Part | RoHS | Manufacturer | Interface IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Maximum Supply Voltage | Maximum Output Current | No. of Functions | No. of Channels | Technology | Screening Level | Built-in Protections | Maximum Supply Current | Input Characteristics | Nominal Supply Voltage | Maximum Supply Voltage-1 | Turn-on Time | Power Supplies (V) | Nominal Negative Supply Voltage | Package Style (Meter) | Package Equivalence Code | Minimum Supply Voltage-1 | Sub-Category | Minimum Supply Voltage | Terminal Pitch | Maximum Operating Temperature | Nominal Supply Voltage-1 | Output Characteristics | Minimum Operating Temperature | Driver No. of Bits | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Nominal Output Peak Current Limit | Width | Turn-off Time | Qualification | Output Polarity | High Side Driver | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Current Flow Direction | Length |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
4 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
9 V |
1 |
.3 mA |
STANDARD |
3.3 V |
9 V |
4200 us |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TO-253 |
2.7 V |
2.7 V |
1.92 mm |
85 Cel |
3.3 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G4 |
1 |
1.22 mm |
1.3 mm |
60 us |
Not Qualified |
TRUE |
YES |
e4 |
260 |
2.9 mm |
||||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
14 |
HTSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
4 A |
2 |
2 |
200 mA |
STANDARD |
12 V |
.035 us |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
TSSOP14,.25 |
MOSFET Drivers |
4.5 V |
.65 mm |
105 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G14 |
2 |
1.2 mm |
4 A |
4.4 mm |
.035 us |
Not Qualified |
NO |
e4 |
30 |
260 |
5 mm |
||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
14 |
HTSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
4 A |
2 |
2 |
200 mA |
STANDARD |
12 V |
.035 us |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
TSSOP14,.25 |
MOSFET Drivers |
4.5 V |
.65 mm |
105 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G14 |
2 |
1.2 mm |
4 A |
4.4 mm |
.035 us |
Not Qualified |
NO |
e4 |
30 |
260 |
5 mm |
||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 V |
1 |
CMOS |
.1 us |
SMALL OUTLINE |
4.5 V |
1.27 mm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
3 A |
3.9 mm |
.11 us |
Not Qualified |
YES |
e3 |
40 |
260 |
4.9 mm |
|||||||||||||||||||||
Renesas Electronics |
FULL BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
THROUGH-HOLE |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
15 V |
1 |
MOS |
12 V |
.14 us |
IN-LINE |
9.5 V |
2.54 mm |
85 Cel |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T20 |
5.33 mm |
1.4 A |
7.62 mm |
.11 us |
Not Qualified |
YES |
e0 |
25.895 mm |
||||||||||||||||||||||||
|
Renesas Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
2 |
3.6 V |
13.2 V |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
5 V |
2.7 V |
.65 mm |
85 Cel |
12 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
1 |
1.2 mm |
3.5 A |
3 mm |
NO |
e3 |
30 |
260 |
4.4 mm |
|||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
1 |
BCDMOS |
1.5 mA |
STANDARD |
18 V |
.16 us |
SMALL OUTLINE |
SOP8,.25 |
4.5 V |
4.5 V |
1.27 mm |
85 Cel |
TOTEM-POLE |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
1 |
1.73 mm |
6 A |
3.94 mm |
.16 us |
Not Qualified |
TRUE |
NO |
e4 |
30 |
260 |
4.93 mm |
||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
2 |
BCDMOS |
TS 16949 |
8 mA |
STANDARD |
18 V |
.1 us |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP8,.19 |
