Part | RoHS | Manufacturer | Interface IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Maximum Supply Voltage | Maximum Output Current | No. of Functions | No. of Channels | Technology | Screening Level | Built-in Protections | Maximum Supply Current | Input Characteristics | Nominal Supply Voltage | Maximum Supply Voltage-1 | Turn-on Time | Power Supplies (V) | Nominal Negative Supply Voltage | Package Style (Meter) | Package Equivalence Code | Minimum Supply Voltage-1 | Sub-Category | Minimum Supply Voltage | Terminal Pitch | Maximum Operating Temperature | Nominal Supply Voltage-1 | Output Characteristics | Minimum Operating Temperature | Driver No. of Bits | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Nominal Output Peak Current Limit | Width | Turn-off Time | Qualification | Output Polarity | High Side Driver | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Current Flow Direction | Length |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
FULL BRIDGE BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
1 |
6.6 mA |
SCHMITT TRIGGER |
12 V |
.15 us |
SMALL OUTLINE |
SOP8,.24 |
8.5 V |
1.27 mm |
125 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
1.75 mm |
3.9 mm |
.1 us |
TRUE |
YES |
1.25A PEAK CURRENT |
e3 |
30 |
260 |
9.9 mm |
||||||||||||||||||
|
Diodes Incorporated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
6 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
AEC-Q101 |
1 mA |
STANDARD |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
TSOP6,.11,37 |
.95 mm |
150 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G6 |
1 |
1.4 mm |
5 A |
1.6 mm |
Not Qualified |
TRUE |
NO |
e3 |
30 |
260 |
3 mm |
|||||||||||||||||||||
|
Texas Instruments |
AND GATE BASED IGBT/MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
5 A |
1 |
1 |
5 V |
30 V |
.11 us |
SMALL OUTLINE |
15 V |
2.25 V |
1.27 mm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
2 |
2.65 mm |
5 A |
7.5 mm |
.11 us |
NO |
e4 |
30 |
260 |
10.3 mm |
||||||||||||||||||
|
Renesas Electronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
1 |
6.6 mA |
SCHMITT TRIGGER |
12 V |
.15 us |
SMALL OUTLINE |
SOP8,.24 |
8.5 V |
1.27 mm |
125 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
1.75 mm |
3.9 mm |
.1 us |
TRUE |
YES |
1.25A PEAK CURRENT |
e3 |
30 |
260 |
9.9 mm |
||||||||||||||||||
|
Diodes Incorporated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
6 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
5/30 |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
TSOP6,.11,37 |
MOSFET Drivers |
.95 mm |
150 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G6 |
1 |
1.4 mm |
1.6 mm |
Not Qualified |
NO |
e3 |
30 |
260 |
3 mm |
||||||||||||||||||||||||
|
Analog Devices |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
HTSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
135 V |
1 |
CMOS |
10 V |
.07 us |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
TSSOP16,.19,20 |
3.5 V |
.5 mm |
150 Cel |
-55 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G16 |
1 |
1.1 mm |
3 mm |
.07 us |
YES |
e3 |
30 |
260 |
4.039 mm |
|||||||||||||||||||||
|
Diodes Incorporated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
6 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
AEC-Q101 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSOP6,.05,25 |
.65 mm |
150 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G6 |
1 |
1.1 mm |
1.3 mm |
TRUE |
NO |
e3 |
30 |
260 |
2.15 mm |
|||||||||||||||||||||||||
|
Diodes Incorporated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
6 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
12 V |
8/12 |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
TSOP6,.11,37 |
