Part | RoHS | Manufacturer | Interface IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Maximum Supply Voltage | Maximum Output Current | No. of Functions | No. of Channels | Technology | Screening Level | Built-in Protections | Maximum Supply Current | Input Characteristics | Nominal Supply Voltage | Maximum Supply Voltage-1 | Turn-on Time | Power Supplies (V) | Nominal Negative Supply Voltage | Package Style (Meter) | Package Equivalence Code | Minimum Supply Voltage-1 | Sub-Category | Minimum Supply Voltage | Terminal Pitch | Maximum Operating Temperature | Nominal Supply Voltage-1 | Output Characteristics | Minimum Operating Temperature | Driver No. of Bits | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Nominal Output Peak Current Limit | Width | Turn-off Time | Qualification | Output Polarity | High Side Driver | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Current Flow Direction | Length |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
14 V |
3 A |
1 |
2 |
3 mA |
12 V |
45 us |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC10,.16,32 |
MOSFET Drivers |
9 V |
.8 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
1 |
.8 mm |
3 A |
4 mm |
45 us |
Not Qualified |
TRUE |
YES |
e3 |
30 |
260 |
4 mm |
||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
2.6 A |
1 |
2 |
12 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
5.5 V |
.5 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
S-PDSO-N10 |
1 |
1 mm |
3 mm |
YES |
e4 |
30 |
260 |
3 mm |
|||||||||||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
6 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
5.25 V |
7 A |
1 |
1 |
AEC-Q100 |
5 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
4.75 V |
.65 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N6 |
2 |
.8 mm |
2 mm |
NO |
e3 |
30 |
260 |
2 mm |
||||||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
14 V |
3 A |
1 |
2 |
3 mA |
12 V |
.056 us |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.16,32 |
MOSFET Drivers |
9 V |
.8 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
1 |
.8 mm |
3 A |
4 mm |
.056 us |
Not Qualified |
TRUE |
YES |
e3 |
30 |
260 |
4 mm |
||||||||||||||
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
14 |
HVQCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 V |
12 A |
1 |
BICMOS |
AEC-Q100 |
STANDARD |
35 V |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
4.5 V |
4.5 V |
125 Cel |
13.5 V |
OPEN-DRAIN |
-40 Cel |
QUAD |
R-PQCC-N14 |
1 mm |
12 A |
4.5 mm |
TRUE |
NO |
3 mm |
|||||||||||||||||||||||
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
32 |
HVQCCN |
SQUARE |
PLASTIC |
YES |
5.5 V |
1 |
AEC-Q100 |
5.5 mA |
STANDARD |
5 V |
37 V |
.85 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC32,.2SQ,20 |
4.9 V |
4.5 V |
.5 mm |
125 Cel |
13.5 V |
PUSH-PULL |
-40 Cel |
QUAD |
S-PQCC-N32 |
1 mm |
.062 A |
5 mm |
.6 us |
COMPLEMENTARY |
YES |
5 mm |
|||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
32 |
SQUARE |
PLASTIC/EPOXY |
YES |
37 V |
1 |
AEC-Q100 |
5.5 mA |
5 V |
37 V |
.85 us |
4.9 V |
4.5 V |
125 Cel |
13.5 V |
PUSH-PULL |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQCC-N32 |
2 |
.062 A |
.6 us |
COMPLEMENTARY |
YES |
e4 |
30 |
260 |
|||||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
20 V |
1 |
1.8 mA |
12 V |
.05 us |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.16,32 |
8.5 V |
.8 mm |
140 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
1 |
1 mm |
4 mm |
.05 us |
YES |
e3 |
30 |
260 |
4 mm |
|||||||||||||||||||||
|
Onsemi |
HALF BRIDGE BASED MOSFET DRIVER |
OTHER |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
13.2 V |
1 |
5 V |
4.5/13.2 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.08,20 |
MOSFET Drivers |
4.5 V |
.5 mm |
125 Cel |
-10 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
1 |
1 mm |
2 mm |
Not Qualified |
YES |
e3 |
30 |
260 |
2 mm |
|||||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
2.6 A |
1 |
2 |
12 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
5.5 V |
.5 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
S-PDSO-N10 |
1 |
1 mm |
3 mm |
YES |
e4 |
30 |
260 |
3 mm |
|||||||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HSON |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
3.5 A |
1 |
2 |
AEC-Q100 |
12 V |
.03 us |
SMALL OUTLINE, HEAT SINK/SLUG |
5.5 V |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N10 |
2 |
.03 us |
YES |
e4 |
30 |
260 |
||||||||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
56 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
37 V |
1 |
AEC-Q100 |
15.5 mA |
STANDARD |
13.5 V |