4.5 V |
4.5 V |
.65 mm |
85 Cel |
TOTEM-POLE |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
2 |
1.1 mm |
1.5 A |
3 mm |
.08 us |
Not Qualified |
INVERTED |
YES |
e4 |
260 |
3 mm |
||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
.04 us |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.08,20 |
4.5 V |
.5 mm |
100 Cel |
3-STATE |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
1 |
1 mm |
2 mm |
.03 us |
YES |
e3 |
30 |
260 |
2 mm |
|||||||||||||||||||||
|
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
17.5 V |
1 |
15 V |
.8 us |
SMALL OUTLINE |
13 V |
1.27 mm |
95 Cel |
-40 Cel |
NICKEL GOLD PALLADIUM SILVER |
DUAL |
R-PDSO-G28 |
3 |
2.65 mm |
7.5 mm |
.76 us |
YES |
17.9 mm |
||||||||||||||||||||||||||
|
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
17.5 V |
1 |
CMOS |
15 V |
.8 us |
15 |
SMALL OUTLINE |
SOP28,.4 |
Peripheral Drivers |
13 V |
1.27 mm |
95 Cel |
-40 Cel |
NICKEL GOLD PALLADIUM SILVER |
DUAL |
R-PDSO-G28 |
3 |
2.65 mm |
7.5 mm |
.76 us |
Not Qualified |
YES |
17.9 mm |
|||||||||||||||||||||
|
Analog Devices |
AND GATE BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
13.2 V |
1 |
12 V |
.07 us |
12 |
SMALL OUTLINE |
SOLCC8,.12,20 |
MOSFET Drivers |
4.15 V |
.5 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
3 |
.9 mm |
3 mm |
.035 us |
Not Qualified |
YES |
e3 |
30 |
260 |
3 mm |
|||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
18 V |
2 |
CMOS |
TS 16949 |
12 mA |
STANDARD |
18 V |
.18 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
4.5 V |
MOSFET Drivers |
4.5 V |
2.54 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T8 |
5.08 mm |
1.5 A |
7.62 mm |
.135 us |
Not Qualified |
INVERTED |
YES |
e3 |
9.5 mm |
|||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
2 |
CMOS |
.045 us |
4.5/18 |
SMALL OUTLINE |
SOP8,.25 |
MOSFET Drivers |
4.5 V |
1.27 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
1.5 A |
3.91 mm |
.045 us |
Not Qualified |
YES |
e3 |
4.9 mm |
||||||||||||||||||||
Renesas Electronics |
FULL BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
20 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
1 |
12 V |
110 us |
SMALL OUTLINE |
9.5 V |
1.27 mm |
85 Cel |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G20 |
1 |
2.65 mm |
7.5 mm |
90 us |
YES |
e0 |
12.8 mm |
||||||||||||||||||||||||||
Intersil |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
75 V |
1 |
48 V |
10/75 |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC20,.20SQ,25 |
MOSFET Drivers |
10 V |
.8 mm |
105 Cel |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-N16 |
1 |
1 mm |
2 A |
5 mm |
.3 us |
Not Qualified |
YES |
e0 |
5 mm |
||||||||||||||||||||||
|
Analog Devices |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
HTSSOP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 V |
1 |
CMOS |
6 V |
.065 us |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
4 V |
.65 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-G8 |
1 |
1.1 mm |
1.1 A |
3 mm |
.065 us |
Not Qualified |
YES |
e3 |
30 |
260 |
3 mm |
||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
4 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
1 |
TS 16949 |
1.5 mA |
STANDARD |
5 V |
.08 us |
SMALL OUTLINE, THIN PROFILE |
TO-253 |
4.5 V |
1.9 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G4 |
1.12 mm |
1.2 A |
1.3 mm |
.1 us |
Not Qualified |
INVERTED |
NO |
e4 |
2.92 mm |
|||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED IGBT DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BIPOLAR |