MOSFET Drivers |
.95 mm |
150 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G6 |
1 |
1.45 mm |
9 A |
1.55 mm |
Not Qualified |
NO |
e3 |
30 |
260 |
2.9 mm |
||||||||||||||||||||||
|
Analog Devices |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
12 |
HTSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
135 V |
1 |
CMOS |
10 V |
.07 us |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
TSSOP12/16,.19,20 |
3.5 V |
.5 mm |
150 Cel |
-55 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G12 |
1 |
1.1 mm |
3 mm |
.07 us |
YES |
e3 |
4.039 mm |
|||||||||||||||||||||||
Analog Devices |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
17 V |
2 |
38535Q/M;38534H;883B |
15 V |
.04 us |
15 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
1 |
5.08 mm |
7.62 mm |
.06 us |
Not Qualified |
YES |
e0 |
||||||||||||||||||||||
|
Microchip Technology |
AND GATE BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
4 |
CMOS |
TS 16949 |
8 mA |
STANDARD |
18 V |
.15 us |
4.5/18 |
SMALL OUTLINE |
SOP16,.4 |
4.5 V |
MOSFET Drivers |
4.5 V |
1.27 mm |
125 Cel |
TOTEM-POLE |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
2.64 mm |
1.2 A |
7.49 mm |
.15 us |
Not Qualified |
TRUE |
YES |
e3 |
10.3 mm |
||||||||||||||
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
20 V |
1 |
CMOS |
15 V |
420 V |
.26 us |
15 |
IN-LINE |
DIP14,.3 |
6 V |
MOSFET Drivers |
5 V |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T14 |
4.44 mm |
2 A |
7.62 mm |
.22 us |
Not Qualified |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
19 mm |
|||||||||||||||||||
|
Analog Devices |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
HTSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
150 V |
1 |
CMOS |
10 V |
.07 us |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
TSSOP16,.19,20 |
3.5 V |
.5 mm |
150 Cel |
-55 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G16 |
1 |
1.1 mm |
3 mm |
.07 us |
YES |
e3 |
30 |
260 |
4.039 mm |
|||||||||||||||||||||
|
Renesas Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
1 |
12 V |
150 us |
SMALL OUTLINE |
8.5 V |
1.27 mm |
125 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
1.75 mm |
1 A |
3.9 mm |
100 us |
YES |
e3 |
30 |
260 |
9.9 mm |
||||||||||||||||||||||
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
16 |
QCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 V |
1 |
CMOS |
15 V |
420 V |
.26 us |
15 |
CHIP CARRIER |
LCC18,.3X.35 |
6 V |
MOSFET Drivers |
5 V |
1.27 mm |
125 Cel |
-55 Cel |
QUAD |
R-PQCC-N16 |
3.22 mm |
2 A |
7.305 mm |
.22 us |
Not Qualified |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
8.955 mm |
|||||||||||||||||||
|
Renesas Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 V |
1 |
12 V |
150 us |
SMALL OUTLINE |
8.5 V |
1.27 mm |
125 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
3 |
1.75 mm |
1 A |
3.9 mm |
100 us |
YES |
e3 |
30 |
260 |
9.9 mm |
||||||||||||||||||||||
Analog Devices |
MILITARY |
GULL WING |
8 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
12 V |
12 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP8,.19 |
MOSFET Drivers |
.635 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||
|
Microchip Technology |
AND GATE BASED MOSFET DRIVER |
MILITARY |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
18 V |
4 |
CMOS |
TS 16949 |
8 mA |
STANDARD |
18 V |
.15 us |
4.5/18 |
SMALL OUTLINE |
SOP16,.4 |
4.5 V |
MOSFET Drivers |
4.5 V |
1.27 mm |
125 Cel |
TOTEM-POLE |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G16 |
2.64 mm |
1.2 A |
7.49 mm |
.15 us |
Not Qualified |
TRUE |
YES |
e3 |
10.3 mm |
||||||||||||||
|
Renesas Electronics |
FULL BRIDGE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
15 V |
1 |
12 V |
