NO LEAD Logic Gates 2,400+

Reset All
Part RoHS Manufacturer Logic IC Type Temperature Grade Terminal Form No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Schmitt Trigger Surface Mount No. of Functions Technology Screening Level No. of Inputs No. of Bits Translation Packing Method Nominal Supply Voltage / Vsup (V) Power Supplies (V) Load Capacitance (CL) Package Style (Meter) Package Equivalence Code Propagation Delay (tpd) Maximum I (ol) Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Minimum Operating Temperature Terminal Finish Terminal Position Control Type Minimum fmax JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Output Polarity Minimum Supply Voltage (Vsup) Maximum Power Supply Current (ICC) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Length Family

SN74LVC1G32QDRYRQ1

Texas Instruments

OR GATE

AUTOMOTIVE

NO LEAD

6

SON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

2

1.8

SMALL OUTLINE

9 ns

32 Amp

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-N6

1

5.5 V

1.65 V

e4

30

260

LVC/LCX/Z

SN74LVC1G58DSFR

Texas Instruments

LOGIC CIRCUIT

AUTOMOTIVE

NO LEAD

6

VSON

SQUARE

PLASTIC/EPOXY

YES

YES

1

CMOS

3

TR

3.3

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,14

16.4 ns

32 Amp

Gates

.35 mm

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

S-PDSO-N6

1

5.5 V

.4 mm

1 mm

Not Qualified

1.65 V

.01 mA

e4

NOT SPECIFIED

260

1 mm

LVC/LCX/Z

SN74LVC86ARGYR

Texas Instruments

XOR GATE

AUTOMOTIVE

NO LEAD

14

HVQCCN

SQUARE

PLASTIC/EPOXY

NO

YES

4

CMOS

2

TR

1.8

3.3

50 pF

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC14/18,.14SQ,20

9.9 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

QUAD

S-PQCC-N14

2

3.6 V

1 mm

3.5 mm

Not Qualified

1.65 V

.01 mA

e4

NOT SPECIFIED

260

3.5 mm

LVC/LCX/Z

74AUP1G07GX,125

NXP Semiconductors

BUFFER

AUTOMOTIVE

NO LEAD

5

SON

SQUARE

PLASTIC/EPOXY

NO

YES

1

CMOS

1

TR

1.1

1.2/3.3

30 pF

SMALL OUTLINE

LCC5(UNSPEC)

