Part | RoHS | Manufacturer | Logic IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Schmitt Trigger | Surface Mount | No. of Functions | Technology | Screening Level | No. of Inputs | No. of Bits | Translation | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Load Capacitance (CL) | Package Style (Meter) | Package Equivalence Code | Propagation Delay (tpd) | Maximum I (ol) | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Minimum Operating Temperature | Terminal Finish | Terminal Position | Control Type | Minimum fmax | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Output Polarity | Minimum Supply Voltage (Vsup) | Maximum Power Supply Current (ICC) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Family |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER |
LCC8,.06SQ,20 |
13.1 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
1.6 mm |
LVC/LCX/Z |
||||||||||||||
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER |
LCC8,.06SQ,20 |
13.1 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
|||||||||||
|
Onsemi |
INVERTER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER |
LCC8,.06SQ,20 |
13 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
|||||||||||
|
Texas Instruments |
INVERTER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.2 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
25.5 ns |
4 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
QUAD |
S-PQCC-N8 |
1 |
3.6 V |
.6 mm |
1.5 mm |
Not Qualified |
.8 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1.5 mm |
AUP/ULP/V |
||||||||||
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER |
LCC8,.06SQ,20 |
8.8 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
|||||||||||
|
Onsemi |
NAND GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
9.8 ns |
32 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
100 mA |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
||||||||||
|
NXP Semiconductors |
NAND GATE |
AUTOMOTIVE |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
2 |
CMOS |
2 |
TR |
1.1 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
27.9 ns |
1.7 Amp |
Gates |
.5 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
QUAD |
S-PQCC-N8 |
1 |
3.6 V |
.5 mm |
1.6 mm |
Not Qualified |
.8 V |
e4 |
30 |
260 |
1.6 mm |
AUP/ULP/V |
|||||||||||
|
Onsemi |
INVERTER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
10 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
|||||||||||
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER |
LCC8,.06SQ,20 |
8.8 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
1.6 mm |
LVC/LCX/Z |
||||||||||||||
|
Onsemi |
NAND GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
9.6 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
||||||||||
NXP Semiconductors |
AND GATE |
AUTOMOTIVE |
NO LEAD |
14 |
VQCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
4 |
CMOS |
AEC-Q100 |
2 |
3.3 |
CHIP CARRIER, VERY THIN PROFILE |
10.4 ns |
.5 mm |
125 Cel |
-40 Cel |
QUAD |
R-PQCC-N14 |
3.6 V |
1 mm |
2.5 mm |
1.65 V |
3 mm |
LVC/LCX/Z |
||||||||||||||||||||||||
|
Texas Instruments |
INVERTER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
3 |
CMOS |
1 |
N/A |
TR |
1.2 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
19.3 ns |
4 Amp |
Gates |
.5 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
QUAD |
S-XQCC-N8 |
1 |
3.6 V |
.6 mm |
1.5 mm |
Not Qualified |
.8 V |
.01 mA |
e4 |
30 |
260 |
1.5 mm |
AUP/ULP/V |
||||||||
|
Texas Instruments |
OR GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.2 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
25.5 ns |
4 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
QUAD |
S-PQCC-N8 |
1 |
3.6 V |
.6 mm |
1.5 mm |
Not Qualified |
.8 V |
.0009 mA |
e4 |
NOT SPECIFIED |
260 |
1.5 mm |
AUP/ULP/V |
||||||||||
|
Texas Instruments |
NAND GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.2 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
27 ns |
4 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
QUAD |
S-PQCC-N8 |
1 |
3.6 V |
.6 mm |
1.5 mm |
Not Qualified |
.8 V |
.0009 mA |
e4 |
NOT SPECIFIED |
260 |
1.5 mm |
AUP/ULP/V |
||||||||||
|
Texas Instruments |
NOR GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.2 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
25.5 ns |
4 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
QUAD |
S-PQCC-N8 |
1 |
3.6 V |
.6 mm |
1.5 mm |
Not Qualified |
.8 V |
.0009 mA |
e4 |
30 |
260 |
1.5 mm |
AUP/ULP/V |
||||||||||
|
Texas Instruments |
BUFFER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
3 |
CMOS |
1 |
TR |
1.2 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
25.5 ns |
4 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
QUAD |
S-PQCC-N8 |
1 |
3.6 V |
.6 mm |
1.5 mm |
Not Qualified |
.8 V |
.0009 mA |
e4 |
30 |
260 |
1.5 mm |
AUP/ULP/V |
||||||||||
|
Onsemi |
XOR GATE |