.15 us |
IN-LINE |
8.5 V |
2.54 mm |
125 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDIP-T16 |
5.33 mm |
7.62 mm |
.1 us |
YES |
e3 |
19.17 mm |
||||||||||||||||||||||||||
|
Renesas Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
FLAT |
16 |
DFP |
RECTANGULAR |
300k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
20 V |
1 |
MIL-PRF-38535 Class Q |
.425 us |
FLATPACK |
12 V |
1.27 mm |
125 Cel |
-55 Cel |
GOLD |
DUAL |
R-CDFP-F16 |
2.92 mm |
.9 A |
6.73 mm |
.42 us |
Qualified |
YES |
e4 |
||||||||||||||||||||||||
|
Analog Devices |
BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER |
MILITARY |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
CMOS |
3.3 V |
18 V |
.072 us |
SMALL OUTLINE |
7.6 V |
3 V |
1.27 mm |
125 Cel |
10 V |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
3 |
1.75 mm |
4 A |
3.9 mm |
.072 us |
NO |
e4 |
30 |
260 |
4.9 mm |
||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
2 |
TS 16949 |
8 mA |
SCHMITT TRIGGER |
18 V |
.1 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
4.5 V |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
TOTEM-POLE |
-55 Cel |
TIN SILVER COPPER |
DUAL |
R-GDIP-T8 |
5.08 mm |
1.5 A |
7.62 mm |
.08 us |
Not Qualified |
INVERTED |
YES |
e1 |
9.78 mm |
|||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
1 |
CMOS |
TS 16949 |
3 mA |
SCHMITT TRIGGER |
18 V |
.16 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
4.5 V |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
TOTEM-POLE |
-55 Cel |
TIN SILVER COPPER |
DUAL |
R-GDIP-T8 |
5.08 mm |
6 A |
7.62 mm |
.16 us |
Not Qualified |
TRUE |
YES |
e1 |
9.652 mm |
||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
15 V |
2 |
CMOS |
MIL-STD-883 Class B |
.04 us |
4.5/15 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
1 |
.06 us |
Not Qualified |
YES |
e0 |
||||||||||||||||||||||||
|
Onsemi |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
40 |
HQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
CHIP CARRIER, HEAT SINK/SLUG |
4.5 V |
.5 mm |
150 Cel |
-55 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQCC-N40 |
1 |
1.1 mm |
6 mm |
Not Qualified |
YES |
e3 |
30 |
260 |
6 mm |
||||||||||||||||||||||||
|
Infineon Technologies |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
18 V |
1 |
CMOS |
15 V |
418 V |
.27 us |
15 |
IN-LINE |
DIP8,.3 |
7 V |
MOSFET Drivers |
12 V |
2.54 mm |
125 Cel |
15 V |
-55 Cel |
DUAL |
R-XDIP-T8 |
4.44 mm |
2 A |
7.62 mm |
.33 us |
Not Qualified |
YES |
FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT |
NOT SPECIFIED |
NOT SPECIFIED |
10.31 mm |
||||||||||||||||
|
Microchip Technology |
AND GATE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
4 |
CMOS |
.1 us |
4.5/18 |
IN-LINE |
DIP14,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-GDIP-T14 |
5.08 mm |
1.2 A |
7.62 mm |
.1 us |
Not Qualified |
YES |
e3 |
19.305 mm |
|||||||||||||||||||||
|
Analog Devices |
BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER |
MILITARY |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
CMOS |
3.3 V |
18 V |
.072 us |
SMALL OUTLINE |
7.6 V |
3 V |
1.27 mm |
125 Cel |
10 V |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
3 |
1.75 mm |
4 A |
3.9 mm |
.072 us |
NO |
e4 |
30 |
260 |
4.9 mm |
||||||||||||||||||
|
Diodes Incorporated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1.27 mm |
150 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-N8 |
1 |
1 mm |
5.1 mm |
Not Qualified |
NO |
e3 |
260 |
6 mm |
||||||||||||||||||||||||||||
Infineon Technologies |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
20 V |
1 |
CMOS |
15 V |
420 V |
.26 us |
FLATPACK |
6 V |
10 V |
1.27 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDFP-F14 |
