NXP Semiconductors Zener Diodes 2,400+
| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Maximum Voltage Temperature Coefficient | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Knee Impedance | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
6.2 mA |
SINGLE |
20 V |
ZENER |
1 |
LONG FORM |
5 % |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
SILICON |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
2 mA |
SINGLE |
.62 mV/Cel |
6.2 V |
ZENER |
1 |
LONG FORM |
200 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
DO-34 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
3.3 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
95 ohm |
Tin (Sn) |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.31 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
COMMON ANODE, 2 ELEMENTS |
2.4 V |
ZENER |
2 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
100 ohm |
-55 Cel |
TIN |
R-PDSO-G3 |
1 |
UNIDIRECTIONAL |
.3 W |
TO-236AB |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
8.2 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
15 ohm |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
TO-236AB |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
0 mV/Cel |
4.7 V |
ZENER |
3 uA |
1 |
SMALL OUTLINE |
2.19 % |
150 Cel |
TIN |
R-PDSO-G3 |
UNIDIRECTIONAL |
Not Qualified |
.3 W |
TO-236 |
e3 |
SILICON |
||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
6.4 mV/Cel |
10 V |
ZENER |
.2 uA |
1 |
SMALL OUTLINE |
2.13 % |
150 Cel |
TIN |
R-PDSO-G3 |
UNIDIRECTIONAL |
Not Qualified |
.3 W |
TO-236 |
e3 |
SILICON |
||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
2 mA |
SINGLE |
27 V |
ZENER |
1 |
LONG FORM |
2 % |
PURE TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
7.4 mV/Cel |
11 V |
ZENER |
.1 uA |
1 |
SMALL OUTLINE |
5.09 % |
150 Cel |
TIN |
R-PDSO-G3 |
UNIDIRECTIONAL |
Not Qualified |
.3 W |
TO-236 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
6.6 mA |
SINGLE |
16.34 mV/Cel |
19 V |
ZENER |
.1 uA |
1 |
LONG FORM |
5 % |
200 Cel |
-65 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
DO-35 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
200 V |
ZENER |
1 |
SMALL OUTLINE |
6 % |
R-PDSO-C2 |
UNIDIRECTIONAL |
Not Qualified |
1.25 W |
DO-214AC |
SILICON |
||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
5 % |
PURE TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
SILICON |
|||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
5 mA |
SINGLE |
7.5 V |
ZENER |
1 |
SMALL OUTLINE |
2 % |
R-CDSO-C2 |
UNIDIRECTIONAL |
Not Qualified |
.4 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
18 V |
ZENER |
1 |
CHIP CARRIER |
Voltage Reference Diodes |
2 % |
150 Cel |
20 ohm |
Tin (Sn) |
R-PBCC-N2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
2 mA |
SINGLE |
33 V |
ZENER |
1 |
LONG FORM |
2 % |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
2 mA |
SINGLE |
68 V |
ZENER |
1 |
SMALL OUTLINE |
2 % |
R-CDSO-C2 |
UNIDIRECTIONAL |
Not Qualified |
.4 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
3.9 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
150 Cel |
-65 Cel |
R-PDSO-F2 |
UNIDIRECTIONAL |
.3 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
IEC-60134 |
||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
11 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
R-PDSO-G3 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
SILICON |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
30 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
150 Cel |
-65 Cel |
R-PDSO-F2 |
UNIDIRECTIONAL |
.31 W |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2.7 mA |
SINGLE |
110 V |
ZENER |
1 |
SMALL OUTLINE |
5.45 % |
R-PDSO-C2 |
UNIDIRECTIONAL |
Not Qualified |
1.5 W |
DO-214AC |
SILICON |
||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
15 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
80 ohm |
-65 Cel |
TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.31 W |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 mA |
SINGLE |
36 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
90 ohm |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
TO-236AB |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
2 mA |
SINGLE |
43 V |
ZENER |
1 |
LONG FORM |
2 % |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
2.2 mA |
SINGLE |
56 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
150 ohm |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
.2 mV/Cel |
4.7 V |
ZENER |
3 uA |
1 |
LONG FORM |
3 % |
200 Cel |
-65 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
DO-35 |
SILICON |
|||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
