Part | RoHS | Manufacturer | Interface IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Maximum Supply Voltage | Maximum Output Current | No. of Functions | No. of Channels | Technology | Screening Level | Built-in Protections | Maximum Supply Current | Input Characteristics | Nominal Supply Voltage | Maximum Supply Voltage-1 | Turn-on Time | Power Supplies (V) | Nominal Negative Supply Voltage | Package Style (Meter) | Package Equivalence Code | Minimum Supply Voltage-1 | Sub-Category | Minimum Supply Voltage | Terminal Pitch | Maximum Operating Temperature | Nominal Supply Voltage-1 | Output Characteristics | Minimum Operating Temperature | Driver No. of Bits | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Nominal Output Peak Current Limit | Width | Turn-off Time | Qualification | Output Polarity | High Side Driver | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Current Flow Direction | Length |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
NAND GATE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
4 |
CMOS |
8 mA |
STANDARD |
18 V |
.15 us |
SMALL OUTLINE |
SOP16,.4 |
4.5 V |
4.5 V |
1.27 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
2.616 mm |
1.2 A |
7.59 mm |
.15 us |
Not Qualified |
TRUE |
NO |
e3 |
40 |
260 |
10.33 mm |
|||||||||||||||
|
Texas Instruments |
AND GATE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
5 A |
1 |
1 |
AEC-Q100 |
5 V |
30 V |
.11 us |
SMALL OUTLINE |
15 V |
3 V |
1.27 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
7.5 mm |
.11 us |
NO |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED IGBT DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
24 V |
1 |
AEC-Q100 |
6 mA |
GATED |
15 V |
5 V |
.09 us |
-8 V |
SMALL OUTLINE |
SOP16,.4 |
3.3 V |
1.27 mm |
125 Cel |
-40 Cel |
NICKEL GOLD PALLADIUM |
DUAL |
R-PDSO-G16 |
1 |
2.65 mm |
7.8 A |
7.5 mm |
.09 us |
NO |
UNDERVOLTAGE LOCKOUT |
30 |
260 |
10.3 mm |
||||||||||||||||
|
Microchip Technology |
AND GATE BASED MOSFET DRIVER |
COMMERCIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
4 |
CMOS |
TS 16949 |
8 mA |
STANDARD |
18 V |
.15 us |
4.5/18 |
SMALL OUTLINE |
SOP16,.4 |
4.5 V |
MOSFET Drivers |
4.5 V |
1.27 mm |
70 Cel |
TOTEM-POLE |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
1 |
2.64 mm |
1.2 A |
7.495 mm |
.15 us |
Not Qualified |
TRUE |
YES |
e3 |
260 |
10.295 mm |
||||||||||||
|
Analog Devices |
HALF BRIDGE BASED MOSFET DRIVER |
COMMERCIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 V |
1 |
SMALL OUTLINE |
5 V |
1.27 mm |
70 Cel |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
1 |
2.642 mm |
7.49 mm |
.55 us |
Not Qualified |
YES |
e3 |
30 |
260 |
10.2995 mm |
||||||||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
6 A |
1 |
2 |
2 mA |
3.3 V |
18 V |
.04 us |
SMALL OUTLINE |
SOP16,.4 |
6 V |
3 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
4 A |
7.5 mm |
.04 us |
YES |
e4 |
30 |
260 |
10.3 mm |
|||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
6 A |
1 |
2 |
TRANSIENT; UNDER VOLTAGE |
3.3 V |
18 V |
.04 us |
SMALL OUTLINE |
9.2 V |
3 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
2 |
1.75 mm |
3.9 mm |
.04 us |
YES |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
SOURCE AND SINK |
9.9 mm |
||||||||||||||||
|
Texas Instruments |
AND GATE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
5 A |
1 |
1 |
4.5 mA |
5 V |
30 V |
.11 us |
SMALL OUTLINE |
15 V |
2.25 V |
1.27 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
7.5 mm |
.11 us |
TRUE |
NO |