OVER CURRENT; OVER VOLTAGE |
15 V |
.3 us |
15 |
SMALL OUTLINE |
SOP8,.25 |
Peripheral Drivers |
1.27 mm |
105 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
3.9 mm |
.3 us |
Not Qualified |
e3 |
30 |
260 |
SINK |
4.9 mm |
|||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
2 |
BCDMOS |
TS 16949 |
8 mA |
STANDARD |
18 V |
.08 us |
SMALL OUTLINE |
SOP8,.25 |
4.5 V |
4.5 V |
1.27 mm |
85 Cel |
TOTEM-POLE |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
1 |
1.73 mm |
1.5 A |
3.94 mm |
.1 us |
Not Qualified |
COMPLEMENTARY |
YES |
e4 |
30 |
260 |
4.93 mm |
|||||||||||||
|
Microchip Technology |
AND GATE BASED MOSFET DRIVER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
18 V |
4 |
CMOS |
8 mA |
STANDARD |
18 V |
.15 us |
4.5/18 |
IN-LINE |
DIP14,.3 |
4.5 V |
MOSFET Drivers |
4.5 V |
2.54 mm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDIP-T14 |
1.2 A |
7.62 mm |
.15 us |
Not Qualified |
TRUE |
YES |
e3 |
||||||||||||||||||
|
Renesas Electronics |
FULL BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
THROUGH-HOLE |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
15 V |
1 |
12 V |
110 us |
IN-LINE |
9.5 V |
2.54 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T20 |
5.33 mm |
7.62 mm |
90 us |
YES |
e3 |
25.895 mm |
||||||||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
18 V |
2 |
BCDMOS |
.1 us |
IN-LINE |
4.5 V |
2.54 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T8 |
3 A |
7.62 mm |
.1 us |
Not Qualified |
NO |
e3 |
9.525 mm |
|||||||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
2 |
TS 16949 |
8 mA |
SCHMITT TRIGGER |
18 V |
.08 us |
4.5/18 |
SMALL OUTLINE |
SOP8,.25 |
4.5 V |
MOSFET Drivers |
4.5 V |
1.27 mm |
85 Cel |
TOTEM-POLE |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
1.5 A |
3.9 mm |
.1 us |
Not Qualified |
COMPLEMENTARY |
YES |
e3 |
40 |
260 |
4.9 mm |
||||||||||||
|
Renesas Electronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
16 V |
1 |
15 V |
25 us |
SMALL OUTLINE |
4.5 V |
1.27 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
3 |
1.727 mm |
4 A |
3.911 mm |
25 us |
NO |
e3 |
30 |
260 |
4.9 mm |
||||||||||||||||||||||
|
Infineon Technologies |
HALF BRIDGE BASED IGBT/MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 V |
1 |
OVER CURRENT; UNDER VOLTAGE |
STANDARD |
15 V |
.61 us |
15 |
SMALL OUTLINE |
SOP14,.25 |
Peripheral Drivers |
10 V |
1.27 mm |
105 Cel |
-40 Cel |
TIN |
DUAL |
R-PDSO-G14 |
3 |
1.75 mm |
2.3 A |
3.9 mm |
.59 us |
Not Qualified |
TRUE |
YES |
e3 |
SOURCE AND SINK |
8.65 mm |
||||||||||||||||
|
Infineon Technologies |
HALF BRIDGE BASED IGBT DRIVER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
20 V |
2 us |
-8 V |
SMALL OUTLINE |
13 V |
4.5 V |
1.27 mm |
105 Cel |
15 V |
-40 Cel |
TIN |
DUAL |
R-PDSO-G16 |
3 |
2.64 mm |
2 A |
7.52 mm |
2 us |
YES |
e3 |
10.34 mm |
||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
10 |
VSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
2 |
HVCMOS |
STANDARD |
700 us |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC8,.16,20 |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-N8 |
1 mm |
3 mm |
3150 us |
COMPLEMENTARY |
YES |
e4 |
4 mm |
|||||||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
HVCMOS |
TS 16949 |
STANDARD |
5 V |
700 us |
SMALL OUTLINE |
SOP8,.25 |
1.27 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
3.9 mm |
3150 us |
Not Qualified |
TRUE |
YES |
e3 |
260 |
4.9 mm |
||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
1 |
CMOS |
TS 16949 |
3 mA |
SCHMITT TRIGGER |
18 V |
.16 us |
4.5/18 |
