Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Maximum Voltage Temperature Coefficient | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Knee Impedance | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
36 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2.5 % |
150 Cel |
300 ohm |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.2 W |
LOW IMPEDANCE |
e3 |
SILICON |
|||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
36 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2.5 % |
150 Cel |
300 ohm |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.2 W |
LOW IMPEDANCE |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.064 mV/Cel |
6.4 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500/452 |
|||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
.25 mA |
SINGLE |
1.53 mV/Cel |
5.1 V |
ZENER |
10 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
1500 ohm |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
HIGH RELIABILTY |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
4.7 V |
.9 V |
ZENER |
3 uA |
1 |
2 V |
SMALL OUTLINE |
6.38 % |
800 ohm |
150 Cel |
80 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
2.7 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5.19 % |
150 Cel |
30 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.225 W |
TO-236AB |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||
|
Micro Commercial Components |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.05 mA |
SINGLE |
3.3 V |
ZENER |
.0075 uA |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
HIGH RELIABILITY |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
-1.881 mV/Cel |
3.3 V |
ZENER |
25 uA |
1 |
1 V |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
1600 ohm |
150 Cel |
28 ohm |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
10 |
260 |
SILICON |
||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
4.592 mV/Cel |
8.2 V |
ZENER |
3 uA |
1 |
6.5 V |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
500 ohm |
150 Cel |
8 ohm |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
SILICON |
||||||||||||||||||
|
Nte Electronics |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
220 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
O-XALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10.5 mA |
SINGLE |
24 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
25 ohm |
MATTE TIN |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1 W |
LOW IMPEDANCE |
DO-214AC |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
100 mA |
SINGLE |
4.7 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.38 % |
175 Cel |
7 ohm |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
1 mA |
SINGLE |
.064 mV/Cel |
6.4 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
100 ohm |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
NO |
31 mA |
SINGLE |
8.2 V |
1 |
Voltage Reference Diodes |
5 % |
200 Cel |
4.5 ohm |
TIN |
1 |
1 W |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
9.5 mA |
SINGLE |
27 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
35 ohm |
Matte Tin (Sn) - annealed |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||
National Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
9.5 mA |
SINGLE |
27 V |
ZENER |
5 uA |
1 |
LONG FORM |
5 % |
750 ohm |
200 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
SILICON |
||||||||||||||||||||||||
|
Fairchild Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
9.5 mA |
SINGLE |
27 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
35 ohm |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-41 |
e3 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
4.7 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
65 mA |
SINGLE |
18 V |
ZENER |
.5 uA |
1 |
13.7 V |
LONG FORM |
5 % |
75 ohm |
150 Cel |
2.5 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
1.47 W |
e3 |
SILICON |
MIL-STD-750 |
|||||||||||||||||||
|
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
65 mA |
SINGLE |
18 V |
ZENER |
1 |
LONG FORM |
5 % |
150 Cel |
-65 Cel |
PURE MATTE TIN |
O-PALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
5 W |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
5 mA |
SINGLE |
180 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
430 ohm |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
5 W |
e3 |
SILICON |
|||||||||||||||||||||
Motorola |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
25 mA |
SINGLE |
15 V |
ZENER |
1 uA |
1 |
SMALL OUTLINE |
5 % |
600 ohm |
150 Cel |
-65 Cel |
TIN LEAD |
R-PDSO-C2 |
UNIDIRECTIONAL |
Not Qualified |
.83 W |
e0 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
SINGLE |
8.2 V |
ZENER |
1 |
SMALL OUTLINE |
6.1 % |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
.8 W |
DO-219AB |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
120 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5.39 % |
150 Cel |
250 ohm |
MATTE TIN |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1.25 W |
HIGH RELIABILITY |
DO-214AC |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||
|
Vishay Telefunken |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
