DDR1 DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYB25D256400BTL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.009 Amp	2,4,8	22.22 mm	.7 ns
HYB25D256400AT-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	180 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.015 Amp	2,4,8	22.22 mm	.8 ns
HYB25D512800CF-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		64MX8	64M		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH						12 mm	.5 ns
HYB25D512160CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D256160BE-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		16MX16	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.8 ns
HYB25D256400CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		64MX4	64M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e3					22.22 mm	.6 ns
HYB25D256160BCL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	16MX16	16M	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.007 Amp	2,4,8	12 mm	.8 ns
HYB25D512800CT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25DC256160CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		16MX16	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D256400CEL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		64MX4	64M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e3					22.22 mm	.7 ns
HYB25D512800BT-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.6	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX8	64M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	22.22 mm	.5 ns
HYB25D1G800AFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D512160AC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY				70 Cel		32MX16	32M		BOTTOM	1	R-PBGA-B60	2.7 V			10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D256800BEL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX8	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D1G160ATL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		64MX16	64M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D256160BT-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.6 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.009 Amp	2,4,8	22.22 mm	.5 ns
HYB25D512160CT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D512400CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.6		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		128MX4	128M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.5 ns
HYB25D256160CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	215 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e3			.005 Amp	2,4,8	22.22 mm	.7 ns
HYB25D256800CEL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX8	32M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e3					22.22 mm	.8 ns
HYB25D256800BFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		32MX8	32M		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.75 ns
HYB25D128800CT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	215 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0045 Amp	2,4,8	22.22 mm	.7 ns
HYB25D512160AE-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX16	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D128400AT-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	22.22 mm	.75 ns
HYB25D512800BT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX8	64M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	22.22 mm	.7 ns
HYB25D1G160AEL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		64MX16	64M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.7 ns
HYB25D256800BEL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX8	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D128800EL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		16MX8	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D256400BTL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	225 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.008 Amp	2,4,8	22.22 mm	.75 ns
HYB25D1G800AF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D512400AE-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		128MX4	128M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.8 ns
HYB25D256160BTL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.6 V	AUTO/SELF REFRESH	e0			.009 Amp	2,4,8	22.22 mm	.5 ns
HYB25D256400CFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, FINE PITCH			.8 mm	70 Cel		64MX4	64M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V			8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.75 ns
HYB25D128800AE-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		16MX8	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D256800CF-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		32MX8	32M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e1					12 mm	.5 ns
HYB25D1G400AT-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		268435456 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		256MX4	256M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D1G800AFL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D512400ATL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	128MX4	128M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.018 Amp	2,4,8	22.22 mm	.7 ns
HYB25D256800AT-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX8	32M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.02 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128800CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.6		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		16MX8	16M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.5 ns
HYB25D512400AE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		128MX4	128M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.7 ns
HYB25DC128160CF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		8MX16	8M		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						12 mm	.7 ns
HYB25D1G400AF-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256MX4	256M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D256160CE-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		16MX16	16M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e3					22.22 mm	.75 ns
HYB25D256400T-7.5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.02 Amp	2,4,8	22.22 mm	.75 ns
HYB25D1G800AT-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		128MX8	128M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D256800BTL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	225 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX8	32M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.008 Amp	2,4,8	22.22 mm	.75 ns
HYB25D512160AE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX16	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.