ALSO REQUIRED VEE2 SUPPLY -15V TO 0V |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||
|
Texas Instruments |
AND GATE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
2.5 A |
1 |
5 V |
5 |
SMALL OUTLINE |
SOP16,.4 |
MOSFET Drivers |
1.27 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
2.5 A |
7.5 mm |
Not Qualified |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||||||||
|
Infineon Technologies |
HALF BRIDGE BASED IGBT DRIVER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
20 V |
.195 us |
-8 V |
SMALL OUTLINE |
13 V |
4.5 V |
1.27 mm |
105 Cel |
15 V |
-40 Cel |
TIN |
DUAL |
R-PDSO-G16 |
3 |
2.64 mm |
2 A |
7.52 mm |
.19 us |
YES |
e3 |
10.34 mm |
||||||||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED IGBT DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
10 A |
1 |
1 |
AEC-Q100 |
3.3 V |
33 V |
.13 us |
SMALL OUTLINE |
13 V |
3 V |
1.27 mm |
125 Cel |
15 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
3 |
2.65 mm |
10 A |
7.5 mm |
.13 us |
YES |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||
|
Texas Instruments |
AND GATE BASED MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
6 A |
1 |
2 |
3.3 V |
25 V |
.03 us |
SMALL OUTLINE |
9.2 V |
3 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
6 A |
7.5 mm |
.03 us |
COMPLEMENTARY |
YES |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||
|
Silicon Labs |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
2 |
UNDER VOLTAGE |
5 V |
24 V |
.045 us |
3/5,12/15 |
SMALL OUTLINE |
SOP16,.4 |
6.5 V |
Peripheral Drivers |
4.5 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
DUAL |
R-PDSO-G16 |
2.65 mm |
.5 A |
7.5 mm |
.045 us |
Not Qualified |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
SOURCE AND SINK |
10.3 mm |
|||||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
10 A |
1 |
1 |
AEC-Q100 |
3.3 V |
33 V |
.13 us |
SMALL OUTLINE |
SOP16,.4 |
13 V |
3 V |
1.27 mm |
125 Cel |
15 V |
PUSH-PULL |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
3 |
2.65 mm |
10 A |
7.5 mm |
.13 us |
TRUE AND INVERTED |
YES |
e4 |
260 |
10.3 mm |
|||||||||||||||
|
Infineon Technologies |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
1 |
CMOS |
15 V |
518 V |
.2 us |
15 |
SMALL OUTLINE |
SOP16,.4 |
7 V |
MOSFET Drivers |
0 V |
1.27 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
2.65 mm |
3.3 A |
7.5 mm |
.25 us |
Not Qualified |
YES |
FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT |
e3 |
30 |
260 |
10.3 mm |
||||||||||||||
Analog Devices |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 V |
1 |
SMALL OUTLINE |
5 V |
1.27 mm |
85 Cel |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
1 |
2.642 mm |
7.49 mm |
.55 us |
Not Qualified |
YES |
e0 |
10.2995 mm |
|||||||||||||||||||||||||||
|
Renesas Electronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
75 V |
1 |
48 V |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
10 V |
.8 mm |
105 Cel |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-N16 |
3 |
1 mm |
2 A |
5 mm |
.3 us |
Not Qualified |
YES |
e3 |
30 |
260 |
5 mm |
||||||||||||||||||||||
|
Texas Instruments |
AND GATE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
5 A |
1 |
1 |
4.5 mA |
5 V |
30 V |
.11 us |
3.3/5 |
SMALL OUTLINE |
SOP16,.4 |
15 V |
Peripheral Drivers |
3 V |
1.27 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
5 A |
7.5 mm |
.11 us |
Not Qualified |
TRUE |
NO |
ALSO REQUIRED VEE2 SUPPLY -15V TO 0V |
e4 |
30 |
260 |
10.3 mm |
|||||||||||
|
