WRAP AROUND Zener Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Working Test Current	Config	Maximum Voltage Temperature Coefficient	Nominal Reference Voltage	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Voltage Tolerance	Maximum Knee Impedance	Maximum Operating Temperature	Maximum Dynamic Impedance	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Polarity	Case Connection	Qualification	Maximum Power Dissipation	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Reference Standard
JANTXV1N3021BUR-1	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	23 mA	SINGLE		11 V	ZENER		1		LONG FORM		5 %					TIN LEAD	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Qualified	1 W	METALLURGICALLY BONDED	DO-213AB	e0			SILICON	MIL-19500/115K
BZV55-C6V8,135	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	4.5 mV/Cel	6.8 V	ZENER	2 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	15 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
ZMY24-GS08	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	25 mA	SINGLE		24.2 V	ZENER		1		LONG FORM	Voltage Reference Diodes	5.78 %		175 Cel	14 ohm		Tin/Silver (Sn97.5Ag2.5)	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	1 W			e2	30	260	SILICON
BZV55-C6V8T/R	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	4.5 mV/Cel	6.8 V	ZENER	2 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	15 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
BZV55C6V8/TR	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		6.8 V	ZENER	2 uA	1	4 V	LONG FORM		5.88 %		175 Cel	15 ohm	-65 Cel		O-LELF-R2		UNIDIRECTIONAL	ISOLATED			METALLURGICALLY BONDED	DO-213AA		NOT SPECIFIED	NOT SPECIFIED	SILICON
BZV55C6V8T&R	Continental Device India	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	4.5 mV/Cel	6.8 V	ZENER	2 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	15 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
BZV55C6V8TR	Central Semiconductor	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		6.8 V	ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	15 ohm		Tin/Lead (Sn/Pb)	O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W			e0	NOT SPECIFIED	NOT SPECIFIED	SILICON
JANTX1N746AUR-1	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	20 mA	SINGLE		3.3 V	ZENER	5 uA	1	1 V	LONG FORM		5 %		175 Cel	24 ohm	-65 Cel	Tin/Lead (Sn/Pb)	O-LELF-R2		UNIDIRECTIONAL		Qualified	.5 W	METALLURGICALLY BONDED	DO-213AA	e0			SILICON	MIL-19500
JANTX1N823AUR-1	M/a-com Technology Solutions	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS		SINGLE	.31 mV/Cel	6.2 V	ZENER		1		LONG FORM		4.84 %					TIN LEAD	O-LELF-R2			ISOLATED	Not Qualified	.5 W		DO-213AA	e0			SILICON
BZM55C3V3-TR	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		3.3 V	ZENER		1		LONG FORM	Voltage Reference Diodes	6.06 %		175 Cel	90 ohm		TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	LOW NOISE		e2	30	260	SILICON
BZM55-C3V3T/R	Panjit International	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS		SINGLE		3.3 V	ZENER		1		LONGFORM	Voltage Reference Diodes	5 %		175 Cel	85 ohm					UNIDIRECTIONAL			.5 W				NOT SPECIFIED	NOT SPECIFIED	SILICON
BZM55C4V3-TR3	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		4.3 V	ZENER		1		LONG FORM	Voltage Reference Diodes	6.98 %		175 Cel	90 ohm		Tin/Silver (Sn/Ag)	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	LOW NOISE		e2	40	260	SILICON
JAN1N6485US	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	76 mA	SINGLE		3.3 V	ZENER		1		LONG FORM		5 %					TIN LEAD	O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Qualified	1.5 W	METALLURGICALLY BONDED		e0			SILICON	MIL-19500
JANTX1N4106UR-1	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	.25 mA	SINGLE	7.8 mV/Cel	12 V	ZENER	.05 uA	1		LONG FORM		5 %		200 Cel		-65 Cel	TIN LEAD	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-213AA	e0			SILICON	MIL-19500/435F
BZV55-C7V5,115	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	5.3 mV/Cel	7.45 V	ZENER	1 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	15 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
BZV55C12L1	Taiwan Semiconductor	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		12 V	ZENER		1		LONG FORM		5 %		175 Cel		-65 Cel	MATTE TIN OVER NICKEL	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	HIGH RELIABILITY	DO-213AC	e3			SILICON
JAN1N4370AUR-1	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	20 mA	SINGLE	-2.04 mV/Cel	2.4 V	ZENER	100 uA	1	1 V	LONG FORM		5 %		175 Cel	30 ohm	-65 Cel	Tin/Lead (Sn/Pb)	O-LELF-R2		UNIDIRECTIONAL		Qualified	.5 W	METALLURGICALLY BONDED	DO-213AA	e0			SILICON	MIL-19500
JANTXV1N4956US	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	150 mA	SINGLE		8.2 V	ZENER		1		LONG FORM		5 %					TIN LEAD	O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Qualified	5 W			e0			SILICON	MIL-19500/356H
JANTXV1N6324US	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	20 mA	SINGLE		10 V	ZENER		1		LONG FORM		5 %		175 Cel		-65 Cel	Tin/Lead (Sn/Pb)	O-GELF-R2		UNIDIRECTIONAL		Qualified	.5 W	HIGH RELIABILITY, METALLURGICALLY BONDED		e0			SILICON	MIL-19500
BZV55-C6V2,135	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	3.7 mV/Cel	6.2 V	ZENER	3 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	10 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
TZMB5V1GS08	Vishay Telefunken	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		5.1 V	ZENER		1		LONG FORM		2 %					TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	LOW NOISE	DO-213AA	e2			SILICON
TZMB5V1-GS08	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		5.1 V	ZENER		1		LONG FORM	Voltage Reference Diodes	2 %		175 Cel	60 ohm		TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	LOW NOISE	DO-213AA	e2	10	260	SILICON
JANTX1N4956US	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	150 mA	SINGLE		8.2 V	ZENER		1		LONG FORM		5 %					TIN LEAD	O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Qualified	5 W			e0			SILICON	MIL-19500/356H
