Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Maximum Voltage Temperature Coefficient | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Knee Impedance | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
23 mA |
SINGLE |
11 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
1 W |
METALLURGICALLY BONDED |
DO-213AB |
e0 |
SILICON |
MIL-19500/115K |
||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
.25 mA |
SINGLE |
16 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-XALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-35 |
e0 |
SILICON |
MIL-19500/435F |
|||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
-2.04 mV/Cel |
2.4 V |
ZENER |
100 uA |
1 |
1 V |
LONG FORM |
5 % |
175 Cel |
30 ohm |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
2.4 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
TR, 7 INCH; 2000 |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
.85 mA |
SINGLE |
150 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
1500 ohm |
-65 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.48 W |
METALLURGICALLY BONDED |
DO-204AH |
e3 |
SILICON |
|||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
150 mA |
SINGLE |
9.1 V |
ZENER |
1 |
LONG FORM |
5 % |
150 Cel |
-65 Cel |
PURE MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
SILICON |
||||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
65 mA |
SINGLE |
18 V |
ZENER |
.5 uA |
1 |
13.7 V |
LONG FORM |
5 % |
75 ohm |
150 Cel |
2.5 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
DO-201AE |
e3 |
SILICON |
MIL-STD-750 |
|||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
20 V |
ZENER |
1 |
LONG FORM |
6 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
2 mA |
SINGLE |
30 V |
ZENER |
1 |
LONG FORM |
6.67 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
45 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
1 % |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
1.5 W |
HIGH RELIABILITY, METALLURGICALLY BONDED |
DO-41 |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
45 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
1.5 W |
METALLURGICALLY BONDED |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
-2.04 mV/Cel |
2.4 V |
ZENER |
100 uA |
1 |
1 V |
LONG FORM |
5 % |
175 Cel |
30 ohm |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
31 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
1 W |
METALLURGICALLY BONDED |
DO-213AB |
e0 |
SILICON |
MIL-19500/115K |
||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
-2.04 mV/Cel |
2.4 V |
ZENER |
100 uA |
1 |
1 V |
LONG FORM |
5 % |
175 Cel |
30 ohm |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
14 mA |
SINGLE |
18 V |
ZENER |
5 uA |
1 |
13.7 V |
LONG FORM |
5 % |
750 ohm |
175 Cel |
20 ohm |
-65 Cel |
MATTE TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
1 W |
DO-204AL |
e3 |
SILICON |
MIL-STD-750 |
||||||||||||||||||
Microchip Technology |
ZENER DIODE |
UPPER |
SOLDER LUG |
2 |
NO |
RECTANGULAR |
GLASS |
320 mA |
SINGLE |
3.9 V |
ZENER |
1 |
FLANGE MOUNT |
5 % |
TIN LEAD |
R-LUFM-D2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
HIGH RELIABILITY |
e0 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
16.2 V |
ZENER |
1 |
LONG FORM |
5.56 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
.25 mA |
SINGLE |
7.8 mV/Cel |
12 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
200 ohm |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500/435F |
||||||||||||||||
Microchip Technology |
ZENER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
245 mA |
SINGLE |
51 V |
ZENER |
1 |
POST/STUD MOUNT |
5 % |
TIN LEAD |
O-MUPM-D1 |
UNIDIRECTIONAL |
ANODE |
Not Qualified |
50 W |
HIGH RELIABILITY, LOW IMPEDANCE |
DO-203AB |
e0 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
80 mA |
SINGLE |
160 V |
ZENER |
1 |
POST/STUD MOUNT |
10 % |
TIN LEAD |
O-MUPM-D1 |
UNIDIRECTIONAL |
ANODE |
Not Qualified |
50 W |
HIGH RELIABILITY, LOW IMPEDANCE |
DO-203AB |
e0 |
SILICON |
||||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.32 mV/Cel |
6.4 V |
ZENER |
1 |
LONG FORM |
5 % |
MATTE TIN |
O-LALF-W2 |
ISOLATED |
.5 W |
METALLURGICAL BONDED |
DO-35 |
e3 |
SILICON |
MIL-19500/452G |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
150 mA |
SINGLE |
8.2 V |
ZENER |
10 uA |
1 |
6.2 V |
LONG FORM |
5 % |
200 ohm |
150 Cel |
1.5 ohm |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
1.47 W |
e0 |
SILICON |
MIL-STD-750 |
||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
150 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
5 % |
150 Cel |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
e0 |
SILICON |
||||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
150 mA |
SINGLE |
8.2 V |
ZENER |
10 uA |
1 |
6.2 V |
LONG FORM |
5 % |
200 ohm |
150 Cel |