2.92 mm |
2 A |
6.285 mm |
.22 us |
Not Qualified |
YES |
e0 |
||||||||||||||||||||||
|
Microchip Technology |
AND GATE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
4 |
CMOS |
.1 us |
4.5/18 |
IN-LINE |
DIP14,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
MATTE TIN |
DUAL |
R-GDIP-T14 |
5.08 mm |
1.2 A |
7.62 mm |
.1 us |
Not Qualified |
YES |
e3 |
19.305 mm |
|||||||||||||||||||||
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
2 |
BICMOS |
MIL-STD-883 |
STANDARD |
.1 us |
IN-LINE |
4.5 V |
125 Cel |
TOTEM-POLE |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
3 A |
.1 us |
Not Qualified |
TRUE |
NO |
e0 |
|||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
17 V |
2 |
15 V |
.04 us |
4.5/15 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
1 |
5.08 mm |
7.62 mm |
.06 us |
Not Qualified |
YES |
e0 |
245 |
||||||||||||||||||||||
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
20 V |
3 |
BICMOS |
15 V |
20 V |
.85 us |
15 |
IN-LINE |
DIP28,.6 |
10 V |
MOSFET Drivers |
10 V |
2.54 mm |
125 Cel |
15 V |
-55 Cel |
DUAL |
R-PDIP-T28 |
4.8 mm |
.5 A |
15.24 mm |
.6 us |
Not Qualified |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
35.64 mm |
||||||||||||||||||
|
Renesas Electronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
5.25 V |
1 |
5 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.08,20 |
4.75 V |
.5 mm |
75 Cel |
-10 Cel |
DUAL |
S-PDSO-N8 |
1 |
.8 mm |
.0004 A |
2 mm |
NO |
2 mm |
|||||||||||||||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
8 |
HTSSOP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 V |
4 A |
2 |
2 |
BCDMOS |
1.8 mA |
14 V |
.045 us |
4.5/15 |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
TSSOP8,.19 |
MOSFET Drivers |
4.5 V |
.65 mm |
125 Cel |
TOTEM-POLE |
-55 Cel |
NICKEL PALLADIUM GOLD SILVER |
DUAL |
S-PDSO-G8 |
1 |
1.1 mm |
4 A |
3 mm |
.05 us |
Not Qualified |
TRUE |
NO |
e4 |
30 |
260 |
3 mm |
||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
2 |
TS 16949 |
8 mA |
SCHMITT TRIGGER |
18 V |
.1 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
4.5 V |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
TOTEM-POLE |
-55 Cel |
TIN SILVER COPPER |
DUAL |
R-GDIP-T8 |
5.08 mm |
1.5 A |
7.62 mm |
.08 us |
Not Qualified |
TRUE |
YES |
e1 |
9.78 mm |
|||||||||||||||
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
40 V |
1.5 A |
1 |
1 |
BIPOLAR |
MIL-STD-883 |
12 mA |
STANDARD |
20 V |
.06 us |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
5 V |
2.54 mm |
125 Cel |
TOTEM-POLE |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-GDIP-T8 |
5.08 mm |
1.5 A |
7.62 mm |
.06 us |
Qualified |
COMPLEMENTARY |
NO |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
9.58 mm |
|||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
2 |
TS 16949 |
3.5 mA |
SCHMITT TRIGGER |
18 V |
.16 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
4.5 V |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
TOTEM-POLE |
-55 Cel |
TIN SILVER COPPER |
DUAL |
R-GDIP-T8 |
5.08 mm |
3 A |
7.62 mm |
.16 us |
Not Qualified |
TRUE |
YES |
e1 |
9.78 mm |
|||||||||||||||
Analog Devices |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
18 V |
2 |
CMOS |
38535Q/M;38534H;883B |
.06 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T8 |
1 |
5.08 mm |
2 A |
7.62 mm |
.04 us |
Not Qualified |
NO |
e0 |
|||||||||||||||||||||
|
IXYS Corporation |
BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
MILITARY |
THROUGH-HOLE |
5 |
TO-220 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 V |
1 |
CMOS |
TRANSIENT; OVER CURRENT; OVER VOLTAGE |
18 V |
33 us |
FLANGE MOUNT |
4.5 V |
125 Cel |
-55 Cel |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T5 |
