Part | RoHS | Manufacturer | Logic IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Schmitt Trigger | Surface Mount | No. of Functions | Technology | Screening Level | No. of Inputs | No. of Bits | Translation | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Load Capacitance (CL) | Package Style (Meter) | Package Equivalence Code | Propagation Delay (tpd) | Maximum I (ol) | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Minimum Operating Temperature | Terminal Finish | Terminal Position | Control Type | Minimum fmax | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Output Polarity | Minimum Supply Voltage (Vsup) | Maximum Power Supply Current (ICC) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Family |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
OR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
38535Q/M;38534H;883B |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T14 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
Renesas Electronics |
XOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
4 |
CMOS |
2 |
5 |
IN-LINE |
200 ns |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDIP-T14 |
12 V |
4.06 mm |
7.62 mm |
3 V |
19.24 mm |
4000/14000/40000 |
|||||||||||||||||||||||||
Renesas Electronics |
AND GATE |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
INVERTER |
INDUSTRIAL |
GULL WING |
5 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP5/6,.08 |
36 ns |
6 Amp |
Gates |
.635 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G5 |
5.5 V |
Not Qualified |
1.65 V |
||||||||||||||||||||
Renesas Electronics |
NAND GATE |
MILITARY |
YES |
4 |
CMOS |
2 |
5 |
5 |
50 pF |
DIE OR CHIP |
41 ns |
4 Amp |
Gates |
125 Cel |
-55 Cel |
5.5 V |
Not Qualified |
4.5 V |
||||||||||||||||||||||||||||||||
Renesas Electronics |
XOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
4 |
CMOS |
2 |
5 |
IN-LINE |
378 ns |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Qualified |
3 V |
RADIATION HARDENED |
19.43 mm |
4000/14000/40000 |
|||||||||||||||||||||||
|
Renesas Electronics |
XOR GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
4 |
CMOS |
MIL-PRF-38535 Class V |
2 |
5 |
FLATPACK |
280 ns |
1.27 mm |
125 Cel |
-55 Cel |
GOLD |
DUAL |
R-CDFP-F14 |
18 V |
2.92 mm |
6.285 mm |
Not Qualified |
3 V |
e4 |
4000/14000/40000 |
||||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
24 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-PDIP-T14 |
Not Qualified |
|||||||||||||||||||||||||||
Renesas Electronics |
NOR GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
3 |
CMOS |
MIL-PRF-38535 Class V |
3 |
5 |
FLATPACK |
338 ns |
1.27 mm |
125 Cel |
-55 Cel |
GOLD |
DUAL |
R-CDFP-F14 |
18 V |
2.92 mm |
6.285 mm |
Qualified |
3 V |
e4 |
9.525 mm |
4000/14000/40000 |
||||||||||||||||||||
Renesas Electronics |
NOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
2 |
CMOS |
3 |
5/15 |
15 pF |
IN-LINE |
DIP14,.3 |
120 ns |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T14 |
12 V |
Not Qualified |
3 V |
||||||||||||||||||||||||
|
Renesas Electronics |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
6 |
CMOS |
1 |
TR |
3.3 |
3.3 |
SMALL OUTLINE |
SOP14,.3 |
18 ns |
8 Amp |
Gates |
1.27 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
DUAL |
R-PDSO-G14 |
5.5 V |
Not Qualified |
2 V |
||||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
4.5/15 |
50 pF |
IN-LINE |
DIP16,.3 |
5.2 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Renesas Electronics |
NOR GATE |
|||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
XOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
.36 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-PDIP-T14 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Renesas Electronics |
AND GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
4 |
CMOS |
2 |
5 |
FLATPACK |
338 ns |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F14 |
18 V |
2.92 mm |
