Part | RoHS | Manufacturer | Logic IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Schmitt Trigger | Surface Mount | No. of Functions | Technology | Screening Level | No. of Inputs | No. of Bits | Translation | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Load Capacitance (CL) | Package Style (Meter) | Package Equivalence Code | Propagation Delay (tpd) | Maximum I (ol) | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Minimum Operating Temperature | Terminal Finish | Terminal Position | Control Type | Minimum fmax | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Output Polarity | Minimum Supply Voltage (Vsup) | Maximum Power Supply Current (ICC) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Family |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Samsung |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
||||||||||||||||||||||||||
Samsung |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
CMOS |
5 |
5 |
50 pF |
SMALL OUTLINE |
SOP14,.25 |
8 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G14 |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Samsung |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
YES |
CMOS |
TR |
5 |
5 |
50 pF |
SMALL OUTLINE |
SOP14,.25 |
8 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G14 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Samsung |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
125 Cel |
OPEN-DRAIN |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Samsung |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Samsung |
AND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Samsung |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
40 mA |
e0 |
||||||||||||||||||||||||
Samsung |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
6 |
CMOS |
1 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
25 ns |
8 Amp |
Gates |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
5.5 V |
Not Qualified |
4.5 V |
e0 |
|||||||||||||||||||
Samsung |
AND GATE |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
CMOS |
TR |
5 |
5 |
50 pF |
SMALL OUTLINE |
SOP14,.25 |
8 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G14 |
e0 |
|||||||||||||||||||||||||
Samsung |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
40 mA |
e0 |
||||||||||||||||||||||||
Samsung |
AND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Samsung |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
TIN LEAD |
DUAL |
R-XDIP-T14 |
3 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Samsung |
BUFFER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
CMOS |
TR |
5 |
5 |
50 pF |
SMALL OUTLINE |
SOP16,.25 |
8 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G16 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Samsung |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
125 Cel |
OPEN-DRAIN |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Samsung |
INVERTER |
INDUSTRIAL |
GULL WING |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
YES |
CMOS |
TR |
5 |
5 |
50 pF |
SMALL OUTLINE |
SOP16,.25 |
8 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G16 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Samsung |
XNOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
125 Cel |
OPEN-DRAIN |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Samsung |
NOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
3 |
Not Qualified |
.02 mA |
e0 |
|||||||||||||||||||||||
Samsung |
XOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
20 ns |
8 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
5.5 V |
Not Qualified |
4.5 V |
e0 |
||||||||||||||||||||
Samsung |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-XDIP-T14 |
3 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Samsung |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Samsung |
AND-OR-INVERT GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Samsung |
AND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5 |
5 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Samsung |
INVERTER |
INDUSTRIAL |
GULL WING |
14 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
YES |
CMOS |
5 |
5 |
50 pF |
SMALL OUTLINE |
SOP14,.25 |
8 Amp |
Gates |
1.27 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G14 |
Not Qualified |
e0 |
Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.
Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.
Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.
Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.
Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.
Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.