DDR3 DRAM DRAM 2,068

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT18KSF51272PDZ-1G4XX	Micron Technology	DDR3 DRAM	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		524288 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		512KX72	512K	0 Cel		DUAL	1	R-XDMA-N240	1.45 V				Not Qualified	37748736 bit	1.283 V	AUTO/SELF REFRESH
PRN512M8V80AGDRHF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
EDJ5304AASE-AE-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		4	GRID ARRAY						128MX4	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
SUU256M16V90BG8LY-125TP	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V						8	13.5 mm
PRA256M8V79DG9GQF-15E	Micron Technology	DDR3 DRAM
EDJ5308AASE-DG-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		8	GRID ARRAY						64MX8	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
SUU512M8V00HG8DA-125DG	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V		800 MHz			4294967296 bit	1.425 V						8
EDJ2108DEBG-JS-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					11 mm
EDJ4208BFBG-GN-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						10.6 mm	20 ns
EDJ1108BFSE-GL-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					10.6 mm	.225 ns
PRM512M8V00HG8GQF-125	Micron Technology	DDR3 DRAM
SGG1024M4V91AG8RAF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	10.5 mm		4294967296 bit	1.425 V						8	12 mm
PRN512M8V80BG8RHF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
PRN256M8V69AG8GKF-15E	Micron Technology	DDR3 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	9 mm		2147483648 bit	1.425 V	SELF REFRESH					8	11.5 mm
EDJ4208BFBG-DJ-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						10.6 mm	20 ns
SGG256M16V91AG8REF-15E	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	666.66 MHz	10 mm		4294967296 bit	1.425 V						8	14 mm
EDJ4208BASE-GN-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		330 mA	536870912 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	4294967296 bit						.02 Amp	4,8		.225 ns
SGG256M16V91AG8GPF-107	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	934.5 MHz	9 mm		4294967296 bit	1.425 V						8	14 mm
SGG512M8V91AG8RGF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
EDJ1116DJBG-MU-F	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	1069 MHz	7.5 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH					8	13.5 mm
EDFA164A1PF-GD-F	Micron Technology	DDR3 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX64	256M			BOTTOM	1	S-PBGA-B220	1.3 V	.99 mm		14 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			14 mm
SGG256M16V91AG8GPF-187E	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	534.7 MHz	9 mm		4294967296 bit	1.425 V						8	14 mm
SUM256M16V00HG8TW-125TP	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V		800 MHz			4294967296 bit	1.425 V						8
EDJ2104BDBG-8C-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78			400 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.4 ns
EDJ4216BFBG-DJ-F	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M			BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						13.5 mm	20 ns
SGG512M8V91AG8RGF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
PRN512M8V70SGDRAF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	10 mm		4294967296 bit	1.425 V						8	12 mm
EDJ4208BASE-AE-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	536870912 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	4294967296 bit						.02 Amp	4,8		.3 ns
SGG1024M4V91AG8RHF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
MT18KSF51272PDZ-1G6P1	Micron Technology	DDR3 DRAM	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		4 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
SGG512M8V70SG8RAF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	10 mm		4294967296 bit	1.425 V						8	12 mm
EDJ4204BASE-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	1073741824 words	4,8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	4294967296 bit						.02 Amp	4,8		.255 ns
EDJ2108BDBG-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		170 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.255 ns
MT18KSF1G72PDZ-1G6XX	Micron Technology	DDR3 DRAM	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
SUU256M16V00HG8TW-125TP	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V		800 MHz			4294967296 bit	1.425 V						8
MT18KSF1G72PDZ-1G6P1	Micron Technology	DDR3 DRAM	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
PRN256M8V89CG8GQF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	667 MHz	8 mm		2147483648 bit	1.425 V	SELF REFRESH					4,8	9.6 mm
EDJ2108DEBG-MQ-F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					11 mm	.18 ns
SGG512M8V91AG8RAF-125	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	10.5 mm		4294967296 bit	1.425 V						8	12 mm
PRN1024M4V91AG8RHF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
SGG512M8V91AG8RAF-107	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	934.5 MHz	10.5 mm		4294967296 bit	1.425 V						8	12 mm
SUU512M8V90BG8RG-125DG	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
SGG512M8V91AG8RHF-15E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	666.66 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
PRN256M16V91AG8REF-125	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm	800 MHz	10 mm		4294967296 bit	1.425 V						8	14 mm
EDJ2108BCSE-AE-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		235 mA	268435456 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	2147483648 bit						.015 Amp	4,8		.3 ns
SGG1024M4V91AG8RGF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
SGG512M8V91AG8RHF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.575 V	1.2 mm	534.7 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
EDJ2108DEBG-GN-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			268435456 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	2147483648 bit							4,8		.225 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.