20.7 ns

1.7 Amp

Gates

.48 mm

125 Cel

OPEN-DRAIN

-40 Cel

TIN

DUAL

S-PDSO-N5

1

3.6 V

.35 mm

.8 mm

Not Qualified

.8 V

e3

30

260

.8 mm

AUP/ULP/V

74AUP1G08FZ4-7

Diodes Incorporated

AND GATE

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

2

3

SMALL OUTLINE, VERY THIN PROFILE

24 ns

.5 mm

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-N6

1

3.6 V

.4 mm

1 mm

.8 V

e4

30

260

1.4 mm

AUP/ULP/V

74AUP1G09FZ4-7

Diodes Incorporated

AND GATE

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

2

3

SMALL OUTLINE, VERY THIN PROFILE

24 ns

.5 mm

125 Cel

OPEN-DRAIN

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-N6

1

3.6 V

.4 mm

1 mm

.8 V

e4

30

260

1.4 mm

AUP/ULP/V

74AUP1G17FW5-7

Diodes Incorporated

BUFFER

AUTOMOTIVE

NO LEAD

6

VSON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

1

1.2

SMALL OUTLINE, VERY THIN PROFILE

20.1 ns

.35 mm

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

S-PDSO-N6

3.6 V

.5 mm

1 mm

.8 V

e4

260

1 mm

AUP/ULP/V

74AUP1T34GM,115

NXP Semiconductors

BUFFER

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

2

CMOS

1

TR

1.2

1.2/3.3

30 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

33.5 ns

1.7 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

3.6 V

.5 mm

1 mm

Not Qualified

1.1 V

e3

30

260

1.45 mm

AUP/ULP/V

74AUP2G132GF

NXP Semiconductors

NAND GATE

AUTOMOTIVE

NO LEAD

8

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

2

CMOS

2

1.1

SMALL OUTLINE, VERY THIN PROFILE

27.9 ns

.35 mm

125 Cel

-40 Cel

TIN

DUAL

R-PDSO-N8

1

3.6 V

.5 mm

1 mm

Not Qualified

.8 V

e3

1.35 mm

AUP/ULP/V

74LVC08ABQ,115

NXP Semiconductors

AND GATE

AUTOMOTIVE

NO LEAD

14

HVQCCN

RECTANGULAR

PLASTIC/EPOXY

NO

YES

4

CMOS

2

TR

2.7

3.3

50 pF

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC14,.1X.12,20

9 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

QUAD

R-PQCC-N14

1

3.6 V

1 mm

2.5 mm

Not Qualified

1.2 V

e4

30

260

3 mm

LVC/LCX/Z

74LVC08ABQ-Q100,11

NXP Semiconductors

AND GATE

AUTOMOTIVE

NO LEAD

14

HVQCCN

RECTANGULAR

PLASTIC/EPOXY

NO

YES

4

CMOS

AEC-Q100

2

TR

3.3

3.3

50 pF

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC14,.1X.12,20

10.4 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

QUAD

R-PQCC-N14

3.6 V

1 mm

2.5 mm

Not Qualified

1.65 V

3 mm

LVC/LCX/Z

74LVC08ABQ-Q100,115

NXP Semiconductors

AND GATE

AUTOMOTIVE

NO LEAD

14

VQCCN

RECTANGULAR

PLASTIC/EPOXY

YES

4

CMOS

AEC-Q100

2

3.3

CHIP CARRIER, VERY THIN PROFILE

10.4 ns

.5 mm

125 Cel

-40 Cel

QUAD

R-PQCC-N14

3.6 V

1 mm

2.5 mm

1.65 V

3 mm

LVC/LCX/Z

74LVC1G00GM,132

NXP Semiconductors

NAND GATE

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

1

CMOS

2

TR

1.8

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

10.5 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

5.5 V

.5 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.45 mm

LVC/LCX/Z

74LVC1G08FW4-7

Diodes Incorporated

AND GATE

AUTOMOTIVE

NO LEAD

6

VSON

SQUARE

PLASTIC/EPOXY

NO

YES

1

CMOS

2

TR

1.8

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,14

10.5 ns

24 Amp

Gates

.35 mm

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

S-PDSO-N6

1

5.5 V

.4 mm

1 mm

Not Qualified

1.65 V

e4

30

260

1 mm

LVC/LCX/Z

74LVC1G14GM,132

NXP Semiconductors

INVERTER

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

YES

1

CMOS

1

TR

1.8

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

14 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

5.5 V

.5 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.45 mm

LVC/LCX/Z

NC7S04L6X-L22175

Onsemi

INVERTER

NO LEAD

6

VSON

RECTANGULAR

UNSPECIFIED

NO

YES

1

CMOS

1

TR

3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