5 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SEPARATE, 2 ELEMENTS |
14 V |
.9 V |
ZENER |
.1 uA |
2 |
11 V |
SMALL OUTLINE |
Other Diodes |
2.14 % |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G5 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
e3 |
SILICON |
||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
7 mV/Cel |
9.1 V |
ZENER |
.5 uA |
1 |
LONG FORM |
3 % |
200 Cel |
-65 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
DO-35 |
SILICON |
|||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
2 mA |
SINGLE |
62 V |
ZENER |
1 |
LONG FORM |
2 % |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
COMMON ANODE, 2 ELEMENTS |
9.1 V |
ZENER |
2 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
15 ohm |
-55 Cel |
TIN |
R-PDSO-G3 |
1 |
UNIDIRECTIONAL |
.3 W |
TO-236AB |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
9.1 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
10 ohm |
Tin (Sn) |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.55 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
9.4 mV/Cel |
13 V |
ZENER |
.1 uA |
1 |
SMALL OUTLINE |
2.2 % |
150 Cel |
TIN |
R-PDSO-G3 |
UNIDIRECTIONAL |
Not Qualified |
.3 W |
TO-236 |
e3 |
SILICON |
||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
20.4 mV/Cel |
24 V |
ZENER |
.05 uA |
1 |
SMALL OUTLINE |
2 % |
150 Cel |
TIN |
R-PDSO-G2 |
UNIDIRECTIONAL |
Not Qualified |
.4 W |
e3 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
7.5 mA |
SINGLE |
.031 mV/Cel |
6.2 V |
ZENER |
1 |
LONG FORM |
200 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
DO-34 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
16 mV/Cel |
18 V |
ZENER |
.05 uA |
1 |
LONG FORM |
3 % |
200 Cel |
-65 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
DO-35 |
SILICON |
|||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
2 mA |
SINGLE |
26.9 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2.6 % |
175 Cel |
80 ohm |
Tin (Sn) |
O-GALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
0 mV/Cel |
2.7 V |
ZENER |
20 uA |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
3.93 % |
150 Cel |
100 ohm |
TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
37 mA |
SINGLE |
6.8 V |
ZENER |
10 uA |
1 |
LONG FORM |
5 % |
200 Cel |
-65 Cel |
PURE TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
|||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
YES |
2 mA |
SINGLE |
27 V |
1 |
Voltage Reference Diodes |
2 % |
150 Cel |
80 ohm |
.25 W |
||||||||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
20 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
20 ohm |
Tin (Sn) |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.55 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
2.28 mV/Cel |
6 V |
ZENER |
5 uA |
1 |
SMALL OUTLINE |
5 % |
1600 ohm |
R-PDSO-G3 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
TO-236AB |
SILICON |
|||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
CERAMIC, GLASS-SEALED |
2 mA |
SINGLE |
22.1 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2.26 % |
175 Cel |
65 ohm |
TIN |
O-GALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
7.8 mA |
SINGLE |
13.28 mV/Cel |
16 V |
ZENER |
.1 uA |
1 |
LONG FORM |
5 % |
200 Cel |
-65 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
DO-35 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
R-PDSO-G3 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
SILICON |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
1.6 mV/Cel |
5.6 V |
ZENER |
.1 uA |
1 |
LONG FORM |
5 % |
200 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
DO-35 |
SILICON |
||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 mA |
SINGLE |
30 V |
ZENER |
1 |
CHIP CARRIER |
Voltage Reference Diodes |
2 % |
150 Cel |
Tin (Sn) |
R-PBCC-N2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
e3 |
30 |
260 |
SILICON |
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|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
20 V |
ZENER |
1 |
SMALL OUTLINE |
2.18 % |
150 Cel |
TIN |
R-PDSO-G2 |
UNIDIRECTIONAL |
Not Qualified |
.4 W |
e3 |
SILICON |
|||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
13 V |
ZENER |
1 |
SMALL OUTLINE |
2 % |
TIN |
R-PDSO-G3 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
e3 |
SILICON |
||||||||||||||||||||||||||
|
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
COMMON ANODE, 2 ELEMENTS |
3.6 V |
ZENER |
2 |
SMALL OUTLINE |
3.4 % |
R-PDSO-G3 |
UNIDIRECTIONAL |
Not Qualified |
.22 W |
TO-236 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.
Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.
Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.
Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.