6.285 mm |
Qualified |
3 V |
RADIATION HARDENED |
9.525 mm |
4000/14000/40000 |
|||||||||||||||||||||||
|
Renesas Electronics |
INVERTER |
INDUSTRIAL |
GULL WING |
5 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
YES |
1 |
CMOS |
1 |
TR |
5 |
3.3 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP5/6,.08 |
46 ns |
6 Amp |
Gates |
.635 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G5 |
5.5 V |
Not Qualified |
1.65 V |
||||||||||||||||||||
Renesas Electronics |
NOR GATE |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
4 |
CMOS |
2 |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE |
SOP14,.25 |
5.4 ns |
24 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G14 |
3.6 V |
Not Qualified |
3 V |
e0 |
||||||||||||||||||||
Renesas Electronics |
OR GATE |
|||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
NOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
3 |
CMOS |
MIL-PRF-38535 Class V |
3 |
5 |
IN-LINE |
338 ns |
2.54 mm |
125 Cel |
-55 Cel |
GOLD |
DUAL |
R-CDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Qualified |
3 V |
e4 |
19.43 mm |
4000/14000/40000 |
||||||||||||||||||||
Renesas Electronics |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
2 |
CMOS |
MIL-PRF-38535 Class V |
2 |
5 |
IN-LINE |
270 ns |
125 Cel |
-55 Cel |
DUAL |
R-CDIP-T14 |
18 V |
Qualified |
3 V |
4000/14000/40000 |
||||||||||||||||||||||||||
Renesas Electronics |
OR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
300k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
NO |
4 |
CMOS |
MIL-PRF-38535 Class V |
2 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
12 ns |
12 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T14 |
5.08 mm |
7.62 mm |
Not Qualified |
e0 |
AC |
|||||||||||||||||
|
Renesas Electronics |
OR GATE |
INDUSTRIAL |
FLAT |
5 |
DFP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
2 |
TR |
3.3 |
3.3 |
50 pF |
FLATPACK |
FL5/6,.047,20 |
34 ns |
6 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDFP-F5 |
5.5 V |
Not Qualified |
1.65 V |
||||||||||||||||||||
Renesas Electronics |
NAND GATE |
MILITARY |
NO |
4 |
CMOS |
2 |
5 |
2/6 |
50 pF |
DIE OR CHIP |
125 ns |
4 Amp |
Gates |
125 Cel |
OPEN-DRAIN |
-55 Cel |
6 V |
Not Qualified |
2 V |
HC/UH |
||||||||||||||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
38535Q/M;38534H;883B |
3.3/5 |
50 pF |
IN-LINE |
DIP14,.3 |
12 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T14 |
Not Qualified |
1.5 V |
||||||||||||||||||||||||||
Renesas Electronics |
AND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
38535Q/M;38534H;883B |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T14 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
Renesas Electronics |
INVERTER |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
6 |
CMOS |
MIL-PRF-38535 Class V |
1 |
5 |
FLATPACK |
149 ns |
1.27 mm |
125 Cel |
-55 Cel |
GOLD |
DUAL |
R-CDFP-F14 |
20 V |
5.33 mm |
6.285 mm |
Not Qualified |
3 V |
e4 |
9.585 mm |
4000/14000/40000 |
|||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
NO |
6 |
CMOS |
1 |
5 |
5 |
50 pF |
DIE OR CHIP |
24 ns |
4 Amp |
Gates |
125 Cel |
-55 Cel |
5.5 V |
Not Qualified |
4.5 V |
||||||||||||||||||||||||||||||||
Renesas Electronics |
||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
NOR GATE |
INDUSTRIAL |
NO |
2 |
CMOS |
4 |
5 |
5 |
50 pF |
DIE OR CHIP |
28 ns |
4 Amp |
Gates |
85 Cel |
-40 Cel |
5.5 V |
Not Qualified |
4.5 V |
HCT |
|||||||||||||||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
YES |
6 |
CMOS |
1 |
5 |
5 |
50 pF |
DIE OR CHIP |
48 ns |
4 Amp |
Gates |
125 Cel |
-55 Cel |
5.5 V |
Not Qualified |
4.5 V |
HCT |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
YES |
6 |
CMOS |
1 |
TR |
3.3/5 |
50 pF |
SMALL OUTLINE |
SOP14,.3 |
15 ns |
12 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDSO-G14 |
6 V |
Not Qualified |
2 V |
|||||||||||||||||||||
|
Renesas Electronics |