125 ns

2.6 Amp

.5 mm

85 Cel

-40 Cel

DUAL

R-XDSO-N6

6 V

.55 mm

1 mm

2 V

25 mA

1.45 mm

HC

NC7SV17FHX

Onsemi

BUFFER

INDUSTRIAL

NO LEAD

6

VSON

SQUARE

PLASTIC/EPOXY

YES

YES

1

CMOS

1

TR

1.1

1.2/3.3

15 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,14

14.9 ns

2 Amp

Gates

.35 mm

85 Cel

-40 Cel

NICKEL PALLADIUM

DUAL

S-PDSO-N6

1

3.6 V

.55 mm

1 mm

Not Qualified

.9 V

e4

30

260

1 mm

AUP/ULP/V

NC7SV17L6X

Onsemi

BUFFER

INDUSTRIAL

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

YES

1

CMOS

1

TR

1.1

1.2/3.3

15 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

14.9 ns

2 Amp

Gates

.5 mm

85 Cel

-40 Cel

GOLD NICKEL

DUAL

R-PDSO-N6

1

3.6 V

.55 mm

1 mm

Not Qualified

.9 V

e4

30

260

1.45 mm

AUP/ULP/V

NC7SVL08L6X

Onsemi

AND GATE

INDUSTRIAL

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

1

CMOS

2

TR

1.1

1.2/3.3

15 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

30.5 ns

2 Amp

Gates

.5 mm

85 Cel

-40 Cel

GOLD NICKEL

DUAL

R-PDSO-N6

1

3.6 V

.55 mm

1 mm

Not Qualified

.9 V

e4

30

260

1.45 mm

AUP/ULP/V

NC7WZ04FHX-L22175

Onsemi

INVERTER

NO LEAD

6

VSON

SQUARE

PLASTIC/EPOXY

NO

YES

2

CMOS

1

TR

1.8

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,14

11 ns

32 Amp

.35 mm

85 Cel

-40 Cel

DUAL

S-PDSO-N6

5.5 V

1 mm

1 mm

1.65 V

100 mA

1 mm

LVC/LCX/Z

SN74AUP2G14DRYR

Texas Instruments

INVERTER

INDUSTRIAL

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

YES

2

CMOS

1

TR

1.1

1.2/3.3

30 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

25.5 ns

4 Amp

Gates

.5 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

DUAL

R-PDSO-N6

1

3.6 V

.6 mm

1 mm

Not Qualified

.8 V

.01 mA

e4

30

260

1.45 mm

AUP/ULP/V

SN74HCS02BQAR

Texas Instruments

NOR GATE

AUTOMOTIVE

NO LEAD

14

RECTANGULAR

UNSPECIFIED

YES

YES

4

CMOS

2

TR

4.5

50 pF

36 ns

7.8 Amp

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

QUAD

R-XQCC-N14

1

6 V

2 V

.002 mA

e4

30

260

HC

SN74LVC1G27DRYR

Texas Instruments

NOR GATE

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

1

CMOS

3

TR

3.3

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

20.5 ns

32 Amp

Gates

.5 mm

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-N6

1

5.5 V

.6 mm

1 mm

Not Qualified

1.65 V

.01 mA

e4

NOT SPECIFIED

260

1.45 mm

LVC/LCX/Z

SN74LVC1G34DSFR

Texas Instruments

BUFFER

AUTOMOTIVE

NO LEAD

6

VSON

SQUARE

PLASTIC/EPOXY

NO

YES

1

CMOS

1

TR

3.3

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,14

9.9 ns

32 Amp

Gates

.35 mm

125 Cel

-40 Cel

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

DUAL

S-PDSO-N6

1

5.5 V

.4 mm

1 mm

Not Qualified

1.65 V

.001 mA

e4

NOT SPECIFIED

260

1 mm

LVC/LCX/Z

SNJ54AHC14FK

Texas Instruments

INVERTER

MILITARY

NO LEAD

20

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

YES

6

CMOS

MIL-PRF-38535

1

TUBE

3.3

2/5.5

50 pF

CHIP CARRIER

LCC20,.35SQ

18.5 ns

50 Amp

Gates

1.27 mm

125 Cel

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

S-CQCC-N20

5.5 V

2.03 mm

8.89 mm

Not Qualified

2 V

.02 mA

e0

NOT SPECIFIED

NOT SPECIFIED

8.89 mm

AHC/VHC/H/U/V

74AUP2G14GM,132

NXP Semiconductors

INVERTER

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

YES

2

CMOS

1

TR

1.1

1.2/3.3

30 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

20 ns

1.7 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

3.6 V

.5 mm

1 mm

Not Qualified

.8 V

e3

30

260

1.45 mm

AUP/ULP/V

74LVC1G02GM,132

NXP Semiconductors

NOR GATE

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

1

CMOS

2

TR

1.8

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

10.5 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