.85 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC56,.31SQ,20 |
4.9 V |
.5 mm |
125 Cel |
OPEN-DRAIN |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQCC-N56 |
3 |
1 mm |
.062 A |
8 mm |
.6 us |
TRUE |
YES |
e4 |
30 |
260 |
8 mm |
||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
24 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
1.4 mA |
STANDARD |
20 V |
.03 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC24,.16SQ,20 |
5 V |
5 V |
.5 mm |
125 Cel |
12 V |
PUSH-PULL |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQCC-N24 |
1 |
1 mm |
.75 A |
4 mm |
.03 us |
TRUE |
YES |
e4 |
30 |
260 |
4 mm |
||||||||||||||||
|
Renesas Electronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
20 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
75 V |
1 |
48 V |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
9 V |
.65 mm |
105 Cel |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-N20 |
3 |
1 mm |
5 mm |
.3 us |
YES |
e3 |
30 |
260 |
5 mm |
||||||||||||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
6 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
5.25 V |
7 A |
1 |
1 |
AEC-Q100 |
5 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
4.75 V |
.65 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N6 |
2 |
.8 mm |
2 mm |
NO |
e3 |
30 |
260 |
2 mm |
||||||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HVSON |
SQUARE |
UNSPECIFIED |
YES |
16 V |
2 |
.3 mA |
12 V |
.045 us |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC10,.16,32 |
7.5 V |
.8 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
QUAD |
S-XDSO-N10 |
1 |
.78 mm |
6 A |
4 mm |
.043 us |
YES |
SEATED HT-CALCULATED |
e4 |
30 |
260 |
4 mm |
|||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
14 V |
1 |
12 V |
.056 us |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.15,32 |
MOSFET Drivers |
8 V |
.8 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
1 |
.8 mm |
4 mm |
.056 us |
Not Qualified |
YES |
e3 |
30 |
260 |
4 mm |
|||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
14 V |
1 A |
1 |
2 |
2.9 mA |
12 V |
.056 us |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.15,32 |
MOSFET Drivers |
8 V |
.8 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
1 |
.8 mm |
1 A |
4 mm |
.056 us |
Not Qualified |
TRUE |
YES |
e3 |
30 |
260 |
4 mm |
||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
6 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
14 V |
7 A |
1 |
1 |
BICMOS |
2 mA |
12 V |
.04 us |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC6,.13,38 |
MOSFET Drivers |
3.5 V |
.95 mm |
125 Cel |
TOTEM-POLE |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N6 |
1 |
.8 mm |
7 A |
3 mm |
.04 us |
Not Qualified |
COMPLEMENTARY |
NO |
e3 |
30 |
260 |
3 mm |
||||||||||||
|
Microchip Technology |
FULL BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
16 |
HVQCCN |
SQUARE |
UNSPECIFIED |
YES |
16 V |
1 |
12 V |
.075 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
5.25 V |
.65 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N16 |
.9 mm |
1 A |
4 mm |
.075 us |
YES |
e4 |
4 mm |
|||||||||||||||||||||||||
|
Analog Devices |
HALF BRIDGE BASED MOSFET DRIVER |
OTHER |
NO LEAD |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6.5 V |
1 |
CMOS |
3.3 V |
6.5 V |
SMALL OUTLINE |
4 V |
3 V |
.45 mm |
85 Cel |
5 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-N8 |
1 |
.8 mm |
4.5 A |
2 mm |
Not Qualified |
YES |
e3 |
30 |
260 |
3 mm |
|||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
20 V |
1 |
1.8 mA |
12 V |
.05 us |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC10,.16,32 |
8.5 V |
.8 mm |
140 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N10 |
1 |
.8 mm |
4 mm |
.05 us |
YES |
e3 |
30 |
260 |
4 mm |
|||||||||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
6 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
7 A |
1 |
BICMOS |
AEC-Q100 |
12 V |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC6,.12,38 |
MOSFET Drivers |
.95 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N6 |
1 |
.8 mm |
7 A |
3 mm |
Not Qualified |
e3 |
30 |
260 |
3 mm |
||||||||||||||||||||
|
Microchip Technology |
FULL BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
1 |
.5 mA |
STANDARD |
12 V |
16 V |
.095 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC16,.16SQ,25 |
5.25 V |
5.25 V |
.65 mm |
125 Cel |
12 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQCC-N16 |
.9 mm |
1 A |
4 mm |
.095 us |
TRUE |
YES |
e4 |
4 mm |
||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
OTHER |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
13.2 V |