Texas Instruments |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
6 A |
1 |
2 |
AEC-Q100 |
UNDER VOLTAGE |
3.3 V |
18 V |
.04 us |
SMALL OUTLINE |
9.2 V |
3 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
3 |
1.75 mm |
3.9 mm |
.04 us |
YES |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
SOURCE AND SINK |
9.9 mm |
|||||||||||||||
|
Broadcom |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
.22 us |
SMALL OUTLINE |
4.5 V |
1.27 mm |
105 Cel |
-40 Cel |
TIN |
DUAL |
R-PDSO-G16 |
1 |
3.632 mm |
7.493 mm |
.25 us |
NO |
e3 |
260 |
10.312 mm |
||||||||||||||||||||||||
|
Silicon Labs |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
2 |
UNDER VOLTAGE |
5 V |
24 V |
.045 us |
3/5,12/15 |
SMALL OUTLINE |
SOP16,.25 |
6.5 V |
Peripheral Drivers |
4.5 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
DUAL |
R-PDSO-G16 |
2A |
1.75 mm |
.5 A |
3.9 mm |
.045 us |
Not Qualified |
YES |
40 |
260 |
SOURCE AND SINK |
9.9 mm |
||||||||||||||||
Texas Instruments |
BUFFER OR INVERTER BASED IGBT DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
AEC-Q100 |
3.3 V |
33 V |
.13 us |
SMALL OUTLINE |
13 V |
3 V |
1.27 mm |
125 Cel |
15 V |
-40 Cel |
DUAL |
R-PDSO-G16 |
2.65 mm |
10 A |
7.5 mm |
.13 us |
YES |
10.3 mm |
||||||||||||||||||||||||
|
Microchip Technology |
AND GATE BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
4 |
CMOS |
TS 16949 |
8 mA |
STANDARD |
18 V |
.15 us |
4.5/18 |
SMALL OUTLINE |
SOP16,.4 |
4.5 V |
MOSFET Drivers |
4.5 V |
1.27 mm |
125 Cel |
TOTEM-POLE |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
2.64 mm |
1.2 A |
7.49 mm |
.15 us |
Not Qualified |
TRUE |
YES |
e3 |
10.3 mm |
||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
6 A |
1 |
2 |
3.3 V |
25 V |
.03 us |
SMALL OUTLINE |
6.5 V |
3 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
7.5 mm |
.03 us |
YES |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
6 A |
1 |
2 |
3.3 V |
25 V |
.03 us |
SMALL OUTLINE |
9.2 V |
3 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
7.5 mm |
.03 us |
YES |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||||
|
Texas Instruments |
AND GATE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
5 A |
1 |
1 |
AEC-Q100 |
4.5 mA |
5 V |
30 V |
.11 us |
SMALL OUTLINE |
15 V |
3 V |
1.27 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
7.5 mm |
.11 us |
TRUE |
NO |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||
|
Analog Devices |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
HTSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
150 V |
1 |
CMOS |
AEC-Q100 |
10 V |
.07 us |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
TSSOP16,.19,20 |
3.5 V |
.5 mm |
150 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G16 |
1 |
1.1 mm |
3 mm |
.07 us |
YES |
e3 |
260 |
4.039 mm |
|||||||||||||||||||||
|
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 V |
1 |
CMOS |
15 V |
1220 V |
15 |
SMALL OUTLINE |
SOP16,.4 |
7 V |
MOSFET Drivers |
12 V |
1.27 mm |
TIN |
DUAL |
R-PDSO-G16 |
3 |
2.65 mm |
2.5 A |
7.5 mm |
Not Qualified |
YES |
e3 |
30 |
260 |
10.3 mm |
||||||||||||||||||||
|
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
3.5 V |
1 |
3.3 V |
20 V |
.044 us |
SMALL OUTLINE |
4.5 V |
3 V |
1.27 mm |
85 Cel |
12 V |
-40 Cel |
DUAL |
R-PDSO-G16 |
3 |
2.65 mm |
7.5 mm |
.044 us |
YES |
10.3 mm |
||||||||||||||||||||||||
|
Silicon Labs |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
2 |
UNDER VOLTAGE |
5 V |
24 V |
.045 us |
3/5,12/15 |
SMALL OUTLINE |
SOP16,.4 |
6.5 V |
Peripheral Drivers |