5.5 V

.5 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.45 mm

LVC/LCX/Z

74LVC1G38GS,132

NXP Semiconductors

NAND GATE

AUTOMOTIVE

NO LEAD

6

VSON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

2

TR

3.3

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,14

12.5 ns

24 Amp

Gates

.35 mm

125 Cel

OPEN-DRAIN

-40 Cel

TIN

DUAL

S-PDSO-N6

1

5.5 V

.35 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1 mm

LVC/LCX/Z

JM38510/65002B2A

Texas Instruments

NAND GATE

MILITARY

NO LEAD

20

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

YES

3

CMOS

MIL-M-38510 Class B

3

TUBE

5

50 pF

CHIP CARRIER

145 ns

5.2 Amp

1.27 mm

125 Cel

-55 Cel

TIN LEAD

QUAD

S-CQCC-N20

6 V

2.03 mm

8.89 mm

Not Qualified

2 V

.04 mA

e0

8.89 mm

HC

NC7SZ00L6X

Onsemi

NAND GATE

INDUSTRIAL

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

1

CMOS

2

TR

1.8

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

12 ns

32 Amp

Gates

.5 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

DUAL

R-PDSO-N6

1

5.5 V

.55 mm

1 mm

Not Qualified

1.65 V

50 mA

e4

30

260

1.45 mm

LVC/LCX/Z

NC7WP08L8X

Onsemi

AND GATE

INDUSTRIAL

NO LEAD

8

VSON

SQUARE

UNSPECIFIED

NO

YES

2

CMOS

2

TR

1.2

1.2/3.3

30 pF

SMALL OUTLINE, VERY THIN PROFILE

LCC8,.06SQ,20

46.3 ns

.5 Amp

Gates

.5 mm

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

S-XDSO-N8

1

3.6 V

.55 mm

1.6 mm

Not Qualified

.9 V

e4

30

260

1.6 mm

P

74LVC1G02GM,115

NXP Semiconductors

NOR GATE

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

1

CMOS

2

TR

1.8

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

10.5 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

5.5 V

.5 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.45 mm

LVC/LCX/Z

74LVC2G02GF,115

NXP Semiconductors

NOR GATE

AUTOMOTIVE

NO LEAD

8

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

2

CMOS

2

TR

3.3

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.04,14

11.2 ns

24 Amp

Gates

.35 mm

125 Cel

-40 Cel

TIN

DUAL

R-PDSO-N8

1

5.5 V

.5 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.35 mm

LVC/LCX/Z

74AUP1G08GM

NXP Semiconductors

AND GATE

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

1

CMOS

2

TR

1.1

1.2/3.3

30 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

24 ns

1.7 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

3.6 V

.5 mm

1 mm

Not Qualified

.8 V

e3

30

260

1.45 mm

AUP/ULP/V

74AUP1G17GM,132

NXP Semiconductors

BUFFER

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

YES

1

CMOS

1

TR

1.1

1.2/3.3

30 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

20.1 ns

1.7 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

3.6 V

.5 mm

1 mm

Not Qualified

.8 V

e3

30

260

1.45 mm

AUP/ULP/V

74AXP1G32GXH

NXP Semiconductors

OR GATE

INDUSTRIAL

NO LEAD

5

SON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

2

1.2

SMALL OUTLINE

124 ns

.48 mm

85 Cel

-40 Cel

DUAL

S-PDSO-N5

2.75 V

.35 mm

.8 mm

.7 V

.8 mm

AXP

74LVC2G07FW4-7

Diodes Incorporated

BUFFER

AUTOMOTIVE

NO LEAD

6

VSON

SQUARE

PLASTIC/EPOXY

NO

YES

2

CMOS

1

TR

3.3

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,14

8.4 ns

24 Amp

Gate

.35 mm

125 Cel

OPEN-DRAIN

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

S-PDSO-N6

1

5.5 V

.4 mm

1 mm

Not Qualified

1.65 V

e4

30

260

1 mm

LVC/LCX/Z

74LVC2G08GT,115

NXP Semiconductors

AND GATE

AUTOMOTIVE

NO LEAD

8

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

2

CMOS

2

TR

1.8

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.04,20

11.3 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N8

1

5.5 V

.5 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.95 mm

LVC/LCX/Z

74LVC32ABQ,115