1 |
5 V |
4.5/13.2 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.08,20 |
MOSFET Drivers |
4.5 V |
.5 mm |
125 Cel |
-10 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
1 |
1 mm |
2 mm |
Not Qualified |
YES |
e3 |
30 |
260 |
2 mm |
|||||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
6 |
HVSON |
SQUARE |
UNSPECIFIED |
YES |
18 V |
1 |
MOS |
TRANSIENT |
12 V |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC6,.08,25 |
MOSFET Drivers |
4.5 V |
.65 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
DUAL |
S-XDSO-N6 |
1 |
1 mm |
2 mm |
Not Qualified |
e4 |
30 |
260 |
SOURCE AND SINK |
2 mm |
|||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
24 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
22 V |
1 |
AEC-Q100 |
18 mA |
SCHMITT TRIGGER |
20 V |
.05 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC24,.16SQ,20 |
10 V |
.5 mm |
125 Cel |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-N24 |
1 |
.9 mm |
6 A |
4 mm |
.05 us |
YES |
UNDERVOLTAGE LOCKOUT |
e3 |
30 |
260 |
4 mm |
|||||||||||||||||
|
Analog Devices |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6.5 V |
1 |
CMOS |
3.3 V |
6.5 V |
SMALL OUTLINE |
4 V |
3 V |
.45 mm |
125 Cel |
5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-N8 |
1 |
.8 mm |
4.5 A |
2 mm |
Not Qualified |
YES |
e3 |
30 |
260 |
3 mm |
|||||||||||||||||||
|
Microchip Technology |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
1 |
12 V |
.075 us |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
5.25 V |
.5 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N10 |
.6 mm |
2.5 mm |
.075 us |
YES |
e3 |
2.5 mm |
||||||||||||||||||||||||||
|
Microchip Technology |
FULL BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
1 |
.5 mA |
STANDARD |
12 V |
16 V |
.095 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC16,.16SQ,25 |
5.25 V |
5.25 V |
.65 mm |
125 Cel |
12 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQCC-N16 |
.9 mm |
1 A |
4 mm |
.095 us |
TRUE |
YES |
e4 |
4 mm |
||||||||||||||||||
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
3.5 A |
1 |
2 |
4.5 mA |
12 V |
30 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC10,.12,20 |
5.5 V |
.5 mm |
125 Cel |
-40 Cel |
DUAL |
S-PDSO-N10 |
1 mm |
3.5 A |
3 mm |
30 us |
YES |
3 mm |
||||||||||||||||||||||||
|
Texas Instruments |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
14 V |
7 A |
1 |
1 |
BICMOS |
2 mA |
12 V |
.04 us |
12 |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.13,38 |
MOSFET Drivers |
3.5 V |
.95 mm |
125 Cel |
TOTEM-POLE |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N6 |
1 |
.8 mm |
7 A |
3 mm |
.04 us |
Not Qualified |
COMPLEMENTARY |
NO |
e3 |
30 |
260 |
3 mm |
||||||||||||
Microchip Technology |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
16 V |
1 |
12 V |
.075 us |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
5.25 V |
.5 mm |
125 Cel |
-40 Cel |
DUAL |
S-PDSO-N10 |
.6 mm |
2.5 mm |
.075 us |
YES |
2.5 mm |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
2 |
3.6 V |
13.2 V |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
5 V |
2.7 V |
.5 mm |
85 Cel |
12 V |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-N16 |
1 |
1 mm |
3.5 A |
4 mm |
NO |
e3 |
30 |
260 |
4 mm |
|||||||||||||||||||||
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
16 |
QCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 V |
1 |
CMOS |
15 V |
420 V |
.26 us |
15 |
CHIP CARRIER |
LCC18,.3X.35 |
6 V |
MOSFET Drivers |
5 V |
1.27 mm |
125 Cel |
-55 Cel |
QUAD |
R-PQCC-N16 |
3.22 mm |
2 A |
7.305 mm |
.22 us |
Not Qualified |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
8.955 mm |
|||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
5 A |
1 |
2 |
AEC-Q100 |
5 V |
.045 us |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
4.5 V |
.8 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N10 |
1 |
.8 mm |
5 A |
4 mm |
.045 us |
YES |
e3 |
30 |
260 |
4 mm |
|||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
20 V |
1 |
12 V |
.027 us |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
4.5 V |
.5 mm |
140 Cel |
-40 Cel |
NICKEL GOLD PALLADIUM |
DUAL |
S-PDSO-N8 |
1 |
1 mm |
10 A |
2 mm |
.027 us |
NO |
30 |
260 |
2 mm |
|||||||||||||||||||||||
|
Onsemi |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
33 |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
16 V |
MICROELECTRONIC ASSEMBLY |
4.5 V |
4.5 V |
125 Cel |
12 V |
-40 Cel |
Matte Tin (Sn) - annealed |
UNSPECIFIED |
S-PXMA-N33 |
1 |
.8 mm |
5 mm |
YES |
3 V VIN IS POSSIBLE ACCORDING TO APPLICATION CONDITION |
e3 |
30 |
260 |
5 mm |
|||||||||||||||||||||||