14 A |
34 us |
Not Qualified |
e3 |
35 |
260 |
SOURCE AND SINK |
||||||||||||||||||||||||
|
Analog Devices |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
GULL WING |
8 |
HTSSOP |
SQUARE |
PLASTIC/EPOXY |
YES |
13.5 V |
1 |
CMOS |
12 V |
.05 us |
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH |
7.2 V |
.65 mm |
125 Cel |
-55 Cel |
MATTE TIN |
DUAL |
S-PDSO-G8 |
1 |
1.1 mm |
2.5 A |
3 mm |
.045 us |
Not Qualified |
YES |
e3 |
30 |
260 |
3 mm |
||||||||||||||||||||
|
IXYS Corporation |
BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 V |
2 |
CMOS |
OVER CURRENT; THERMAL |
18 V |
.06 us |
IN-LINE |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
Matte Tin (Sn) |
DUAL |
R-PDIP-T8 |
4.57 mm |
4 A |
7.62 mm |
.059 us |
Not Qualified |
e3 |
35 |
260 |
SOURCE AND SINK |
9.59 mm |
||||||||||||||||||||
Renesas Electronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
FLAT |
16 |
DFP |
RECTANGULAR |
300k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
1 |
BICMOS |
MIL-PRF-38535 Class V |
.25 us |
FLATPACK |
12 V |
1.27 mm |
125 Cel |
-55 Cel |
GOLD |
DUAL |
R-CDFP-F16 |
2.92 mm |
2 A |
6.73 mm |
.25 us |
Qualified |
NO |
e4 |
||||||||||||||||||||||||
|
IXYS Corporation |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 V |
2 |
CMOS |
18 V |
4.5/35 |
SMALL OUTLINE |
SOP8,.25 |
MOSFET Drivers |
4.5 V |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-PDSO-G8 |
1.75 mm |
3.9 mm |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
4.9 mm |
||||||||||||||||||||||||
|
IXYS Corporation |
BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
MILITARY |
GULL WING |
8 |
HSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 V |
2 |
MOS |
OVER CURRENT |
18 V |
.06 us |
SMALL OUTLINE, HEAT SINK/SLUG |
4.5 V |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-PDSO-G8 |
1.75 mm |
4 A |
3.9 mm |
.059 us |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
SOURCE AND SINK |
4.9 mm |
||||||||||||||||||||||
|
IXYS Corporation |
BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
MILITARY |
GULL WING |
8 |
HSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 V |
2 |
CMOS |
OVER CURRENT; THERMAL |
18 V |
.06 us |
SMALL OUTLINE |
4.5 V |
1.27 mm |
125 Cel |
-55 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G8 |
1.75 mm |
4 A |
3.9 mm |
.059 us |
Not Qualified |
e3 |
35 |
260 |
SOURCE AND SINK |
4.9 mm |
||||||||||||||||||||
|
IXYS Corporation |
BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
5 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 V |
1 |
18 V |
.045 us |
FLANGE MOUNT |
8.5 V |
125 Cel |
-55 Cel |
Matte Tin (Sn) |
SINGLE |
R-PSFM-T5 |
30 A |
.039 us |
Not Qualified |
YES |
e3 |
35 |
260 |
MOSFET gate drivers are electronic components that are used to control and drive the operation of MOSFETs, which are commonly used as switches in electronic circuits. MOSFETs require a voltage applied to the gate terminal to turn them on or off, and MOSFET gate drivers provide this voltage.
MOSFET gate drivers can be classified into several types based on their specific applications and characteristics. Some of the most common types of MOSFET gate drivers include single-channel drivers, half-bridge drivers, and full-bridge drivers.
Single-channel drivers are used to control a single MOSFET, while half-bridge and full-bridge drivers are used to control multiple MOSFETs in various configurations. MOSFET gate drivers typically include a level shifter, a buffer, and a gate driver circuit.
MOSFET gate drivers are critical components of electronic circuits, providing a way to control and drive the operation of MOSFETs. They are used in a wide range of applications, including motor control, power supplies, and inverters.