Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Maximum Voltage Temperature Coefficient | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Knee Impedance | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
.05 mA |
SINGLE |
7.5 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-204AH |
e0 |
SILICON |
|||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
.05 mA |
SINGLE |
7.5 V |
1.1 V |
ZENER |
10 uA |
1 |
5.7 V |
LONG FORM |
2 % |
175 Cel |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.48 W |
DO-204AH |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||
Microsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
.05 mA |
SINGLE |
7.5 V |
ZENER |
1 |
LONG FORM |
2 % |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-204AH |
e0 |
SILICON |
|||||||||||||||||||||||
|
Panjit International |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
7.5 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-55 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
DO-35 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
NO |
.05 mA |
SINGLE |
7.5 V |
1 |
Voltage Reference Diodes |
5 % |
175 Cel |
Tin (Sn) |
.5 W |
e3 |
|||||||||||||||||||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
9 mA |
SINGLE |
14 V |
ZENER |
1 |
LONG FORM |
5 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
SILICON |
||||||||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
125 mA |
SINGLE |
11 V |
ZENER |
1 |
LONG FORM |
5 % |
150 Cel |
-65 Cel |
PURE MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
30 mA |
SINGLE |
39 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
14 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
e3 |
SILICON |
|||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
0 mV/Cel |
3.3 V |
ZENER |
5 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
95 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
CECC50005-005 |
||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5.2 mA |
SINGLE |
21.12 mV/Cel |
24 V |
ZENER |
.5 uA |
1 |
18 V |
LONG FORM |
5 % |
750 ohm |
175 Cel |
33 ohm |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.4 W |
METALLURGICALLY BONDED |
DO-204AH |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
2 mA |
SINGLE |
29.4 mV/Cel |
30 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
80 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
CECC50005-005 |
||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
10 mA |
SINGLE |
24 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5.79 % |
175 Cel |
25 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
LOW NOISE |
DO-41 |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
8 mA |
SINGLE |
33 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.06 % |
175 Cel |
35 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
LOW NOISE |
DO-41 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
49 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
10 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
5 mA |
SINGLE |
4.7 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.38 % |
175 Cel |
60 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
DO-35 |
e2 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
31 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
10 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
5.6 mA |
SINGLE |
22 V |
ZENER |
1 |
LONG FORM |
1 % |
TIN LEAD |
O-XALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
DO-35 |
e0 |
SILICON |
MIL-19500/533F |
||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
6.5 mA |
SINGLE |
39 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
60 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
DO-41 |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
30 mA |
SINGLE |
43 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
20 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
e3 |
SILICON |
|||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
16 mV/Cel |
18 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
45 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
CECC50005-005 |
||||||||||||||
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
3.9 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
90 ohm |
UNIDIRECTIONAL |
.5 W |
DO-204AH |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
3.9 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
90 ohm |
-65 Cel |
Matte Tin (Sn) - annealed |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||
|
Leshan Radio |
ZENER DIODE |
NO |
5 mA |
SINGLE |
3.9 V |
1 |
Voltage Reference Diodes |
4.9 % |
85 ohm |
.5 W |
|||||||||||||||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
45 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-XALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
1 W |
METALLURGICALLY BONDED |
DO-41 |
e0 |
SILICON |
MIL-19500/115K |
|||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
8 mA |
SINGLE |
32 mV/Cel |
30 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
45 ohm |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
CAPACITANCE IS CAPTURED FROM THE GRAPH |
DO-41 |
e3 |
30 |
260 |
SILICON |
CECC50005-010 |
||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
5 mA |
SINGLE |
36 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5.56 % |
175 Cel |
80 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
DO-35 |
e2 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||
|
Fagor Electronica S Coop |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
5 mA |
SINGLE |
36 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5.56 % |
175 Cel |
80 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
DO-35 |
e2 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||
Synsemi |
ZENER DIODE |
NO |
5 mA |
SINGLE |
36 V |
1 |
Voltage Reference Diodes |
5.5 % |
200 Cel |
80 ohm |
.5 W |
|||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
5 mA |
SINGLE |
4.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2.38 % |
175 Cel |
100 ohm |
TIN |
O-GALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
6 mA |
SINGLE |
43 mV/Cel |
39 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
60 ohm |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
CAPACITANCE IS CAPTURED FROM THE GRAPH |
DO-41 |
e3 |
30 |
260 |
SILICON |
CECC50005-010 |
||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
2 mA |
SINGLE |
29.4 mV/Cel |
30 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
80 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
CECC50005-005 |
||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
3 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
95 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
0 mV/Cel |
3.9 V |
ZENER |
3 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
90 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
CECC50005-005 |
||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
5 mA |
SINGLE |
5.75 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2.61 % |
175 Cel |
40 ohm |
TIN |
O-GALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||
Microchip Technology |
ZENER DIODE |
BOTTOM |
PIN/PEG |
2 |
NO |
ROUND |
METAL |
245 mA |
SINGLE |
51 V |
ZENER |
1 |
FLANGE MOUNT |
5 % |
175 Cel |
-65 Cel |
TIN LEAD |
O-MBFM-P2 |
UNIDIRECTIONAL |
ANODE |
Not Qualified |
50 W |
TO-204AD |
e0 |
SILICON |
|||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
.25 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-35 |
e0 |
SILICON |
||||||||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
53 mA |
SINGLE |
4.7 V |
ZENER |
1 |
LONG FORM |
10 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
|||||||||||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
45 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
10 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
|||||||||||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
17 mA |
SINGLE |
15 V |
ZENER |
1 |
LONG FORM |
10 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
|||||||||||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
15.5 mA |
SINGLE |
16 V |
ZENER |
1 |
LONG FORM |
10 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
|||||||||||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
6.2 mA |
SINGLE |
20 V |
ZENER |
1 |
LONG FORM |
20 % |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
1.7 mA |
SINGLE |
75 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||
Texas Instruments |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
20 mA |
SINGLE |
4.7 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
10 % |
175 Cel |
19 ohm |
O-GALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
16 mV/Cel |
18 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
45 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
CECC50005-005 |
||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
2 mA |
SINGLE |
33.4 mV/Cel |
33 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
80 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
CECC50005-005 |
||||||||||||||
STMicroelectronics |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
6.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.45 % |
175 Cel |
10 ohm |
-55 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
DO-35 |
e0 |
SILICON |
||||||||||||||||||||||
Defense Logistics Agency |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
20 mA |
SINGLE |
10 V |
ZENER |
1 |
LONG FORM |
10 % |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.48 W |
METALLURGICALLY BONDED |
DO-204AH |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
MIL-19500/127 |
|||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
2 mA |
SINGLE |
24.15 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2.28 % |
175 Cel |
70 ohm |
TIN |
O-GALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
e3 |
30 |
260 |
SILICON |
Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.
Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.
Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.
Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.