CACHE DRAM DRAM 58

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

TMS664164-12DGE

Texas Instruments

CACHE DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

4194304 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

4MX16

4M

0 Cel

DUAL

2

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

22.22 mm

8 ns

TMS664814-12DGE

Texas Instruments

CACHE DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

8388608 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

8MX8

8M

0 Cel

DUAL

2

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

22.22 mm

8 ns

TMS664814-10DGER

Texas Instruments

CACHE DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

8388608 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

8MX8

8M

0 Cel

DUAL

2

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

22.22 mm

7.5 ns

TMS664814-12DGER

Texas Instruments

CACHE DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

8388608 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

8MX8

8M

0 Cel

DUAL

2

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

22.22 mm

8 ns

TMS664164-10DGER

Texas Instruments

CACHE DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

4194304 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

4MX16

4M

0 Cel

DUAL

2

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

22.22 mm

7.5 ns

TMS664164-12DGER

Texas Instruments

CACHE DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

4194304 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

4MX16

4M

0 Cel

DUAL

2

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

22.22 mm

8 ns

DM2202J1-12

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

225 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212J1-12

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

225 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212T1-15L

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202J-15I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

180 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202J-20

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

20 ns

DM2202T-15

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202J-15

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202T-12

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212T-12I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2202J1-15L

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

180 mA

1048576 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202T1-12L

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212T1-15I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2212J-15I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

180 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2212T1-15

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202J1-15

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

180 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202T-12L

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2202T1-12I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2202T-15I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202T1-15

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2212J-12L

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

225 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212T-12

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212J1-15L

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

180 mA

1048576 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2212T-15

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202T1-12

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212J-20

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

20 ns

DM2202J-12

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

225 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2202T1-15L

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2212J-15

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2212T-12L

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2202T-15L

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202J1-15I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

180 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202T1-15I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2212T1-12

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2202J1-12I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

225 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212T-15I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2202T-12I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212T1-12L

Infineon Technologies

CACHE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

225 mA

1048576 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.36,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212J1-15I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

180 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2212J-12

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

225 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2202J-12I

Infineon Technologies

CACHE DRAM

INDUSTRIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

225 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

12 ns

DM2212J-15L

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

180 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DM2200J-15

Infineon Technologies

CACHE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ28,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

.001 Amp

15 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.