JANTX1N750AUR-1	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	20 mA	SINGLE		4.7 V	ZENER	5 uA	1	1.5 V	LONG FORM		5 %		175 Cel	15 ohm	-65 Cel	TIN LEAD	O-LELF-R2		UNIDIRECTIONAL		Qualified	.5 W	METALLURGICALLY BONDED	DO-213AA	e0			SILICON	MIL-19500
ZM4742A-GS08	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	21 mA	SINGLE		12 V	ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		175 Cel	9 ohm		Tin/Silver (Sn97.5Ag2.5)	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED		1 W		DO-213AB	e2	30	260	SILICON	AEC-Q101
BZV55-B10,115	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	8 mV/Cel	10 V	ZENER	.2 uA	1		LONG FORM	Voltage Reference Diodes	2 %		200 Cel	20 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
DL4748A	Diodes Incorporated	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	11.5 mA	SINGLE		22 V	ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	23 ohm	-65 Cel	Tin/Lead (Sn/Pb)	O-LELF-R2		UNIDIRECTIONAL	ISOLATED		1 W			e0			SILICON
ZM4738A	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	31 mA	SINGLE		8.2 V	ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		175 Cel	4.5 ohm		TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	1 W		DO-213AB	e2	30	260	SILICON
BZV55-C33,115	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	2 mA	SINGLE	33.4 mV/Cel	33 V	ZENER	.05 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	80 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
BZV55-C8V2,135	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	6.2 mV/Cel	8.2 V	ZENER	.7 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	15 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
TZMB3V3-GS08	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		3.3 V	ZENER		1		LONG FORM	Voltage Reference Diodes	2 %		175 Cel	90 ohm		TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	LOW NOISE	DO-213AA	e2	10	260	SILICON
TZMB3V3GS08	Vishay Telefunken	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		3.3 V	ZENER		1		LONG FORM		2 %					TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	LOW NOISE	DO-213AA	e2			SILICON
BZV55-C47,115	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	2 mA	SINGLE	51.8 mV/Cel	47 V	ZENER	.05 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	170 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
JAN1N4956US	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	150 mA	SINGLE		8.2 V	ZENER		1		LONG FORM		5 %					TIN LEAD	O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Qualified	5 W			e0			SILICON	MIL-19500/356H
BZV55-C18,135	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	16 mV/Cel	17.95 V	ZENER	.05 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	45 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
BZV55-C18T/R	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	16 mV/Cel	17.95 V	ZENER	.05 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	45 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
BZV55C18/TR	Microsemi	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	16 mV/Cel	17.95 V	ZENER	.05 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	45 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
BZV55C18L1	Taiwan Semiconductor	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		18 V	ZENER		1		LONG FORM		5 %		175 Cel		-65 Cel	MATTE TIN OVER NICKEL	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	HIGH RELIABILITY	DO-213AC	e3			SILICON
BZV55C18TR	Central Semiconductor	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		18 V	ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	45 ohm		Tin/Lead (Sn/Pb)	O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W			e0	NOT SPECIFIED	NOT SPECIFIED	SILICON
BZV55C18T&R	Continental Device India	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	16 mV/Cel	17.95 V	ZENER	.05 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	45 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
JAN1N4614UR-1	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	.25 mA	SINGLE	0 mV/Cel	1.8 V	ZENER	7.5 uA	1		LONG FORM	Voltage Reference Diodes	5 %		175 Cel	1200 ohm	-65 Cel	TIN LEAD	O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Qualified	.5 W	HIGH RELIABILTY	DO-213AA	e0			SILICON	MIL-19500
ZM4742A	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	21 mA	SINGLE		12 V	ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		175 Cel	9 ohm		TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	1 W		DO-213AB	e2	30	260	SILICON
BZV55C8V2L1	Taiwan Semiconductor	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		8.2 V	ZENER		1		LONG FORM		5 %		175 Cel		-65 Cel	MATTE TIN OVER NICKEL	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	HIGH RELIABILITY	DO-213AC	e3			SILICON
JAN1N4103UR-1	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	.25 mA	SINGLE	4.55 mV/Cel	9.1 V	ZENER	1 uA	1		LONG FORM		5 %		200 Cel		-65 Cel	TIN LEAD	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-213AA	e0			SILICON	MIL-19500/435F
TZM5252BGS08	Temic Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS		SINGLE	21.12 mV/Cel	24 V	ZENER	.1 uA	1		LONG FORM		5 %	600 ohm	175 Cel				O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W						SILICON
TZM5252B-GS08	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5.2 mA	SINGLE		24 V	ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		175 Cel	33 ohm		TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W		DO-213AA	e2	10	260	SILICON	AEC-Q101
JAN1N6491CUS	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	45 mA	SINGLE		5.6 V	ZENER		1		LONG FORM		2 %					TIN LEAD	O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Qualified	1.5 W			e0			SILICON	MIL-19500/406F
BZM55B13-TR3	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		13 V	ZENER		1		LONG FORM	Voltage Reference Diodes	2 %		175 Cel	26 ohm		Tin/Silver (Sn/Ag)	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	LOW NOISE		e2	40	260	SILICON

Zener Diodes

Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.

Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.

Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.

Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.