SMALL OUTLINE |
SOP8,.25 |
4.5 V |
MOSFET Drivers |
4.5 V |
1.27 mm |
85 Cel |
TOTEM-POLE |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G8 |
3 |
1.75 mm |
6 A |
3.9 mm |
.16 us |
Not Qualified |
TRUE |
YES |
e3 |
40 |
260 |
4.9 mm |
|||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
2 |
CMOS |
.06 us |
SMALL OUTLINE |
1.27 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
1.5 A |
3.9 mm |
.04 us |
Not Qualified |
NO |
e3 |
4.9 mm |
|||||||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
2 |
CMOS |
.045 us |
SMALL OUTLINE |
1.27 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
1.5 A |
3.9 mm |
.045 us |
Not Qualified |
NO |
e3 |
4.9 mm |
|||||||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
18 V |
1 |
BCDMOS |
3 mA |
STANDARD |
18 V |
.2 us |
IN-LINE |
DIP8,.3 |
4.5 V |
4.5 V |
2.54 mm |
85 Cel |
TOTEM-POLE |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T8 |
9 A |
7.62 mm |
.2 us |
Not Qualified |
INVERTED |
NO |
e3 |
9.525 mm |
||||||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
4 A |
2 |
2 |
BICMOS |
1.6 mA |
14 V |
.04 us |
4.5/15 |
SMALL OUTLINE |
SOP8,.25 |
MOSFET Drivers |
4.5 V |
1.27 mm |
105 Cel |
TOTEM-POLE |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
4 A |
3.9 mm |
.05 us |
Not Qualified |
COMPLEMENTARY |
NO |
e4 |
30 |
260 |
4.9 mm |
||||||||||||
Renesas Electronics |
FULL BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
20 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
1 |
MOS |
12 V |
.14 us |
SMALL OUTLINE |
9.5 V |
1.27 mm |
85 Cel |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G20 |
1 |
2.65 mm |
1.4 A |
7.5 mm |
.11 us |
Not Qualified |
YES |
e0 |
12.8 mm |
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|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
18 V |
2 |
TS 16949 |
8 mA |
SCHMITT TRIGGER |
18 V |
.1 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
4.5 V |
MOSFET Drivers |
4.5 V |
2.54 mm |
85 Cel |
TOTEM-POLE |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T8 |
5.33 mm |
1.5 A |
7.62 mm |
.08 us |
Not Qualified |
INVERTED |
YES |
e3 |
9.271 mm |
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|
Infineon Technologies |
HALF BRIDGE BASED IGBT DRIVER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
20 V |
.195 us |
-8,5,15 |
-8 V |
SMALL OUTLINE |
SOP16,.4 |
13 V |
Peripheral Drivers |
4.5 V |
1.27 mm |
105 Cel |
15 V |
-40 Cel |
TIN |
DUAL |
R-PDSO-G16 |
3 |
2.64 mm |
2 A |
7.52 mm |
.19 us |
Not Qualified |
YES |
e3 |
10.34 mm |
||||||||||||||||
|
Renesas Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
2 |
3.6 V |
13.2 V |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
5 V |
2.7 V |
.5 mm |
85 Cel |
12 V |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-N16 |
1 |
1 mm |
3.5 A |
4 mm |
NO |
e3 |
30 |
260 |
4 mm |
|||||||||||||||||||||
|
Renesas Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
2 |
3.6 V |
13.2 V |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
5 V |
2.7 V |
.5 mm |
85 Cel |
12 V |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-N16 |
1 |
1 mm |
3.5 A |
4 mm |
NO |
e3 |
30 |
260 |
4 mm |
|||||||||||||||||||||
|
Renesas Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
2 |
3.6 V |
13.2 V |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
5 V |
2.7 V |
.5 mm |
85 Cel |
12 V |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-N16 |
1 |
1 mm |
3.5 A |
4 mm |
NO |
e3 |
30 |
260 |
4 mm |
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|
Analog Devices |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
BICMOS |
