WRAP AROUND Zener Diodes 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Maximum Voltage Temperature Coefficient Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Knee Impedance Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

BZM55B3V9TR

Vishay Telefunken

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

ZENER

LONG FORM

TIN SILVER

O-LELF-R2

1

ISOLATED

Not Qualified

e2

SILICON

BZM55B5V6TR

Vishay Telefunken

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

ZENER

LONG FORM

TIN SILVER

O-LELF-R2

1

ISOLATED

Not Qualified

e2

SILICON

BZM55B5V6-TR

Vishay Intertechnology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

5.6 V

ZENER

1

LONG FORM

Voltage Reference Diodes

2.14 %

175 Cel

40 ohm

Tin/Silver (Sn/Ag)

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

LOW NOISE

e2

40

260

SILICON

BZM55C2V7-TR

Vishay Intertechnology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

2.7 V

ZENER

1

LONG FORM

Voltage Reference Diodes

7.41 %

175 Cel

85 ohm

Tin/Silver (Sn/Ag)

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

LOW NOISE

e2

40

260

SILICON

BZV55-B16,115

NXP Semiconductors

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

16 V

ZENER

1

LONG FORM

Voltage Reference Diodes

2 %

200 Cel

40 ohm

-65 Cel

Tin (Sn)

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55-B5V1

Vishay Intertechnology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

5.1 V

ZENER

2 uA

1

2 V

LONG FORM

Voltage Reference Diodes

2 %

200 Cel

60 ohm

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

.4 W

SILICON

BZV55-B6V8,115

NXP Semiconductors

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

6.8 V

ZENER

1

LONG FORM

Voltage Reference Diodes

2 %

200 Cel

15 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55-C16T/R

NXP Semiconductors

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

14 mV/Cel

16.2 V

ZENER

.05 uA

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

40 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55-C24,135

NXP Semiconductors

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

22 mV/Cel

24.2 V

ZENER

.05 uA

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

70 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55-C3V6T/R

NXP Semiconductors

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

0 mV/Cel

3.6 V

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

90 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55-C4V3,135

NXP Semiconductors

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

0 mV/Cel

4.3 V

ZENER

3 uA

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

90 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55-C7V5,135

NXP Semiconductors

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

5.3 mV/Cel

7.45 V

ZENER

1 uA

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

15 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55-C7V5T/R

NXP Semiconductors

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

5.3 mV/Cel

7.45 V

ZENER

1 uA

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

15 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55B39L1

Taiwan Semiconductor

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

2.5 mA

SINGLE

39 V

ZENER

1

LONG FORM

2 %

175 Cel

-65 Cel

MATTE TIN OVER NICKEL

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

HIGH RELIABILITY

DO-213AC

e3

SILICON

BZV55B5V1

STMicroelectronics

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

2.55 mV/Cel

5.1 V

ZENER

.1 uA

1

LONG FORM

2 %

550 ohm

175 Cel

-55 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

SILICON

BZV55B5V1L1

Taiwan Semiconductor

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

5.1 V

ZENER

1

LONG FORM

2 %

175 Cel

-65 Cel

MATTE TIN OVER NICKEL

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

HIGH RELIABILITY

DO-213AC

e3

SILICON

BZV55C16/TR

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

16 V

ZENER

.05 uA

1

11.2 V

LONG FORM

5.56 %

175 Cel

40 ohm

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

METALLURGICALLY BONDED

DO-213AA

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZV55C16T&R

Continental Device India

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

14 mV/Cel

16.2 V

ZENER

.05 uA

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

40 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55C16TR

Central Semiconductor

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

16 V

ZENER

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

40 ohm

Tin/Lead (Sn/Pb)

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

e0

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZV55C3V6/TR

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

3.6 V

ZENER

5 uA

1

1 V

LONG FORM

5.56 %

175 Cel

90 ohm

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

METALLURGICALLY BONDED

DO-213AA

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZV55C3V6L1

Taiwan Semiconductor

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

3.6 V

ZENER

1

LONG FORM

5 %

175 Cel

-65 Cel

MATTE TIN OVER NICKEL

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

HIGH RELIABILITY

DO-213AC

e3

SILICON

BZV55C3V6T&R

Continental Device India

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

0 mV/Cel

3.6 V

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

90 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55C3V6TR

Central Semiconductor

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

3.6 V

ZENER

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

90 ohm

Tin/Lead (Sn/Pb)

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

e0

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZV55C7V5/TR

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

7.5 V

ZENER

1 uA

1

5 V

LONG FORM

6.04 %

175 Cel

15 ohm

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

METALLURGICALLY BONDED

DO-213AA

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZV55C7V5L1

Taiwan Semiconductor

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

7.5 V

ZENER

1

LONG FORM

5 %

175 Cel

-65 Cel

MATTE TIN OVER NICKEL

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

HIGH RELIABILITY

DO-213AC

e3

SILICON

BZV55C7V5T&R

Continental Device India

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

5.3 mV/Cel

7.45 V

ZENER

1 uA

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

15 ohm

-65 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.4 W

e3

30

260

SILICON

BZV55C7V5TR

Central Semiconductor

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

7.5 V

ZENER

1

LONG FORM

Voltage Reference Diodes

5 %

200 Cel

15 ohm

Tin/Lead (Sn/Pb)