ZENER |
SMALL OUTLINE |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
DO-214 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
156 mV/Cel |
120 V |
ZENER |
1 uA |
1 |
SMALL OUTLINE |
5.39 % |
175 Cel |
-65 Cel |
R-PDSO-C2 |
UNIDIRECTIONAL |
Not Qualified |
1.25 W |
LOW LEAKAGE CURRENT |
DO-214AC |
SILICON |
|||||||||||||||||||||||
Philips Semiconductors |
ZENER DIODE |
YES |
5 mA |
SINGLE |
120 V |
1 |
Voltage Reference Diodes |
5.4 % |
175 Cel |
250 ohm |
Tin/Lead (Sn/Pb) |
3 W |
e0 |
|||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
25 mA |
SINGLE |
18 V |
ZENER |
1 |
SMALL OUTLINE |
6.41 % |
150 Cel |
-65 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
1.25 W |
HIGH RELIABILITY |
DO-214AC |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
75 V |
ZENER |
1 |
SMALL OUTLINE |
6.04 % |
150 Cel |
-65 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
1.25 W |
HIGH RELIABILITY |
DO-214AC |
e3 |
10 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
8 mA |
SINGLE |
30 V |
ZENER |
1 |
SMALL OUTLINE |
6.67 % |
150 Cel |
-65 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
1.25 W |
HIGH RELIABILITY |
DO-214AC |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Vishay Telefunken |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
ZENER |
LONG FORM |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
e2 |
SILICON |
|||||||||||||||||||||||||||||||
|
Panjit International |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
13 V |
ZENER |
1 |
LONGFORM |
Voltage Reference Diodes |
2 % |
175 Cel |
26 ohm |
UNIDIRECTIONAL |
.5 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
13 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2 % |
175 Cel |
26 ohm |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
2.5 mA |
SINGLE |
39 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5.13 % |
175 Cel |
90 ohm |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
3.3 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.06 % |
175 Cel |
90 ohm |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||
Vishay Intertechnology |
ZENER DIODE |
YES |
5 mA |
SINGLE |
6.2 V |
1 |
Voltage Reference Diodes |
2 % |
200 Cel |
10 ohm |
.5 W |
|||||||||||||||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
6.2 V |
ZENER |
1 |
LONG FORM |
2 % |
175 Cel |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
HIGH SURGE CAPABILITY |
e0 |
SILICON |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
YES |
5 mA |
SINGLE |
8.2 V |
ZENER |
1 |
Voltage Reference Diodes |
5 % |
175 Cel |
7 ohm |
MATTE TIN OVER NICKEL |
1 |
.5 W |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
15 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
200 ohm |
-65 Cel |
Tin (Sn) |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.3 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
6.8 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
80 ohm |
-65 Cel |
TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.3 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
2 mA |
SINGLE |
25.3 mV/Cel |
27 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
80 ohm |
-65 Cel |
TIN |
O-LALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e3 |
30 |
260 |
SILICON |
CECC50005-005 |
||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
16 mV/Cel |
18 V |
ZENER |
.05 uA |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
45 ohm |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
TO-236AB |
e3 |
30 |
260 |
SILICON |
||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
60 ohm |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
TO-236AB |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||
|
ROHM |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
12.6 mV/Cel |
15 V |
ZENER |
.1 uA |
1 |
10 V |
SMALL OUTLINE |
2 % |
150 Cel |
30 ohm |
TIN |
R-PDSO-G3 |
UNIDIRECTIONAL |
.25 W |
HIGH RELIABILITY |
e3 |
SILICON |
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|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
60 ohm |
MATTE TIN |
R-PDSO-G3 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.3 W |
e3 |
10 |
260 |
SILICON |
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|
ROHM |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
24 V |
ZENER |
1 |
SMALL OUTLINE |
5.79 % |
150 Cel |
R-PDSO-G3 |
UNIDIRECTIONAL |
.25 W |
HIGH RELIABILITY |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 mA |
SINGLE |
68 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5.8 % |
150 Cel |
240 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.25 W |
TO-236AB |
e3 |
30 |
260 |
SILICON |
UL RECOGNIZED |
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Fagor Electronica S Coop |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
20 mA |
SINGLE |
7.8 mV/Cel |
12 V |
ZENER |
1 uA |
1 |
LONG FORM |
O-PALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
FORMED LEAD OPTIONS ARE AVAILABLE |
SILICON |
Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.
Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.
Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.
Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.