4.5 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
DUAL |
R-PDSO-G16 |
2.65 mm |
4 A |
7.5 mm |
.045 us |
Not Qualified |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
SOURCE AND SINK |
10.3 mm |
|||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
24 V |
.09 us |
SMALL OUTLINE |
1.27 mm |
125 Cel |
15 V |
-40 Cel |
NICKEL GOLD PALLADIUM |
DUAL |
R-PDSO-G16 |
1 |
2.65 mm |
7.5 mm |
.09 us |
NO |
30 |
260 |
10.3 mm |
|||||||||||||||||||||||
|
Onsemi |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
.5 us |
SMALL OUTLINE |
3 V |
1.27 mm |
100 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G16 |
1 |
3.911 mm |
7.493 mm |
.5 us |
YES |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
10.312 mm |
|||||||||||||||||||||||
|
Analog Devices |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6 V |
1 |
BIPOLAR |
14.5 mA |
5 V |
30 V |
.1 us |
SMALL OUTLINE |
SOP16,.4 |
12 V |
2.5 V |
1.27 mm |
125 Cel |
15 V |
OPEN-DRAIN |
-40 Cel |
DUAL |
R-PDSO-G16 |
2.65 mm |
4.61 A |
7.5 mm |
.1 us |
YES |
10.3 mm |
|||||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
6 A |
1 |
2 |
AEC-Q100 |
UNDER VOLTAGE |
3.3 V |
18 V |
.04 us |
SMALL OUTLINE |
9.2 V |
3 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
3 |
1.75 mm |
3.9 mm |
.04 us |
YES |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
SOURCE AND SINK |
9.9 mm |
|||||||||||||||
|
Microchip Technology |
FULL BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
16 |
HVQCCN |
SQUARE |
UNSPECIFIED |
YES |
16 V |
1 |
12 V |
.075 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
5.25 V |
.65 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N16 |
.9 mm |
1 A |
4 mm |
.075 us |
YES |
e4 |
4 mm |
|||||||||||||||||||||||||
|
Analog Devices |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
HTSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
150 V |
1 |
CMOS |
10 V |
.07 us |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
TSSOP16,.19,20 |
3.5 V |
.5 mm |
150 Cel |
-55 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G16 |
1 |
1.1 mm |
3 mm |
.07 us |
YES |
e3 |
30 |
260 |
4.039 mm |
|||||||||||||||||||||
|
Silicon Labs |
BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
2 |
3 V |
24 V |
.045 us |
SMALL OUTLINE |
SOP16,.25 |
6.5 V |
2.7 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2A |
1.75 mm |
4 A |
3.9 mm |
.045 us |
YES |
e4 |
40 |
260 |
9.9 mm |
|||||||||||||||||||
|
Microchip Technology |
FULL BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
1 |
.5 mA |
STANDARD |
12 V |
16 V |
.095 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC16,.16SQ,25 |
5.25 V |
5.25 V |
.65 mm |
125 Cel |
12 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQCC-N16 |
.9 mm |
1 A |
4 mm |
.095 us |
TRUE |
YES |
e4 |
4 mm |
||||||||||||||||||
|
Analog Devices |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6 V |
1 |
BIPOLAR |
14.5 mA |
5 V |
30 V |
.1 us |
SMALL OUTLINE |
SOP16,.4 |
12 V |
2.5 V |
1.27 mm |
125 Cel |
15 V |
OPEN-DRAIN |
-40 Cel |
DUAL |
R-PDSO-G16 |
2.65 mm |
4.61 A |
7.5 mm |
.1 us |
YES |
10.3 mm |
|||||||||||||||||||||
|
Microchip Technology |
AND GATE BASED MOSFET DRIVER |
COMMERCIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
4 |
CMOS |
TS 16949 |
8 mA |
STANDARD |
18 V |
.15 us |
4.5/18 |
SMALL OUTLINE |
SOP16,.4 |
4.5 V |
MOSFET Drivers |
4.5 V |
1.27 mm |
70 Cel |
TOTEM-POLE |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
1 |
2.64 mm |
1.2 A |
7.495 mm |
.15 us |
Not Qualified |
TRUE |
YES |
e3 |
260 |
10.295 mm |
||||||||||||