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.5 W

e0

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZY55C3V3

Taiwan Semiconductor

ZENER DIODE

DUAL

WRAP AROUND

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

3.3 V

ZENER

1

SMALL OUTLINE

5 %

150 Cel

-55 Cel

MATTE TIN OVER NICKEL

R-PDSO-R2

1

UNIDIRECTIONAL

.5 W

e3

SILICON

BZY55C3V3RYG

Taiwan Semiconductor

ZENER DIODE

DUAL

WRAP AROUND

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

3.3 V

ZENER

1

SMALL OUTLINE

2 %

150 Cel

-55 Cel

MATTE TIN

R-PDSO-R2

1

UNIDIRECTIONAL

Not Qualified

.5 W

e3

30

260

SILICON

BZY55C3V9RYG

Taiwan Semiconductor

ZENER DIODE

DUAL

WRAP AROUND

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

3.9 V

ZENER

1

SMALL OUTLINE

2 %

150 Cel

-55 Cel

MATTE TIN

R-PDSO-R2

1

UNIDIRECTIONAL

Not Qualified

.5 W

e3

30

260

SILICON

DL4735A-TP

Micro Commercial Components

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

41 mA

SINGLE

6.2 V

ZENER

.01 uA

1

LONG FORM

Voltage Reference Diodes

5 %

700 ohm

175 Cel

2 ohm

Matte Tin (Sn)

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1 W

HIGH RELIABILITY

e3

10

260

SILICON

DL4748A-TP

Micro Commercial Components

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

11.5 mA

SINGLE

22 V

ZENER

.005 uA

1

LONG FORM

Voltage Reference Diodes

5 %

750 ohm

175 Cel

23 ohm

Matte Tin (Sn)

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

1 W

HIGH RELIABILITY

e3

10

260

SILICON

JANS1N4104UR-1

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

.25 mA

SINGLE

10 V

ZENER

1

LONG FORM

5 %

TIN LEAD

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

DO-213AA

e0

SILICON

MIL-19500/435F

JANS1N4106UR-1

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

.25 mA

SINGLE

12 V

ZENER

1

LONG FORM

5 %

TIN LEAD

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

DO-213AA

e0

SILICON

MIL-19500/435F

JANS1N4109UR-1

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

.25 mA

SINGLE

15 V

ZENER

1

LONG FORM

5 %

TIN LEAD

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

DO-213AA

e0

SILICON

MIL-19500/435F

JANS1N4568AUR-1

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

.064 mV/Cel

6.4 V

ZENER

1

LONG FORM

5 %

TIN LEAD

O-LELF-R2

1

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

DO-213AA

e0

SILICON

MIL-19500/452

JANS1N6632US

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

380 mA

SINGLE

3.3 V

ZENER

1

LONG FORM

5 %

Tin/Lead (Sn/Pb)

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Qualified

5 W

e0

SILICON

MIL-19500/356H

JANTX1N3016DUR-1

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

37 mA

SINGLE

6.8 V

ZENER

1

LONG FORM

1 %

TIN LEAD

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Qualified

1 W

METALLURGICALLY BONDED

DO-213AB

e0

SILICON

MIL-19500/115K

JANTX1N4469US

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

17 mA

SINGLE

15 V

ZENER

1

LONG FORM

5 %

TIN LEAD

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Qualified

1.5 W

METALLURGICALLY BONDED

e0

SILICON

MIL-19500

JANTX1N4482CUS

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

51 V

ZENER

1

LONG FORM

2 %

TIN LEAD

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Qualified

1.5 W

e0

SILICON

MIL-19500/406F

JANTX1N4482DUS

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

51 V

ZENER

1

LONG FORM

1 %

TIN LEAD

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Qualified

1.5 W

e0

SILICON

MIL-19500/406F

JANTX1N4482US

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

51 V

ZENER

1

LONG FORM

5 %

TIN LEAD

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Qualified

1.5 W

METALLURGICALLY BONDED

e0

SILICON

MIL-19500

JANTX1N4574AUR-1

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

ZENER

1

LONG FORM

TIN LEAD

O-LELF-R2

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

DO-213AA

e0

SILICON

MIL-19500/452

JANTX1N4624UR-1

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

.25 mA

SINGLE

.94 mV/Cel

4.7 V

ZENER

10 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

1500 ohm

-65 Cel

TIN LEAD

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Qualified

.5 W

HIGH RELIABILTY

DO-213AA

e0

SILICON

MIL-19500

JANTX1N6636US

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

260 mA

SINGLE

4.7 V

ZENER

1

LONG FORM

5 %

Tin/Lead (Sn/Pb)

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Qualified

5 W

e0

SILICON

MIL-19500/356H

JANTX1N758AUR-1

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

20 mA

SINGLE

10 V

ZENER

1 uA

1

8 V

LONG FORM

5 %

175 Cel

7 ohm

-65 Cel

TIN LEAD

O-LELF-R2

UNIDIRECTIONAL

Qualified

.5 W

METALLURGICALLY BONDED

DO-213AA

e0

SILICON

MIL-19500

JANTXV1N4104UR-1

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

.25 mA

SINGLE

5.5 mV/Cel

10 V

ZENER

1 uA

1

LONG FORM

5 %

200 Cel

-65 Cel

TIN LEAD

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Qualified

.5 W

METALLURGICALLY BONDED

DO-213AA

e0

SILICON

MIL-19500/435F

JANTXV1N4482CUS

Microchip Technology

ZENER DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

5 mA

SINGLE

51 V

ZENER

1

LONG FORM

2 %

TIN LEAD

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Qualified

1.5 W

e0

SILICON

MIL-19500/406F

Zener Diodes

Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.

Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.

Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.

Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.