30 ohm |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
150 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
5 W |
e0 |
SILICON |
MIL-19500/356H |
|||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
10 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-GELF-R2 |
UNIDIRECTIONAL |
Qualified |
.5 W |
HIGH RELIABILITY, METALLURGICALLY BONDED |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
14 mA |
SINGLE |
18 V |
ZENER |
1 |
LONG FORM |
5 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
9.5 mA |
SINGLE |
13 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
13 ohm |
Tin (Sn) |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-204AH |
e3 |
SILICON |
|||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
3.7 mV/Cel |
6.2 V |
ZENER |
3 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
10 ohm |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
5.6 V |
ZENER |
.1 uA |
1 |
1 V |
LONG FORM |
5 % |
450 ohm |
175 Cel |
25 ohm |
-55 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
DO-35 |
e3 |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
4.5 mV/Cel |
6.8 V |
ZENER |
2 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
2 % |
200 Cel |
15 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
CECC50005-005 |
||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
15 mA |
SINGLE |
18 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.41 % |
175 Cel |
20 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
LOW NOISE |
DO-41 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||
|
Vishay Telefunken |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
2 % |
TIN SILVER |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
DO-213AA |
e2 |
SILICON |
||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2 % |
175 Cel |
60 ohm |
TIN SILVER |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
DO-213AA |
e2 |
10 |
260 |
SILICON |
|||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
41 mA |
SINGLE |
6.2 V |
ZENER |
10 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
700 ohm |
200 Cel |
2 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e3 |
30 |
260 |
SILICON |
|||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
28 mA |
SINGLE |
9.1 V |
ZENER |
10 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
700 ohm |
200 Cel |
5 ohm |
-65 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e3 |
SILICON |
||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
28 mA |
SINGLE |
9.1 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
5 ohm |
-65 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e3 |
SILICON |
||||||||||||||||||||
National Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
28 mA |
SINGLE |
9.1 V |
ZENER |
10 uA |
1 |
LONG FORM |
5 % |
700 ohm |
200 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
28 mA |
SINGLE |
9.1 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
DO-41 |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||
Frontier Electronics |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
28 mA |
SINGLE |
9.1 V |
ZENER |
10 uA |
1 |
LONG FORM |
5 % |
700 ohm |
175 Cel |
-65 Cel |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
SILICON |
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|
Micro Commercial Components |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
200 mA |
SINGLE |
6 V |
ZENER |
.001 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
300 ohm |
150 Cel |
1 ohm |
MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
DO-15 |
e3 |
10 |
260 |
SILICON |
||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
5.1 V |
ZENER |
.1 uA |
1 |
1 V |
LONG FORM |
5 % |
550 ohm |
175 Cel |
35 ohm |
-55 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
DO-35 |
e3 |
SILICON |
|||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5.88 % |
200 Cel |
35 ohm |
TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-204AH |
e3 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
150 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
5 W |
e0 |
SILICON |
MIL-19500/356H |
|||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
4.7 V |
ZENER |
5 uA |
1 |
1.5 V |
LONG FORM |
5 % |
175 Cel |
15 ohm |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.
Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.
Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.
Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.