Part | RoHS | Manufacturer | Interface IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | Maximum Supply Voltage | No. of Functions | No. of Channels | Technology | Screening Level | No. of Bits | Maximum Supply Current | Output Latch/Register | Input Characteristics | Nominal Supply Voltage | Maximum Supply Voltage-1 | Power Supplies (V) | Nominal Negative Supply Voltage | Maximum Delay | Package Style (Meter) | Package Equivalence Code | Minimum Supply Voltage-1 | Sub-Category | Minimum Supply Voltage | Terminal Pitch | Maximum Operating Temperature | Nominal Supply Voltage-1 | Output Characteristics | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Width | Qualification | Output Polarity | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
VOLTAGE LEVEL TRANSLATOR |
AUTOMOTIVE |
NO LEAD |
12 |
VQCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
3.6 V |
1 |
AEC-Q100 |
4 |
.04 mA |
1.5 V |
CHIP CARRIER, VERY THIN PROFILE |
1.2 V |
.4 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
QUAD |
R-PQCC-N12 |
1 |
.55 mm |
1.7 mm |
ALSO REQUIRED 1.8V SUPPLY NOMINAL |
e4 |
30 |
260 |
2 mm |
||||||||||||||||
|
Texas Instruments |
VOLTAGE LEVEL TRANSLATOR |
INDUSTRIAL |
BALL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
3.6 V |
4 |
4 |
.01 mA |
1.5 V |
14.2 ns |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA12,3X4,20 |
1.2 V |
.5 mm |
85 Cel |
3-STATE |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B12 |
2 |
1 mm |
2 mm |
TRUE |
e1 |
30 |
260 |
2.5 mm |
||||||||||||||
|
Analog Devices |
VOLTAGE LEVEL TRANSLATOR |
INDUSTRIAL |
BALL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
4 |
BICMOS |
1 |
.3 mA |
LATCH |
1.8 V |
5.5 V |
1600 ns |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA12,3X4,20 |
1.65 V |
1.2 V |
.5 mm |
85 Cel |
3.3 V |
OPEN-DRAIN |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B12 |
1 |
.69 mm |
1.54 mm |
Not Qualified |
TRUE |
e1 |
30 |
260 |
2.02 mm |
||||||||
|
Onsemi |
TTL/CMOS TO CMOS TRANSLATOR |
INDUSTRIAL |
NO LEAD |
12 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
3.6 V |
1 |
4 |
.01 mA |
1.2/3.3 |
8.5 ns |
CHIP CARRIER, VERY THIN PROFILE |
LCC12,.07SQ,16 |
Other Interface ICs |
1.1 V |
.4 mm |
85 Cel |
3-STATE |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N12 |
1 |
.55 mm |
1.8 mm |
Not Qualified |
TRUE |
e4 |
30 |
260 |
1.8 mm |
||||||||||||
Texas Instruments |
VOLTAGE LEVEL TRANSLATOR |
INDUSTRIAL |
BALL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
3.6 V |
4 |
1 |
1.4 V |
1.2/3.6,1.8/5 |
13.7 ns |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA12,3X4,20 |
Other Interface ICs |
1.2 V |
.5 mm |
85 Cel |
3-STATE |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B12 |
1 |
.61 mm |
2 mm |
Not Qualified |
TRUE |
e0 |
240 |
2.5 mm |
||||||||||||||
|
Texas Instruments |
VOLTAGE LEVEL TRANSLATOR |
INDUSTRIAL |
BALL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
3.6 V |
1 |
1.4 V |
1.2/3.6,1.8/5 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA12,3X4,20 |
Other Interface ICs |
1.2 V |
.5 mm |
85 Cel |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B12 |
1 |
.61 mm |
2 mm |
Not Qualified |
e1 |
30 |
260 |
2.5 mm |
||||||||||||||||
|
Analog Devices |
VOLTAGE LEVEL TRANSLATOR |
INDUSTRIAL |
BALL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
4 |
BICMOS |
1 |
.3 mA |
LATCH |
1.8 V |
5.5 V |
1600 ns |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA12,3X4,20 |
1.65 V |
1.2 V |
.5 mm |
85 Cel |
3.3 V |
OPEN-DRAIN |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B12 |
1 |
.69 mm |
1.54 mm |
Not Qualified |
TRUE |
e1 |
30 |
260 |
2.02 mm |
||||||||
|
Analog Devices |
VOLTAGE LEVEL TRANSLATOR |
INDUSTRIAL |
BALL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
4 |
BICMOS |
1 |
.3 mA |
LATCH |
1.8 V |
5.5 V |
1600 ns |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA12,3X4,20 |
