Part | RoHS | Manufacturer | Logic IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Schmitt Trigger | Surface Mount | No. of Functions | Technology | Screening Level | No. of Inputs | No. of Bits | Translation | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Load Capacitance (CL) | Package Style (Meter) | Package Equivalence Code | Propagation Delay (tpd) | Maximum I (ol) | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Minimum Operating Temperature | Terminal Finish | Terminal Position | Control Type | Minimum fmax | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Output Polarity | Minimum Supply Voltage (Vsup) | Maximum Power Supply Current (ICC) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Family |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
INVERTER |
AUTOMOTIVE |
GULL WING |
8 |
TSSOP |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP8,.16 |
8.2 ns |
24 Amp |
Gates |
.65 mm |
125 Cel |
OPEN-DRAIN |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-G8 |
1 |
5.5 V |
1.1 mm |
3 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
3 mm |
LVC/LCX/Z |
||||||||||
|
NXP Semiconductors |
INVERTER |
AUTOMOTIVE |
GULL WING |
14 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
YES |
6 |
CMOS |
1 |
TR |
5 |
5 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP14,.25 |
10 ns |
8 Amp |
Gates |
.65 mm |
125 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G14 |
1 |
5.5 V |
1.1 mm |
4.4 mm |
Not Qualified |
4.5 V |
e3 |
30 |
260 |
5 mm |
AHCT/VHCT/VT |
|||||||||||
Toshiba |
INVERTER |
|||||||||||||||||||||||||||||||||||||||||||||||||
Texas Instruments |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
YES |
NO |
6 |
CMOS |
1 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
57 ns |
5.2 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-GDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
.02 mA |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
19.43 mm |
HCT |
||||||||||||
Texas Instruments |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
6 |
TTL |
1 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
33 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
21 mA |
NOT SPECIFIED |
NOT SPECIFIED |
19.18 mm |
LS |
|||||||||||||||
Motorola |
INVERTER |
COMMERCIAL EXTENDED |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
6 |
1 |
5 |
IN-LINE |
30 ns |
75 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
5.5 V |
Not Qualified |
4.5 V |
e0 |
MC83 |
|||||||||||||||||||||||||||
National Semiconductor |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
4.5/12.5 |
IN-LINE |
DIP16,.3 |
Gates |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T16 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Philips Semiconductors |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
6 |
CMOS |
1 |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
190 ns |
4 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
6 V |
Not Qualified |
2 V |
e0 |
||||||||||||||||||||
Toshiba |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
CMOS |
1 |
TUBE |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
110 ns |
.61 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T14 |
18 V |
4.45 mm |
7.62 mm |
Not Qualified |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
19.25 mm |
4000/14000/40000 |
|||||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
YES |
6 |
CMOS |
1 |
TR |
5 |
2/6 |
50 pF |
SMALL OUTLINE |
SOP14,.3 |
155 ns |
4 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G14 |
1 |
6 V |
1.9 mm |
5.3 mm |
Not Qualified |
2 V |
40 |
260 |
10.3 mm |
HC/UH |
|||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
6 |
CMOS |
1 |
5 |
2/6 |
50 pF |
SMALL OUTLINE |
SOP14,.3 |
75 ns |
5.2 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G14 |
6 V |
1.9 mm |
5.3 mm |
Not Qualified |
2 V |
50 mA |
NOT SPECIFIED |
NOT SPECIFIED |
10.3 mm |
HC/UH |
||||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
YES |
6 |
CMOS |
1 |
2.7 |
3.3 |
50 pF |
SMALL OUTLINE |
SOP14,.25 |
23 ns |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G14 |
3.6 V |
1.75 mm |
3.9 mm |
Not Qualified |
2 V |
NOT AVAILABLE IN JAPAN |
NOT SPECIFIED |
NOT SPECIFIED |
8.65 mm |
LV/LV-A/LVX/H |
|||||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
5 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
1 |
TR |
5 |
2/6 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP5/6,.08 |
125 ns |
2 Amp |
Gates |
.65 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G5 |
6 V |
1.1 mm |
1.25 mm |
Not Qualified |
2 V |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
2 mm |
HC/UH |
||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
5 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
1 |
5 |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
235 ns |
.95 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G5 |
6 V |
1.4 mm |
1.6 mm |
2 V |
NOT SPECIFIED |
NOT SPECIFIED |
2.9 mm |
HC/UH |