|
Analog Devices |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
HTSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
135 V |
1 |
CMOS |
10 V |
.07 us |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
TSSOP16,.19,20 |
3.5 V |
.5 mm |
150 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G16 |
1 |
1.1 mm |
3 mm |
.07 us |
YES |
e3 |
30 |
260 |
4.039 mm |
|||||||||||||||||||||
|
Microchip Technology |
FULL BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
1 |
.5 mA |
STANDARD |
12 V |
16 V |
.095 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC16,.16SQ,25 |
5.25 V |
5.25 V |
.65 mm |
125 Cel |
12 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQCC-N16 |
.9 mm |
1 A |
4 mm |
.095 us |
TRUE |
YES |
e4 |
4 mm |
||||||||||||||||||
|
Onsemi |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
22 V |
1 |
AEC-Q100 |
2 mA |
15 V |
.23 us |
SMALL OUTLINE |
SOP16,.25 |
7.3 V |
1.27 mm |
125 Cel |
-40 Cel |
NICKEL GOLD PALLADIUM |
DUAL |
R-PDSO-G16 |
1 |
1.75 mm |
3.3 A |
3.9 mm |
.09 us |
COMPLEMENTARY |
YES |
30 |
260 |
9.9 mm |
|||||||||||||||||||
|
Texas Instruments |
AND GATE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
5 A |
1 |
1 |
AEC-Q100 |
4.5 mA |
5 V |
30 V |
.11 us |
SMALL OUTLINE |
15 V |
3 V |
1.27 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
7.5 mm |
.11 us |
TRUE |
NO |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
6 A |
1 |
2 |
3.3 V |
18 V |
.04 us |
SMALL OUTLINE |
6 V |
3 V |
1.27 mm |
125 Cel |
12 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
2 |
1.75 mm |
3.9 mm |
.04 us |
YES |
e4 |
30 |
260 |
9.9 mm |
||||||||||||||||||
|
Onsemi |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
.5 us |
SMALL OUTLINE |
3 V |
1.27 mm |
100 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G16 |
1 |
3.911 mm |
7.493 mm |
.5 us |
YES |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
10.312 mm |
|||||||||||||||||||||||
|
Renesas Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
1 |
12 V |
150 us |
SMALL OUTLINE |
8.5 V |
1.27 mm |
125 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
1.75 mm |
1 A |
3.9 mm |
100 us |
YES |
e3 |
30 |
260 |
9.9 mm |
||||||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
AUTOMOTIVE |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
6 A |
1 |
2 |
3.3 V |
25 V |
.03 us |
SMALL OUTLINE |
14.7 V |
3 V |
1.27 mm |
125 Cel |
15 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
7.5 mm |
.03 us |
YES |
e4 |
30 |
260 |
10.3 mm |
MOSFET gate drivers are electronic components that are used to control and drive the operation of MOSFETs, which are commonly used as switches in electronic circuits. MOSFETs require a voltage applied to the gate terminal to turn them on or off, and MOSFET gate drivers provide this voltage.
MOSFET gate drivers can be classified into several types based on their specific applications and characteristics. Some of the most common types of MOSFET gate drivers include single-channel drivers, half-bridge drivers, and full-bridge drivers.
Single-channel drivers are used to control a single MOSFET, while half-bridge and full-bridge drivers are used to control multiple MOSFETs in various configurations. MOSFET gate drivers typically include a level shifter, a buffer, and a gate driver circuit.
MOSFET gate drivers are critical components of electronic circuits, providing a way to control and drive the operation of MOSFETs. They are used in a wide range of applications, including motor control, power supplies, and inverters.