AUTOMOTIVE |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
10.5 ns |
24 Amp |
Gates |
.5 mm |
125 Cel |
-40 Cel |
NICKEL GOLD PALLADIUM |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.6 mm |
1.6 mm |
Not Qualified |
1.65 V |
30 |
260 |
1.6 mm |
2G |
||||||||||||
|
Onsemi |
AND GATE |
MILITARY |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
5 |
1.8/5 |
15 pF |
CHIP CARRIER |
LCC8,.06SQ,20 |
10.5 ns |
8 Amp |
Gates |
.5 mm |
125 Cel |
-55 Cel |
NICKEL GOLD PALLADIUM |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.6 mm |
1.6 mm |
Not Qualified |
1.65 V |
30 |
260 |
1.6 mm |
2G |
||||||||||||
|
Onsemi |
NAND GATE |
MILITARY |
NO LEAD |
8 |
VQCCN |
RECTANGULAR |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
2.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.05X.06,16 |
11 ns |
32 Amp |
.4 mm |
125 Cel |
-55 Cel |
QUAD |
R-XQCC-N8 |
5.5 V |
.55 mm |
1.2 mm |
1.65 V |
100 mA |
NOT SPECIFIED |
NOT SPECIFIED |
1.4 mm |
27WZ |
||||||||||||||||
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
6 |
VQCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
2 |
CMOS |
1 |
1.2 |
CHIP CARRIER, VERY THIN PROFILE |
17.9 ns |
.5 mm |
85 Cel |
-40 Cel |
BOTTOM |
R-XBCC-N6 |
3.6 V |
.55 mm |
1 mm |
.9 V |
1.45 mm |
AUP/ULP/V |
|||||||||||||||||||||||||
|
Onsemi |
AND GATE |
MILITARY |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
2.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
11 ns |
32 Amp |
.5 mm |
125 Cel |
-55 Cel |
QUAD |
S-PQCC-N8 |
1 |
5.5 V |
.6 mm |
1.6 mm |
1.65 V |
100 mA |
NOT SPECIFIED |
260 |
1.6 mm |
LVC/LCX/Z |
|||||||||||||||
|
Onsemi |
OR GATE |
MILITARY |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
2.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
10.5 ns |
32 Amp |
.5 mm |
125 Cel |
-55 Cel |
QUAD |
S-PQCC-N8 |
5.5 V |
.6 mm |
1.6 mm |
1.65 V |
100 mA |
NOT SPECIFIED |
NOT SPECIFIED |
1.6 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
AND GATE |
MILITARY |
NO LEAD |
8 |
VQCCN |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
2.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.05X.06,16 |
11 ns |
32 Amp |
.4 mm |
125 Cel |
-55 Cel |
QUAD |
R-PQCC-N8 |
5.5 V |
.55 mm |
1.2 mm |
1.65 V |
100 mA |
NOT SPECIFIED |
NOT SPECIFIED |
1.4 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
NOR GATE |
MILITARY |
NO LEAD |
8 |
VQCCN |
RECTANGULAR |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
2.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.05X.06,16 |
9.7 ns |
32 Amp |
.4 mm |
125 Cel |
-55 Cel |
QUAD |
S-XQCC-N8 |
5.5 V |
.55 mm |
1.2 mm |
1.65 V |
100 mA |
NOT SPECIFIED |
NOT SPECIFIED |
1.4 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
NAND GATE |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
2.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
11 ns |
32 Amp |
.5 mm |
125 Cel |
-55 Cel |
QUAD |
S-XQCC-N8 |
5.5 V |
.6 mm |
1.6 mm |
1.65 V |
100 mA |
1.6 mm |
27WZ |
|||||||||||||||||||
|
Onsemi |
BUFFER |
AUTOMOTIVE |
NO LEAD |
8 |
VQCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.85 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.05X.06,16 |
9.2 ns |
32 Amp |
.4 mm |
125 Cel |
-55 Cel |
QUAD |
R-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.2 mm |
1.65 V |
100 mA |
10 |
260 |
1.4 mm |
37WZ |
|||||||||||||||
|
Onsemi |
AND GATE |
MILITARY |
NO LEAD |
8 |
VQCCN |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.05X.06,16 |
11 ns |
24 Amp |
.4 mm |
125 Cel |
-55 Cel |
QUAD |
R-PQCC-N8 |
5.5 V |
.55 mm |
1.2 mm |
1.65 V |
.01 mA |
NOT SPECIFIED |
NOT SPECIFIED |
1.4 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
OR GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.2 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
43 ns |
.5 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
3.6 V |
.55 mm |
1.6 mm |
Not Qualified |
.9 V |
e4 |
30 |
260 |
1.6 mm |
P |
|||||||||||
|
Onsemi |
NAND GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
13.5 ns |
32 Amp |
Gates |
.5 mm |
85 Cel |
3-STATE |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
100 mA |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
|||||||||
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
3 |
CMOS |
1 |
TR |
1.2 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
46.3 ns |
.5 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
3.6 V |
.55 mm |
1.6 mm |
Not Qualified |
.9 V |
e4 |
30 |
260 |
1.6 mm |
P |
|||||||||||
|
Onsemi |
OR GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
11 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
|||||||||||
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
6 |
VQCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
2 |
CMOS |
1 |
1.2 |
CHIP CARRIER, VERY THIN PROFILE |
17.9 ns |
.5 mm |
85 Cel |
-40 Cel |
BOTTOM |
R-XBCC-N6 |
3.6 V |
.55 mm |
1 mm |
.9 V |
1.45 mm |
AUP/ULP/V |
|||||||||||||||||||||||||
