CACHE DRAM MODULE DRAM 316

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4H510838D-VCB0T	Samsung	CACHE DRAM MODULE	COMMERCIAL	54	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		325 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP54,.46,16	DRAMs	.4 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	DUAL		R-PDSO-G54	1			133 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.75 ns
K4S1G0632D-UC75	Samsung	CACHE DRAM MODULE	COMMERCIAL	54	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		230 mA	268435456 words	1,2,4,8		COMMON	3.3	3.3	4	SMALL OUTLINE, SHRINK PITCH	SOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	256MX4	256M	0 Cel	MATTE TIN	DUAL		R-PDSO-G54	1			133 MHz		Not Qualified	1073741824 bit			e3			.004 Amp	1,2,4,8		5.4 ns
K4H1G0738C-UCA2T	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		370 mA	134217728 words			COMMON	2.5	2.5	8	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX8	128M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	1073741824 bit			e3			.01 Amp			.75 ns
K4H510838D-VCCCT	Samsung	CACHE DRAM MODULE	COMMERCIAL	54	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		385 mA	67108864 words	2,4,8		COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP54,.46,16	DRAMs	.4 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	DUAL		R-PDSO-G54	1			200 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.65 ns
M393T2950CZA-E6	Samsung	CACHE DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4830 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1	1.9 V	30 mm	333 MHz	4 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	e3			.724 Amp		133.35 mm	.45 ns
K4H511638C-ZIB3T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4H1G0638B-ULA2	Samsung	CACHE DRAM MODULE	COMMERCIAL	64	SSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	268435456 words			COMMON	2.5	2.5	4	SMALL OUTLINE, SHRINK PITCH	SSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	1073741824 bit					260	.01 Amp			.75 ns
M312L5128AU0-B0	Samsung	CACHE DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		7450 mA	536870912 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	MATTE TIN	DUAL		R-PDMA-N184	1			133 MHz		Not Qualified	38654705664 bit			e3			1.12 Amp			.75 ns
K4T1G084QR-HCF7	Samsung	CACHE DRAM MODULE		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		285 mA	134217728 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B60	3			400 MHz		Not Qualified	1073741824 bit					260		4,8		.4 ns
K4H511638C-ZPB3T	Samsung	CACHE DRAM MODULE	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4H510838D-ULB3T	Samsung	CACHE DRAM MODULE	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4B1G0846D-HCH9T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM		R-PBGA-B82	3			667 MHz		Not Qualified	1073741824 bit			e1		260		8		.255 ns
K4B1G0446D-HCF7T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M		MATTE TIN	BOTTOM		R-PBGA-B82	1			400 MHz		Not Qualified	1073741824 bit			e3				8		.4 ns
K4B1G0446D-HCF8T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM		R-PBGA-B82	3			533 MHz		Not Qualified	1073741824 bit			e1		260		8		.3 ns
K4B1G0846D-HCF8T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	134217728 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM		R-PBGA-B82	3			533 MHz		Not Qualified	1073741824 bit			e1		260		8		.3 ns
K4B1G0446D-HCH9T	Samsung	CACHE DRAM MODULE		82	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	268435456 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM		R-PBGA-B82	3			667 MHz		Not Qualified	1073741824 bit			e1		260		8		.255 ns
K4B1G1646D-HCF8T	Samsung	CACHE DRAM MODULE		100	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3			533 MHz		Not Qualified	1073741824 bit			e1		260	.01 Amp	8		.3 ns
MT16VDDF6464LHG-335D2	Micron Technology	CACHE DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3310 mA	67108864 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200	1			167 MHz		Not Qualified	4294967296 bit						.064 Amp			.7 ns
MT72KSZS2G72PZ-1G1M1	Micron Technology	CACHE DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			2147483648 words			COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	2GX72	2G	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			533 MHz		Not Qualified	154618822656 bit			e3						.3 ns
MT16VDDF6464LHG-265D2	Micron Technology	CACHE DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2830 mA	67108864 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200	1			133 MHz		Not Qualified	4294967296 bit						.064 Amp			.75 ns
MT47H64M8JN-5E:F	Micron Technology	CACHE DRAM MODULE	COMMERCIAL	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit						.007 Amp	4,8		.6 ns
MT46V32M16D3TG-8	Micron Technology	CACHE DRAM MODULE	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			33554432 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G66				125 MHz		Not Qualified	536870912 bit			e0			.003 Amp	2,4,8		.8 ns
MT47H64M8CF-5E:F	Micron Technology	CACHE DRAM MODULE	COMMERCIAL	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3			.007 Amp	4,8		.6 ns
MT46H8M32LGCM-54IT:H	Micron Technology	CACHE DRAM MODULE	INDUSTRIAL	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		170 mA	8388608 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel		BOTTOM		R-PBGA-B90				185 MHz		Not Qualified	268435456 bit						.00001 Amp	2,4,8,16		5 ns
MT47H128M4JN-5E:F	Micron Technology	CACHE DRAM MODULE	COMMERCIAL	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit						.007 Amp	4,8		.6 ns
MT47H32M16HW-5E:F	Micron Technology	CACHE DRAM MODULE	COMMERCIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		340 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B84	1			200 MHz		Not Qualified	536870912 bit						.007 Amp	4,8		.6 ns
MT47H32M16HR-5E:F	Micron Technology	CACHE DRAM MODULE	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	340 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	Matte Tin (Sn)	BOTTOM	1	R-PBGA-B84	1	1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	RAS ONLY/CAS BEFORE RAS/SELF REFRESH	e3	30	260	.007 Amp	4,8	12.5 mm	.6 ns
MT47H128M4CF-5E:F	Micron Technology	CACHE DRAM MODULE	COMMERCIAL	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3			.007 Amp	4,8		.6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.