NXP Semiconductors

OR GATE

AUTOMOTIVE

NO LEAD

14

HVQCCN

RECTANGULAR

PLASTIC/EPOXY

NO

YES

4

CMOS

2

TR

2.7

3.3

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

LCC14,.1X.12,20

5.5 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

QUAD

R-PQCC-N14

1

3.6 V

1 mm

2.5 mm

Not Qualified

1.2 V

e4

30

260

3 mm

LVC/LCX/Z

74LVC3G04GT,115

NXP Semiconductors

INVERTER

AUTOMOTIVE

NO LEAD

8

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

3

CMOS

1

TR

1.8

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.04,20

9.5 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N8

1

5.5 V

.5 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.95 mm

LVC/LCX/Z

74AUP1G09GM,132

NXP Semiconductors

AND GATE

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

YES

YES

1

CMOS

2

TR

1.1

1.2/3.3

30 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

24 ns

1.7 Amp

Gates

.5 mm

125 Cel

OPEN-DRAIN

-40 Cel

TIN

DUAL

R-PDSO-N6

1

3.6 V

.5 mm

1 mm

Not Qualified

.8 V

e3

30

260

1.45 mm

AUP/ULP/V

74AUP2G02GS,115

NXP Semiconductors

NOR GATE

AUTOMOTIVE

NO LEAD

8

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

2

CMOS

2

TR

1.1

1.2/3.3

30 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.04,14

24.7 ns

1.7 Amp

Gates

.35 mm

125 Cel

-40 Cel

TIN

DUAL

R-PDSO-N8

1

3.6 V

.35 mm

1 mm

Not Qualified

.8 V

e3

30

260

1.35 mm

AUP/ULP/V

74AUP2G07GS,132

NXP Semiconductors

BUFFER

AUTOMOTIVE

NO LEAD

6

VSON

SQUARE

PLASTIC/EPOXY

NO

YES

2

CMOS

1

TR

1.1

1.2/3.3

30 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,14

20.7 ns

1.7 Amp

Gates

.35 mm

125 Cel

OPEN-DRAIN

-40 Cel

TIN

DUAL

S-PDSO-N6

1

3.6 V

.35 mm

1 mm

Not Qualified

.8 V

e3

30

260

1 mm

AUP/ULP/V

74LVC1G07GM,115

NXP Semiconductors

BUFFER

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

1

CMOS

1

TR

1.8

3.3

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

8.4 ns

24 Amp

Gates

.5 mm

125 Cel

OPEN-DRAIN

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

5.5 V

.5 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.45 mm

LVC/LCX/Z

74LVC1G332GM,115

NXP Semiconductors

OR GATE

AUTOMOTIVE

NO LEAD

6

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

1

CMOS

3

TR

1.8

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC6,.04,20

21.5 ns

24 Amp

Gates

.5 mm

125 Cel

-40 Cel

Tin (Sn)

DUAL

R-PDSO-N6

1

5.5 V

.5 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.45 mm

LVC/LCX/Z

74LVC1G38GX,125

NXP Semiconductors

NAND GATE

AUTOMOTIVE

NO LEAD

5

SON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

2

TR

3.3

3.3

50 pF

SMALL OUTLINE

LCC5(UNSPEC)

12.5 ns

24 Amp

Gates

.48 mm

125 Cel

OPEN-DRAIN

-40 Cel

TIN

DUAL

S-PDSO-N5

1

5.5 V

.35 mm

.8 mm

Not Qualified

1.65 V

e3

30

260

.8 mm

LVC/LCX/Z

74LVC2G32GS,115

NXP Semiconductors

OR GATE

AUTOMOTIVE

NO LEAD

8

VSON

RECTANGULAR

PLASTIC/EPOXY

NO

YES

2

CMOS

2

TR

3.3

3.3

50 pF

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.04,14

11 ns

24 Amp

Gates

.35 mm

125 Cel

-40 Cel

TIN

DUAL

R-PDSO-N8

1

5.5 V

.35 mm

1 mm

Not Qualified

1.65 V

e3

30

260

1.35 mm

LVC/LCX/Z

M38510/30001B2X

Texas Instruments

NAND GATE

MILITARY

NO LEAD

20

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

YES

4

TTL

2

5

50 pF

CHIP CARRIER

24 ns

4 Amp

125 Cel

-55 Cel

QUAD

S-CQCC-N20

5.5 V

Qualified

4.5 V

4.4 mA

LS

Logic Gates

Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.

Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.

Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.

Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.

Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.

Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.