1.65 V |
1.2 V |
.5 mm |
85 Cel |
3.3 V |
OPEN-DRAIN |
-40 Cel |
BOTTOM |
R-PBGA-B12 |
1 |
.69 mm |
1.54 mm |
Not Qualified |
TRUE |
2.02 mm |
||||||||||||
|
Analog Devices |
VOLTAGE LEVEL TRANSLATOR |
INDUSTRIAL |
BALL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
4 |
BICMOS |
1 |
.3 mA |
LATCH |
1.8 V |
5.5 V |
1600 ns |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA12,3X4,20 |
1.65 V |
1.2 V |
.5 mm |
85 Cel |
3.3 V |
OPEN-DRAIN |
-40 Cel |
BOTTOM |
R-PBGA-B12 |
1 |
.69 mm |
1.54 mm |
Not Qualified |
TRUE |
2.02 mm |
||||||||||||
|
Analog Devices |
VOLTAGE LEVEL TRANSLATOR |
INDUSTRIAL |
BALL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
4 |
BICMOS |
1 |
.3 mA |
LATCH |
1.8 V |
5.5 V |
1600 ns |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA12,3X4,20 |
1.65 V |
1.2 V |
.5 mm |
85 Cel |
3.3 V |
OPEN-DRAIN |
-40 Cel |
BOTTOM |
R-PBGA-B12 |
1 |
.69 mm |
1.54 mm |
Not Qualified |
TRUE |
2.02 mm |
||||||||||||
NXP Semiconductors |
GTL TO TTL TRANSCEIVER |
INDUSTRIAL |
NO LEAD |
12 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
3.6 V |
1 |
4 |
NONE |
5.5 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1.8 V |
1 V |
.4 mm |
85 Cel |
OPEN-EMITTER |
-40 Cel |
DUAL |
R-PDSO-N12 |
.5 mm |
1.35 mm |
TRUE |
TOTEM OUTPUT CHARACTERISTIC ALSO POSSIBLE |
2.5 mm |
||||||||||||||||||||
|
NXP Semiconductors |
GTL TO TTL TRANSCEIVER |
INDUSTRIAL |
NO LEAD |
12 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
1 |
4 |
NONE |
3 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
0 V |
.4 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
DUAL |
R-PDSO-N12 |
.5 mm |
1.35 mm |
TRUE |
NOT SPECIFIED |
NOT SPECIFIED |
2.5 mm |
|||||||||||||||||||
|
NXP Semiconductors |
GTL TO TTL TRANSCEIVER |
INDUSTRIAL |
NO LEAD |
12 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
3.6 V |
1 |
4 |
NONE |
5.5 V |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
1.8 V |
1 V |
.4 mm |
85 Cel |
OPEN-EMITTER |
-40 Cel |
DUAL |
R-PDSO-N12 |
1 |
.5 mm |
1.35 mm |
Not Qualified |
TRUE |
TOTEM OUTPUT CHARACTERISTIC ALSO POSSIBLE |
2.5 mm |
|||||||||||||||||
|
Maxim Integrated |
VOLTAGE LEVEL TRANSLATOR |
INDUSTRIAL |
BALL |
12 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
5.5 V |
4 |
BICMOS |
1 |
.3 mA |
LATCH |
1.8 V |
5.5 V |
1600 ns |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA12,3X4,20 |
1.65 V |
1.2 V |
.5 mm |
85 Cel |
3.3 V |
OPEN-DRAIN |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B12 |
1 |
.69 mm |
1.54 mm |
Not Qualified |
TRUE |
e1 |
30 |
260 |
2.02 mm |
Voltage level translators are electronic components used to convert voltage levels between different devices in electronic systems. They are used to ensure that signals are compatible and can be correctly interpreted. Voltage level translators are essential components in electronic systems that require the exchange of data and signals between different components.
Voltage level translators can be classified into several types based on their specific characteristics and applications. The most common types of voltage level translators include unidirectional and bidirectional translators.
Unidirectional voltage level translators convert signals in one direction, typically from a low voltage to a higher voltage. They are commonly used in applications where data is transmitted from a low-power device to a higher-power device. Bidirectional voltage level translators can convert signals in both directions and are commonly used in applications where data is transmitted bidirectionally between two devices.
Voltage level translators are typically characterized by their voltage range, speed, power consumption, and compatibility with different voltage levels. They are commonly used in various electronic systems, such as communications, industrial automation, and automotive electronics.