||||||||||||||||||||||
|
Toshiba |
INVERTER |
AUTOMOTIVE |
GULL WING |
5 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
1 |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
14.5 ns |
.65 mm |
125 Cel |
-40 Cel |
DUAL |
R-PDSO-G5 |
5.5 V |
1.1 mm |
1.25 mm |
2 V |
30 |
260 |
2 mm |
AHC/VHC/H/U/V |
|||||||||||||||||||||
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
5 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
1 |
5 |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
125 ns |
.95 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G5 |
6 V |
1.4 mm |
1.6 mm |
2 V |
2.9 mm |
HC/UH |
|||||||||||||||||||||||||
|
NXP Semiconductors |
INVERTER |
AUTOMOTIVE |
NO LEAD |
8 |
VSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
YES |
3 |
CMOS |
1 |
TR |
5 |
2/5.5 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC8,.04,20 |
20.5 ns |
4 Amp |
Gates |
.5 mm |
125 Cel |
-40 Cel |
TIN |
DUAL |
R-PDSO-N8 |
1 |
5.5 V |
.5 mm |
1 mm |
Not Qualified |
2 V |
e3 |
30 |
260 |
1.95 mm |
LV/LV-A/LVX/H |
|||||||||||
Texas Instruments |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
6 |
TTL |
MIL-STD-883 |
1 |
5 |
IN-LINE |
13 ns |
2.54 mm |
125 Cel |
3-STATE |
-55 Cel |
DUAL |
R-GDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
4.5 V |
4000V ESD PROTECTION |
19.939 mm |
F/FAST |
||||||||||||||||||||||
Texas Instruments |
INVERTER |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
YES |
6 |
TTL |
MIL-STD-883 |
1 |
5 |
FLATPACK |
13 ns |
1.27 mm |
125 Cel |
3-STATE |
-55 Cel |
DUAL |
R-GDFP-F14 |
5.5 V |
2.032 mm |
6.2865 mm |
4.5 V |
4000V ESD PROTECTION |
9.779 mm |
F/FAST |
||||||||||||||||||||||
Motorola |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
YES |
NO |
6 |
CMOS |
38535Q/M;38534H;883B |
1 |
5 |
2/6 |
IN-LINE |
DIP14,.3 |
145 ns |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
6 V |
Not Qualified |
2 V |
e0 |
|||||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
FLAT |
16 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
6 |
CMOS |
MIL-PRF-38535 Class V |
1 |
5 |
FLATPACK |
162 ns |
1.27 mm |
125 Cel |
-55 Cel |
GOLD |
DUAL |
R-CDFP-F16 |
18 V |
2.92 mm |
6.73 mm |
Qualified |
3 V |
RADIATION HARDENED; WITH EXTENDED INPUT VOLTAGE; IOL = 2.4MA @ VOL = 0.4V; IOH = 1.55MA @ VOH = 2.5V |
e4 |
4000/14000/40000 |
||||||||||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6 |
CMOS |
1 |
3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
20 ns |
.65 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G14 |
3.6 V |
1.2 mm |
4.4 mm |
1.65 V |
30 |
260 |
5 mm |
LVC/LCX/Z |
||||||||||||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
20 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
9 |
CMOS |
1 |
5 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
18.4 ns |
.65 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G20 |
5.5 V |
1.2 mm |
4.4 mm |
2 V |
NOT SPECIFIED |
NOT SPECIFIED |
6.5 mm |
AHC/VHC/H/U/V |
||||||||||||||||||||||
|
Onsemi |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
6 |
CMOS |
1 |
RAIL |
5 |
5 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP14,.25 |
8.5 ns |
8 Amp |
Gates |
.65 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G14 |
1 |
5.5 V |
1.2 mm |
4.4 mm |
Not Qualified |
4.5 V |
e4 |
30 |
260 |
5 mm |
AHCT/VHCT |
|||||||||||
National Semiconductor |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
CMOS |
1 |
5/15 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
Not Qualified |
e0 |
4000/14000/40000 |
|||||||||||||||||||||||||
National Semiconductor |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6 |
CMOS |
1 |
5 |
50 pF |
SMALL OUTLINE |
90 ns |
1.27 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G14 |
15 V |
1.75 mm |
3.9 mm |
Not Qualified |
3 V |
8.65 mm |
4000/14000/40000 |
|||||||||||||||||||||||
Texas Instruments |
INVERTER |
COMMERCIAL |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
6 |
TTL |
1 |
5 |
SMALL OUTLINE |
23 ns |
1.27 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
DUAL |
5.25 V |
1.753 mm |
3.9 mm |
4.75 V |
8.62 mm |
TTL/H/L |
|||||||||||||||||||||||||||
National Semiconductor |
INVERTER |
COMMERCIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
6 |
TTL |
1 |
TR |
5 |
5 |
50 pF |
SMALL OUTLINE |
SOP14,.25 |
14 ns |
Gates |
1.27 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G14 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
4.5 V |
4.2 mA |
e0 |
8.65 mm |
ALS |
||||||||||||||
National Semiconductor |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
TTL |
5 |
5 |
IN-LINE |
DIP14,.3 |
3.6 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
Not Qualified |
3.06 mA |
e0 |
|||||||||||||||||||||||||
National Semiconductor |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
4 |
TTL |
2 |
4 |
5 |
IN-LINE |
DIP14,.3 |
18 ns |
Bus Driver/Transceivers |
2.54 mm |
70 Cel |
3-STATE |
0 Cel |
TIN LEAD |
DUAL |
ENABLE HIGH |
R-PDIP-T14 |
5.08 mm |
7.62 mm |