BUFFER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
6 |
CMOS |
1 |
TR |
5 |
3.3 |
50 pF |
SMALL OUTLINE |
SOP14,.3 |
18 ns |
8 Amp |
Gates |
1.27 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
DUAL |
R-PDSO-G14 |
5.5 V |
Not Qualified |
2 V |
|||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
YES |
NO |
CMOS |
5/15 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T14 |
Not Qualified |
||||||||||||||||||||||||||||||
Renesas Electronics |
AND GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
4 |
CMOS |
MIL-PRF-38535 Class V |
2 |
5 |
FLATPACK |
338 ns |
1.27 mm |
125 Cel |
-55 Cel |
GOLD |
DUAL |
R-CDFP-F14 |
18 V |
2.92 mm |
6.285 mm |
Qualified |
3 V |
RADIATION HARDENED |
e4 |
9.525 mm |
4000/14000/40000 |
|||||||||||||||||||
Renesas Electronics |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
3/15 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T14 |
Not Qualified |
||||||||||||||||||||||||||||||||
Renesas Electronics |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
.36 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T14 |
Not Qualified |
||||||||||||||||||||||||||||
Renesas Electronics |
AND GATE |
|||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
.42 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T14 |
Not Qualified |
||||||||||||||||||||||||||||
Renesas Electronics |
AND GATE |
MILITARY |
NO |
4 |
CMOS |
2 |
5 |
2/6 |
50 pF |
DIE OR CHIP |
115 ns |
4 Amp |
Gates |
125 Cel |
-55 Cel |
6 V |
Not Qualified |
2 V |
||||||||||||||||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
6 |
CMOS |
1 |
5 |
IN-LINE |
80 ns |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-GDIP-T16 |
18 V |
3 V |
e0 |
4000/14000/40000 |
|||||||||||||||||||||||||||
|
Renesas Electronics |
INVERTER |
INDUSTRIAL |
GULL WING |
6 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP6,.08 |
36 ns |
6 Amp |
Gates |
.635 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
DUAL |
R-PDSO-G6 |
5.5 V |
Not Qualified |
1.65 V |
|||||||||||||||||||
Renesas Electronics |
BUFFER |
MILITARY |
NO |
6 |
CMOS |
1 |
5 |
2/6 |
50 pF |
DIE OR CHIP |
105 ns |
4 Amp |
Gates |
125 Cel |
-55 Cel |
6 V |
Not Qualified |
2 V |
HC/UH |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
NOR GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
3 |
CMOS |
MIL-PRF-38535 Class V |
3 |
5 |
FLATPACK |
338 ns |
1.27 mm |
125 Cel |
-55 Cel |
GOLD |
DUAL |
R-CDFP-F14 |
18 V |
2.92 mm |
6.285 mm |
Not Qualified |
3 V |
e4 |
4000/14000/40000 |
||||||||||||||||||||
Renesas Electronics |
NAND GATE |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
CERAMIC |
NO |
YES |
CMOS |
MIL-STD-883 Class B (Modified) |
5/15 |
15 pF |
FLATPACK |
FL14,.3 |
.31 Amp |
Gates |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDFP-F14 |
Not Qualified |
|||||||||||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
NO LEAD |
15 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
6 |
CMOS |
1 |
5 |
UNCASED CHIP |
162 ns |
125 Cel |
-55 Cel |
UPPER |
R-XUUC-N15 |
18 V |
Qualified |
3 V |
4000/14000/40000 |
||||||||||||||||||||||||||||
Renesas Electronics |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
2 |
CMOS |
MIL-PRF-38535 Class V |
4 |
5 |
IN-LINE |
22 ns |
125 Cel |
-55 Cel |
DUAL |
R-CDIP-T14 |
5.5 V |
Not Qualified |
4.5 V |
HCT |
||||||||||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
24 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-PDIP-T14 |
Not Qualified |
|||||||||||||||||||||||||||
Renesas Electronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
38535Q/M;38534H;883B |
4.5/15 |
50 pF |
IN-LINE |
DIP16,.3 |
1.8 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.
Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.
Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.
Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.
Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.
Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.