DDR DRAM DRAM 1,059

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT49H32M18CBM-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	20 ns
MT49H32M18BM-25:A	Micron Technology	DDR DRAM	OTHER	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	970 mA	33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX18	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.048 Amp		18.5 mm	20 ns
MT49H16M36CFM-18IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	15 ns
MT49H8M36CBM-25	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	.25 ns
MT49H16M16BM-4IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	616 mA	16777216 words	2,4		COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.95 V	.93 mm	250 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e1					18.5 mm
MT49H16M36SJ-18:BTR	Micron Technology	DDR DRAM	OTHER	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX						18.5 mm
MT49H32M18FM-33IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	20 ns
MT49H64M9HU-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	970 mA	67108864 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0			.048 Amp		18.5 mm	20 ns
MT49H32M18CHU-33:A	Micron Technology	DDR DRAM	OTHER	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	20 ns
MT49H32M18CBM-25EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	15 ns
MT49H16M36FM-25ZIT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	914 mA	16777216 words	2,4,8	YES	COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX36	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e0			.048 Amp		18.5 mm	.2 ns
MT49H16M36CHT-33	Micron Technology	DDR DRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm
MT49H16M18FM-25E:B	Micron Technology	DDR DRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H32M18FM-33E	Micron Technology	DDR DRAM	OTHER	144	VBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	597 mA	33554432 words	2,4,8	YES	COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX18	32M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e0			.048 Amp		18.5 mm	.25 ns
MT49H64M9CHT-25EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX9	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	15 ns
MT49H8M36BM-25	Micron Technology	DDR DRAM		144	BGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	8MX36	8M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260			18.5 mm	.25 ns
MT49H32M18CFM-33:B	Micron Technology	DDR DRAM		144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M		TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	20 ns
MT49H64M9CBM-33:A	Micron Technology	DDR DRAM	OTHER	144	TBGA	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	819 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	64MX9	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.048 Amp	2,4,8	18.5 mm	20 ns
MT44K32M36PKM-125	Micron Technology	DDR DRAM		168	BGA	UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY						32MX36	32M			BOTTOM	1	X-PBGA-B168						1207959552 bit
MT44K64M18RB-107EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		64MX18	64M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M36RCT-125EIT	Micron Technology	DDR DRAM		168	BGA	UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY						32MX36	32M		TIN SILVER COPPER	BOTTOM	1	X-PBGA-B168						1207959552 bit			e1
MT48H16M32LFB5-6AT:C	Micron Technology	DDR DRAM	INDUSTRIAL	90	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B90	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						13 mm	5 ns
MT44K64M18RCT-125E:A	Micron Technology	DDR DRAM	COMMERCIAL	168	LBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2610 mA	67108864 words	2,4,8		COMMON	1.35	1.35	18	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	70 Cel	3-STATE	64MX18	64M	0 Cel		BOTTOM	1	S-PBGA-B168		1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4,8	13.5 mm	.1 ns
MT48H16M32LFB5-6L:C	Micron Technology	DDR DRAM	COMMERCIAL	90	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT44K16M36RB-093E:B	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1					13.5 mm
MT44K32M18RB-125E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18PA-107E:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT48H32M16LFB4-75AT:C	Micron Technology	DDR DRAM	INDUSTRIAL	54	VFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel		BOTTOM	1	S-PBGA-B54	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						8 mm	5.4 ns
MT44K64M18RB-093E:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			64MX18	64M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K16M36RB-125E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M36RB-093F:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36PA-125EIT:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36PA-125E:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36PA-093:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		TIN LEAD SILVER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e0					13.5 mm
MT44K32M18RB-093E	Micron Technology	DDR DRAM																																										NOT SPECIFIED	NOT SPECIFIED
MT44K32M18PA-125F:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT48H32M16LFB4-6LAT:C	Micron Technology	DDR DRAM	INDUSTRIAL	54	VFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel		BOTTOM	1	S-PBGA-B54	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						8 mm	5 ns
MT44K32M18PA-093E:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT48H32M16LGB4-75LIT:C	Micron Technology	DDR DRAM	INDUSTRIAL	54	VFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	5.4 ns
MT44K16M36PA-125FIT:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-125F	Micron Technology	DDR DRAM																																										NOT SPECIFIED	NOT SPECIFIED
MT44K32M18RB-107E	Micron Technology	DDR DRAM																																										NOT SPECIFIED	NOT SPECIFIED
MT44K64M18RCT-125EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	168	LBGA	SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	2610 mA	67108864 words	2,4,8		COMMON	1.35	1.35	18	GRID ARRAY, LOW PROFILE	BGA168,13X13,40	DRAMs	1 mm	85 Cel	3-STATE	64MX18	64M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.45 mm	800 MHz	13.5 mm	Not Qualified	1207959552 bit		AUTO REFRESH				.25 Amp	2,4,8	13.5 mm	.1 ns
MT48H32M16LGB4-6LIT:C	Micron Technology	DDR DRAM	INDUSTRIAL	54	VFBGA	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					8 mm	5 ns
MT44K32M18PA-125E:A	Micron Technology	DDR DRAM		168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT48H16M32LGB5-75IT:C	Micron Technology	DDR DRAM	INDUSTRIAL	90	VFBGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns
MT44K32M18RB-093E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.