DDR DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KVR16S11S8/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words			1.5		64	MICROELECTRONIC ASSEMBLY					85 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30 mm				34359738368 bit	1.425 V	PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM		NOT SPECIFIED	NOT SPECIFIED		67.6 mm
AS4C512M16D3LA-10BIN	Alliance Memory	DDR DRAM MODULE	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.425 V	1.2 mm		9 mm		8589934592 bit	1.275 V	AUTO/SELF REFRESH					13.5 mm
AS4C512M16D3LA-10BCN	Alliance Memory	DDR DRAM MODULE	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96	3	1.425 V	1.2 mm		9 mm		8589934592 bit	1.275 V	AUTO/SELF REFRESH					13.5 mm
KVR16LN11/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words			1.35		64	MICROELECTRONIC ASSEMBLY					85 Cel		512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30 mm				34359738368 bit	1.28 V	PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM	e4				133.35 mm
KVR16LS11/4	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words			1.35		64	MICROELECTRONIC ASSEMBLY					85 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.12 mm				34359738368 bit	1.28 V	PROGRAMMABLE CAS LATENCY; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED		67.6 mm
KVR16LS11/8	Kingston Technology Company	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			1073741824 words		COMMON	1.35	1.35	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	85 Cel	3-STATE	1GX64	1G	0 Cel		DUAL		R-PDMA-N204				800 MHz		Not Qualified	68719476736 bit								.225 ns
KVR16LN11/8	Kingston Technology Company	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words			1.35		64	MICROELECTRONIC ASSEMBLY					85 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30 mm				68719476736 bit	1.28 V	ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY; SEATED HGT-NOM					133.35 mm
MT8HTF12864HDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1430 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.45 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		3.6 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4			.056 Amp	67.6 mm	.4 ns
MT36KSF2G72PZ-1G6E1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY		8		1 mm	95 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		154618822656 bit	1.283 V	SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		133.35 mm
MTA16ATF2G64HZ-2G6E1	Micron Technology	DDR DRAM MODULE	OTHER	260			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		2GX64	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					69.6 mm
AS4C512M16D3LA-10BCNTR	Alliance Memory	DDR DRAM MODULE	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96	3	1.425 V	1.2 mm		9 mm		8589934592 bit	1.275 V	AUTO/SELF REFRESH					13.5 mm
M393A1G40DB0-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm			1GX72	1G			DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		133.35 mm
HMA84GR7CJR4N-VK	Sk Hynix	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm	85 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.88 mm		3.98 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
HMT42GR7BFR4A-PB	Sk Hynix	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.33 mm		7.65 mm		154618822656 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX		20	260		133.75 mm
M393A4K40BB1-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	YES	COMMON	1.2	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		Other Memory ICs	.85 mm	85 Cel	3-STATE	4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1200 MHz	3.9 mm	Not Qualified	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		133.35 mm	.175 ns
MT16KTF1G64HZ-1G9P1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	SELF REFRESH; WD-MAX		30	260		67.6 mm
MT8HTF12864HDZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY					70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V	30.15 mm		3.8 mm		8589934592 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX					67.6 mm
KVR1333D3S9/4GKC	Kingston Technology Company	DDR DRAM MODULE
MTA36ASF4G72PZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY					95 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M378T2953EZ3-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260	.128 Amp		.45 ns
MTA9ADF1G72AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY					95 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		2.7 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
HMA82GR7CJR8N-VK	Sk Hynix	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.88 mm		3.98 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393A2K40CB1-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm	95 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		4.3 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA36ASF2G72PZ-2G1B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA4ATF51264HZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words			1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm		34359738368 bit	1.14 V	WD-MAX					69.6 mm
M471B5173QH0-YK0	Samsung	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				.6 mm	85 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.13 mm		3.8 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX					67.6 mm
MTA4ATF51264HZ-2G6E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words			1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm		34359738368 bit	1.14 V	WD-MAX					69.6 mm
MTA8ATF51264HZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		512MX72	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MT16KTF2G64HZ-1G6A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		2GX64	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		137438953472 bit	1.283 V	SELF REFRESH; WD-MAX		30	260		67.6 mm
MT18KSF51272HZ-1G6K2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				.6 mm	70 Cel		512MX72	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX					67.6 mm
MTA8ATF1G64HZ-3G2J1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		64	MICROELECTRONIC ASSEMBLY					95 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					69.6 mm
M471B5273DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1240 mA	536870912 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	667 MHz	3.8 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				.192 Amp	67.6 mm	.255 ns
M378B5273DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1240 mA	536870912 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	85 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.192 Amp	133.35 mm	20 ns
M471A1K43CB1-CRC	Samsung	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words			1.2		64	MICROELECTRONIC ASSEMBLY					85 Cel		1GX64	1G	0 Cel		DUAL	1	R-XDMA-N260							68719476736 bit
MT8JTF12864HZ-1G6G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4800 mA	134217728 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N204	1			800 MHz		Not Qualified	8589934592 bit			e3			.096 Amp		.225 ns
M378B5773DH0-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	268435456 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.096 Amp	133.35 mm	20 ns
MTA18ASF1G72HZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		1GX72	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		69.6 mm
M378T2863DZS-CE6	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V	4 mm	333 MHz	30 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260		133.35 mm	.45 ns
MT8JTF25664AZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3080 mA	268435456 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				667 MHz		Not Qualified	17179869184 bit						.096 Amp
MTA16ATF2G64AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		64	MICROELECTRONIC ASSEMBLY					85 Cel		2GX64	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF2G72AZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF2G72AZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA4ATF51264AZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2		64	MICROELECTRONIC ASSEMBLY					85 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		2.7 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M378B5673EH1-CF8	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1640 mA	268435456 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V		533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.16 Amp		.3 ns
M378B5673EH1-CH9	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2120 mA	268435456 words	YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V		667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.16 Amp		.255 ns
M378T2863QZS-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH			260			.4 ns
M378T5663QZ3-CF7	Samsung	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2280 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH			260	.24 Amp		.4 ns
M386A8K40BM1-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm			8GX72	8G			DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.