DDR3 DRAM DRAM 2,068

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41J512M4DA-15EAIT:K	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						10.5 mm
MT41J512M4DA-125AAT:J	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						10.5 mm
MT41J128M16JT-15EAIT:K	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41J256M8HX-187E:D	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	335 mA	268435456 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	533 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	11.5 mm	.3 ns
MT41J128M16JT-107IT:K	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41J512M4DA-187E:J	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					10.5 mm
MT41J512M4THR-25:F	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J512M4HX-125AIT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						11.5 mm
MT41J1G4THD-25E	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX4	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm	2.5 ns
MT41J64M16LA-25E:D	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT41J128M8JP-093IT:G	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH						11.5 mm
MT41J128M8HX-15EIT:E	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY			.8 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						11.5 mm
MT41J1G4RH-107IT:E	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						10.5 mm
MT41J256M8DA-187EAIT:M	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						10.5 mm
MT41J256M4HX-187:E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY			.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						11.5 mm
MT41J256M8HX-093AIT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						11.5 mm
MT41J512M4DA-107:J	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					10.5 mm
MT41J128M8HX-15EIT:B	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J256M8HX-093:D	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						11.5 mm
MT41J2G4THE-107:D	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		10.5 mm		8589934592 bit	1.425 V	SELF REFRESH						12 mm
MT41J128M8JP-25IT:F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY			.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						11.5 mm
MT41J512M4THV-187:D	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J256M8DA-093:K	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	171 mA	268435456 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	933 MHz	8 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	10.5 mm	.18 ns
MT41J256M4HX-125FIT:B	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J256M8DA-093:M	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					10.5 mm
MT41J64M16LA-187E:E	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY			.8 mm	85 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT41J512M8THU-25E	Micron Technology	DDR3 DRAM		82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			32MX8	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm	2.5 ns
MT41J64M16JT-15E:E	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY			.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41J256M8DA-107:J	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					10.5 mm
MT41J512M4DA-187EAAT:J	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						10.5 mm
MT41J1G8TRF-15E:E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9.5 mm		8589934592 bit	1.425 V	SELF REFRESH						11.5 mm
MT41J512M4THV-15:D	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J128M16HA-15EXIT:D	Micron Technology	DDR3 DRAM		96	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY						128MX16	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V					2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1
MT41J128M16HA-125AAT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J1G4RA-093IT:D	Micron Technology	DDR3 DRAM
MT41J4G4SMA-125:E	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.5		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.45 mm		9.5 mm		17179869184 bit	1.425 V	SELF REFRESH						11.5 mm
MT41J64M16LA-125AT:B	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					15.5 mm
MT41J256M4JP-125FIT:F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY			.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						11.5 mm
MT41J256M4HX-15AT:E	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY			.8 mm	105 Cel		256MX4	256M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						11.5 mm
MT41J256M8HX-125AAT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J256M8DA-125IT:M	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					10.5 mm
MT41J64M16JT-125:E	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY			.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						14 mm
MT41J256M8THV-15:F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J512M4JE-187:A	Micron Technology	DDR3 DRAM		82	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX4	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.2 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT41J128M8JP-187EAT:F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX8	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J512M8THU-187E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	445 mA	536870912 words		YES	COMMON	1.5	1.5	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm	533 MHz	12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1			.035 Amp		15 mm
MT41J128M8BY-15:E	Micron Technology	DDR3 DRAM	OTHER	86	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY			.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B86		1.575 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH						15.5 mm
MT41J256M4JP-15:F	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	315 mA	268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.125 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.