1.5 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
1.47 W |
e3 |
SILICON |
MIL-STD-750 |
|||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
150 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
5 % |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
DO-201AE |
e3 |
SILICON |
||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
150 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
5 % |
150 Cel |
-65 Cel |
PURE MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
7.5 V |
ZENER |
1 |
LONG FORM |
6.04 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
BOTTOM |
PIN/PEG |
2 |
NO |
ROUND |
METAL |
830 mA |
SINGLE |
15 V |
ZENER |
1 |
FLANGE MOUNT |
5 % |
TIN LEAD OVER NICKEL |
O-MBFM-P2 |
UNIDIRECTIONAL |
ANODE |
Qualified |
50 W |
TO-204AD |
e0 |
SILICON |
MIL-19500/114 |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
240 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
5 % |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
5 W |
e0 |
SILICON |
MIL-19500/356H |
|||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
80 mA |
SINGLE |
160 V |
ZENER |
1 |
POST/STUD MOUNT |
5 % |
TIN LEAD |
O-MUPM-D1 |
1 |
UNIDIRECTIONAL |
ANODE |
Qualified |
50 W |
DO-5 |
e0 |
SILICON |
MIL-19500/358E |
|||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
3 mA |
SINGLE |
40.85 mV/Cel |
43 V |
ZENER |
.5 uA |
1 |
33 V |
LONG FORM |
5 % |
1000 ohm |
175 Cel |
93 ohm |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.4 W |
METALLURGICALLY BONDED |
DO-204AH |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||
Microchip Technology |
ZENER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
80 mA |
SINGLE |
160 V |
ZENER |
1 |
POST/STUD MOUNT |
5 % |
TIN LEAD |
O-MUPM-D1 |
1 |
UNIDIRECTIONAL |
ANODE |
Qualified |
50 W |
DO-5 |
e0 |
SILICON |
MIL-19500/358E |
|||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
1.41 mV/Cel |
4.7 V |
1.1 V |
ZENER |
5 uA |
1 |
2 V |
LONG FORM |
5 % |
1900 ohm |
175 Cel |
19 ohm |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
3 mA |
SINGLE |
82 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
200 ohm |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
HIGH RELIABILITY |
DO-213AB |
e0 |
SILICON |
||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
7.5 mA |
SINGLE |
.124 mV/Cel |
6.2 V |
ZENER |
2 uA |
1 |
3 V |
LONG FORM |
5 % |
175 Cel |
10 ohm |
-55 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
.5 W |
METALLURGICALLY BONDED |
DO-204AH |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
.25 mA |
SINGLE |
11.2 mV/Cel |
16 V |
ZENER |
.05 uA |
1 |
LONG FORM |
5 % |
200 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500/435F |
||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
20 mA |
SINGLE |
3.6 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-35 |
e0 |
SILICON |
MIL-19500/127 |
||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
100 mA |
SINGLE |
12 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
5 W |
e0 |
SILICON |
MIL-19500/356H |
|||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
80 mA |
SINGLE |
160 V |
ZENER |
1 |
POST/STUD MOUNT |
5 % |
TIN LEAD |
O-MUPM-D1 |
UNIDIRECTIONAL |
CATHODE |
Not Qualified |
50 W |
LOW IMPEDANCE |
DO-203AB |
e0 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
7.5 mA |
SINGLE |
.62 mV/Cel |
6.2 V |
ZENER |
2 uA |
1 |
3 V |
LONG FORM |
5 % |
175 Cel |
10 ohm |
-55 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
.5 W |
METALLURGICALLY BONDED |
DO-204AH |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.62 mV/Cel |
6.2 V |
ZENER |
1 |
LONG FORM |
4.84 % |
TIN |
O-LALF-W2 |
ISOLATED |
.5 W |
METALLURGICALLY BONDED |
DO-204AA |
e3 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
45 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
1 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
1.5 W |
e0 |
SILICON |
MIL-19500/406F |
|||||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
65 mA |
SINGLE |
18 V |
ZENER |
1 |
LONG FORM |
20 % |
150 Cel |
-65 Cel |
PURE MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
60.5 mA |
SINGLE |
6.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
20 % |
175 Cel |
2 ohm |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.25 W |
METALLURGICALLY BONDED, HIGH RELIABILITY |
DO-213AB |
e0 |
SILICON |
||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
TIN LEAD |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
18.7 mA |
SINGLE |
20 V |
ZENER |
1 uA |
2 |
15.2 V |
LONG FORM |
5 % |
650 ohm |
150 Cel |
14 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
1.19 W |
DO-204AL |
e3 |
SILICON |
MIL-STD-750 |
Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.
Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.
Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.
Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.