Not Qualified |
TRUE |
e0 |
19.177 mm |
8094 |
||||||||||||||||||
Samsung |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Samsung |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
Not Qualified |
e0 |
||||||||||||||||||||||||
National Semiconductor |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
6 |
TTL |
MIL-PRF-38535 Class B |
1 |
5 |
5 |
IN-LINE |
DIP14,.3 |
55 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
5.5 V |
Not Qualified |
4.5 V |
6.6 mA |
e0 |
LS |
|||||||||||||||||
Motorola |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
6 |
CMOS |
1 |
5 |
50 pF |
IN-LINE |
125 ns |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
e0 |
19.495 mm |
4000/14000/40000 |
|||||||||||||||||||||
Motorola |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
6 |
CMOS |
1 |
5 |
50 pF |
IN-LINE |
125 ns |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
e0 |
19.495 mm |
4000/14000/40000 |
|||||||||||||||||||||
Motorola |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
6 |
CMOS |
1 |
5 |
50 pF |
IN-LINE |
250 ns |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
e0 |
19.495 mm |
4000/14000/40000 |
|||||||||||||||||||||
Motorola |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
DTL |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||
Motorola |
INVERTER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
6 |
CMOS |
1 |
5 |
2/6 |
50 pF |
IN-LINE |
DIP16,.3 |
26 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T16 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
CMOS-TTL LEVEL TRANSLATOR |
e0 |
19.495 mm |
HC/UH |
|||||||||||||||
Motorola |
INVERTER |
OTHER |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
70 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||
National Semiconductor |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
CMOS |
1 |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
29 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
6 V |
4.69 mm |
7.62 mm |
Not Qualified |
2 V |
e0 |
18.86 mm |
HC/UH |
||||||||||||||||
National Semiconductor |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
YES |
NO |
CMOS |
38535Q/M;38534H;883B |
5 |
3/15 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
15 V |
Not Qualified |
3 V |
e0 |
||||||||||||||||||||||||
|
Onsemi |
INVERTER |
INDUSTRIAL |
GULL WING |
5 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
1 |
TR |
1.1 |
1.2/3.3 |
30 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP5/6,.08 |
46.3 ns |
.5 Amp |
Gates |
.65 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G5 |
1 |
3.6 V |
1.1 mm |
1.25 mm |
Not Qualified |
.9 V |
e4 |
30 |
260 |
2 mm |
P |
|||||||||||
|
Fairchild Semiconductor |
INVERTER |
INDUSTRIAL |
GULL WING |
5 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
1 |
TR |
5 |
5 |
50 pF |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
TSOP5/6,.11,37 |
31 ns |
2 Amp |
Gates |
.95 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G5 |
1 |
5.5 V |
1.4 mm |
1.6 mm |
Not Qualified |
4.5 V |
e3 |
2.9 mm |
HST/T |
|||||||||||||
|
Fairchild Semiconductor |
INVERTER |
INDUSTRIAL |
GULL WING |
5 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
1 |
TR |
3 |
2/6 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP5/6,.08 |
125 ns |
Gates |
.65 mm |
85 Cel |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G5 |
1 |
6 V |
1.1 mm |
1.25 mm |
Not Qualified |
2 V |
e3 |
2 mm |
AHC |
||||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
6 |
CMOS |
1 |
5 |
IN-LINE |
120 ns |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T16 |
18 V |
4.45 mm |
7.62 mm |
3 V |
30 |
260 |
19.25 mm |
4000/14000/40000 |
||||||||||||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
6 |
CMOS |
1 |
TR |
5 |
5/15 |
50 pF |
SMALL OUTLINE |
SOP14,.3 |
110 ns |
.61 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G14 |
18 V |
Not Qualified |
3 V |
30 |
260 |
||||||||||||||||||
Toshiba |
INVERTER |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
6 |
CMOS |
1 |
5 |
50 pF |
SMALL OUTLINE |
SOP14,.3 |
110 ns |
.61 Amp |
1.27 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G14 |
18 V |
1.9 mm |
5.3 mm |
3 V |
10.3 mm |
4000/14000/40000 |
||||||||||||||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
GULL WING |
5 |
LSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
YES |
1 |
CMOS |
1 |
5 |
5/15 |
50 pF |
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH |
TSOP5/6,.11,37 |
340 ns |
2.8 Amp |
Gates |
.95 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G5 |
1 |
18 V |
1.5 mm |
1.6 mm |
Not Qualified |
3 V |
10 |
260 |
2.9 mm |
4000/14000/40000 |
Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.
Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.
Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.
Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.
Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.
Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.