.7 mA |
STANDARD |
5 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.08,20 |
3 V |
.5 mm |
105 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
S-PDSO-N8 |
1 |
.8 mm |
2 mm |
YES |
e3 |
30 |
260 |
2 mm |
|||||||||||||||||||||
|
Analog Devices |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
BICMOS |
5 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
4.2 V |
.5 mm |
105 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
S-PDSO-N8 |
1 |
.8 mm |
2 mm |
YES |
e3 |
10 |
260 |
2 mm |
||||||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
18 V |
1 |
BCDMOS |
1.5 mA |
STANDARD |
18 V |
.16 us |
IN-LINE |
DIP8,.3 |
4.5 V |
4.5 V |
2.54 mm |
85 Cel |
TOTEM-POLE |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T8 |
5.08 mm |
6 A |
7.62 mm |
.16 us |
Not Qualified |
TRUE |
NO |
e3 |
9.525 mm |
|||||||||||||||||
|
Psemi |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
BALL |
16 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6 V |
1 |
CMOS |
11.6 mA |
STANDARD |
5 V |
6 V |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA16,4X5,16 |
4 V |
4 V |
.4 mm |
105 Cel |
5 V |
3-STATE |
-40 Cel |
BOTTOM |
R-PBGA-B16 |
.318 mm |
1.64 mm |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
2.04 mm |
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|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
4 A |
2 |
2 |
BICMOS |
1.35 mA |
14 V |
.04 us |
4.5/15 |
SMALL OUTLINE |
SOP8,.25 |
MOSFET Drivers |
4.5 V |
1.27 mm |
105 Cel |
TOTEM-POLE |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
4 A |
3.9 mm |
.05 us |
Not Qualified |
INVERTED |
NO |
e4 |
30 |
260 |
4.9 mm |
||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
2 |
BIPOLAR |
12 V |
.1 us |
12 |
SMALL OUTLINE |
SOP8,.25 |
MOSFET Drivers |
6.5 V |
1.27 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
1 |
1.75 mm |
1.5 A |
3.9 mm |
.1 us |
Not Qualified |
NO |
e3 |
30 |
260 |
4.9 mm |
|||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
2 |
BCDMOS |
TS 16949 |
8 mA |
STANDARD |
18 V |
.08 us |
SMALL OUTLINE |
SOP8,.25 |
4.5 V |
4.5 V |
1.27 mm |
85 Cel |
TOTEM-POLE |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
1 |
1.73 mm |
1.5 A |
3.94 mm |
.1 us |
Not Qualified |
COMPLEMENTARY |
YES |
e4 |
30 |
260 |
4.93 mm |
|||||||||||||
|
Semikron International |
HALF BRIDGE BASED IGBT DRIVER |
INDUSTRIAL |
THROUGH-HOLE |
40 |
XMA |
RECTANGULAR |
UNSPECIFIED |
NO |
15.6 V |
1 |
500 mA |
15 V |
MICROELECTRONIC ASSEMBLY |
14.4 V |
85 Cel |
-40 Cel |
UNSPECIFIED |
R-XXMA-T40 |
YES |
MOSFET gate drivers are electronic components that are used to control and drive the operation of MOSFETs, which are commonly used as switches in electronic circuits. MOSFETs require a voltage applied to the gate terminal to turn them on or off, and MOSFET gate drivers provide this voltage.
MOSFET gate drivers can be classified into several types based on their specific applications and characteristics. Some of the most common types of MOSFET gate drivers include single-channel drivers, half-bridge drivers, and full-bridge drivers.
Single-channel drivers are used to control a single MOSFET, while half-bridge and full-bridge drivers are used to control multiple MOSFETs in various configurations. MOSFET gate drivers typically include a level shifter, a buffer, and a gate driver circuit.
MOSFET gate drivers are critical components of electronic circuits, providing a way to control and drive the operation of MOSFETs. They are used in a wide range of applications, including motor control, power supplies, and inverters.