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
6 |
VQCCN |
RECTANGULAR |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
1 |
TR |
1.2 |
1.2/3.3 |
15 pF |
CHIP CARRIER, VERY THIN PROFILE |
SOLCC6,.04,20 |
17.9 ns |
4 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
GOLD NICKEL |
BOTTOM |
R-XBCC-N6 |
1 |
3.6 V |
.55 mm |
1 mm |
Not Qualified |
.9 V |
e4 |
30 |
260 |
1.45 mm |
AUP/ULP/V |
|||||||||||
|
Onsemi |
NOR GATE |
INDUSTRIAL |
NO LEAD |
6 |
VQCCN |
RECTANGULAR |
UNSPECIFIED |
NO |
YES |
1 |
CMOS |
3 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
SOLCC6,.04,20 |
19 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD SILVER |
QUAD |
R-XQCC-N6 |
1 |
5.5 V |
.55 mm |
1 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
1.45 mm |
LVC/LCX/Z |
|||||||||||
|
Onsemi |
INVERTER |
MILITARY |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
3 |
CMOS |
1 |
TR |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
7.2 ns |
24 Amp |
.5 mm |
125 Cel |
OPEN-DRAIN |
-55 Cel |
DUAL |
S-PQCC-N8 |
1 |
5.5 V |
.6 mm |
1.6 mm |
1.65 V |
.01 mA |
1.6 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
INVERTER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.2 |
1.2/3.3 |
30 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
46.3 ns |
.5 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
3.6 V |
.55 mm |
1.6 mm |
Not Qualified |
.9 V |
e4 |
30 |
260 |
1.6 mm |
P |
|||||||||||
|
Onsemi |
NOR GATE |
MILITARY |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
2.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
9.7 ns |
32 Amp |
.5 mm |
125 Cel |
-55 Cel |
QUAD |
S-XQCC-N8 |
5.5 V |
.6 mm |
1.6 mm |
1.65 V |
100 mA |
NOT SPECIFIED |
NOT SPECIFIED |
1.6 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
INVERTER |
MILITARY |
NO LEAD |
8 |
VQCCN |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
3 |
CMOS |
1 |
TR |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.05X.06,16 |
7.2 ns |
24 Amp |
.4 mm |
125 Cel |
OPEN-DRAIN |
-55 Cel |
DUAL |
R-PQCC-N8 |
1 |
5.5 V |
.55 mm |
1.2 mm |
1.65 V |
.01 mA |
1.4 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
AND GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
11 ns |
32 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
100 mA |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
||||||||||
|
Onsemi |
BUFFER |
AUTOMOTIVE |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.85 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
9.2 ns |
32 Amp |
.5 mm |
125 Cel |
-55 Cel |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.6 mm |
1.6 mm |
1.65 V |
100 mA |
10 |
260 |
1.6 mm |
37WZ |
|||||||||||||||
|
Onsemi |
INVERTER |
MILITARY |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
3 |
CMOS |
1 |
TR |
2.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
10 ns |
24 Amp |
.5 mm |
125 Cel |
-55 Cel |
DUAL |
S-PQCC-N8 |
1 |
5.5 V |
.6 mm |
1.6 mm |
1.65 V |
.01 mA |
10 |
260 |
1.6 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
XOR GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
2 |
CMOS |
2 |
1.2 |
CHIP CARRIER, VERY THIN PROFILE |
45 ns |
.5 mm |
85 Cel |
-40 Cel |
QUAD |
S-XQCC-N8 |
3.6 V |
.55 mm |
1.6 mm |
.9 V |
NOT SPECIFIED |
NOT SPECIFIED |
1.6 mm |
P |
||||||||||||||||||||||
|
Onsemi |
NAND GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
9.8 ns |
24 Amp |
.5 mm |
85 Cel |
-40 Cel |
QUAD |
S-PQCC-N8 |
5.5 V |
.55 mm |
1.6 mm |
1.65 V |
.01 mA |
NOT SPECIFIED |
NOT SPECIFIED |
1.6 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
XOR GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
13 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
|||||||||||
|
Onsemi |
INVERTER |
MILITARY |
NO LEAD |
8 |
VQCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
3 |
CMOS |
1 |
TR |
2.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.05X.06,16 |
10 ns |
24 Amp |
.4 mm |
125 Cel |
-55 Cel |
DUAL |
R-PQCC-N8 |
1 |
5.5 V |
.55 mm |
1.2 mm |
1.65 V |
.01 mA |
10 |
260 |
1.4 mm |
LVC/LCX/Z |
||||||||||||||||
|
Onsemi |
XOR GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
13 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
1.6 mm |
LVC/LCX/Z |
||||||||||||||
|
Onsemi |
INVERTER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
10 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
1.6 mm |
LVC/LCX/Z |
||||||||||||||
|
Onsemi |
OR GATE |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, VERY THIN PROFILE |
LCC8,.06SQ,20 |
11 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
1.6 mm |
LVC/LCX/Z |
Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.
Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.
Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.
Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.
Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.
Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.