|
Microchip Technology |
BUFFER OR INVERTER BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
4 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
9 V |
1 |
3.3 V |
CHIP CARRIER, VERY THIN PROFILE |
2.7 V |
.65 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N4 |
.6 mm |
1.2 mm |
YES |
e4 |
1.2 mm |
||||||||||||||||||||||||||||
|
Analog Devices |
HALF BRIDGE BASED MOSFET DRIVER |
OTHER |
NO LEAD |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6.5 V |
1 |
CMOS |
3.3 V |
6.5 V |
SMALL OUTLINE |
4 V |
3 V |
.45 mm |
85 Cel |
5 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-N8 |
1 |
.8 mm |
4.5 A |
2 mm |
Not Qualified |
YES |
e3 |
30 |
260 |
3 mm |
|||||||||||||||||||
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
10 |
HVSON |
SQUARE |
UNSPECIFIED |
YES |
14 V |
1 |
12 V |
.705 us |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC10,.16,32 |
MOSFET Drivers |
8 V |
.8 mm |
125 Cel |
-40 Cel |
TIN LEAD |
DUAL |
S-XDSO-N10 |
1 |
.8 mm |
1.8 A |
4 mm |
.056 us |
Not Qualified |
YES |
e0 |
260 |
4 mm |
||||||||||||||||||||
|
Analog Devices |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6.5 V |
1 |
CMOS |
3.3 V |
6.5 V |
SMALL OUTLINE |
4 V |
3 V |
.45 mm |
125 Cel |
5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-N8 |
1 |
.8 mm |
4.5 A |
2 mm |
Not Qualified |
YES |
e3 |
30 |
260 |
3 mm |
|||||||||||||||||||
|
Onsemi |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
.04 us |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.08,20 |
4.5 V |
.5 mm |
100 Cel |
3-STATE |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
1 |
1 mm |
2 mm |
.03 us |
YES |
e3 |
30 |
260 |
2 mm |
|||||||||||||||||||||
|
Analog Devices |
AND GATE BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
13.2 V |
1 |
12 V |
.07 us |
12 |
SMALL OUTLINE |
SOLCC8,.12,20 |
MOSFET Drivers |
4.15 V |
.5 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
S-PDSO-N8 |
3 |
.9 mm |
3 mm |
.035 us |
Not Qualified |
YES |
e3 |
30 |
260 |
3 mm |
|||||||||||||||||||
|
Onsemi |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
31 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
5 V |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC31(UNSPEC) |
4.5 V |
.5 mm |
125 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQCC-N31 |
1 |
.8 mm |
7 A |
5 mm |
YES |
e3 |
30 |
260 |
5 mm |
|||||||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
40 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
1.8 V |
38 V |
.25 us |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
6 V |
0 V |
.5 mm |
125 Cel |
8 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
QUAD |
S-PQCC-N40 |
1 |
1 mm |
.15 A |
6 mm |
.25 us |
YES |
e4 |
30 |
260 |
6 mm |
|||||||||||||||||||
Intersil |
BUFFER OR INVERTER BASED MOSFET DRIVER |
INDUSTRIAL |
NO LEAD |
16 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
75 V |
1 |
48 V |
10/75 |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC20,.20SQ,25 |
MOSFET Drivers |
10 V |
.8 mm |
105 Cel |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-N16 |
1 |
1 mm |
2 A |
5 mm |
.3 us |
Not Qualified |
YES |
e0 |
5 mm |
||||||||||||||||||||||
|
Texas Instruments |
HALF BRIDGE BASED MOSFET DRIVER |
AUTOMOTIVE |
NO LEAD |
8 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
17 V |
4 A |
1 |
2 |
5.2 mA |
12 V |
.6 us |
12 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.15,32 |
MOSFET Drivers |
8 V |
.8 mm |
140 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
DUAL |
S-PDSO-N8 |
1 |
1 mm |
4 A |
4 mm |
.4 us |
Not Qualified |
TRUE |
YES |
e4 |
NOT SPECIFIED |
260 |
4 mm |
MOSFET gate drivers are electronic components that are used to control and drive the operation of MOSFETs, which are commonly used as switches in electronic circuits. MOSFETs require a voltage applied to the gate terminal to turn them on or off, and MOSFET gate drivers provide this voltage.
MOSFET gate drivers can be classified into several types based on their specific applications and characteristics. Some of the most common types of MOSFET gate drivers include single-channel drivers, half-bridge drivers, and full-bridge drivers.
Single-channel drivers are used to control a single MOSFET, while half-bridge and full-bridge drivers are used to control multiple MOSFETs in various configurations. MOSFET gate drivers typically include a level shifter, a buffer, and a gate driver circuit.
MOSFET gate drivers are critical components of electronic circuits, providing a way to control and drive the operation of MOSFETs. They are used in a wide range of applications, including motor control, power supplies, and inverters.