DDR3L DRAM MODULE DRAM 149

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KVR16LS11S6/2	Kingston Technology Company	DDR3L DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	4,8	NO		1.35		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	1.28 V	0 Cel		DUAL	1	R-XDMA-N204	1.45 V	30.13 mm				17179869184 bit	1.28 V	ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY					4,8	67.6 mm
HX316LS9IBK2/8	Kingston Technology Company	DDR3L DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	2	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	4,8	NO		1.35		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	1.28 V	0 Cel		DUAL	1	R-XDMA-N204	1.45 V	30.13 mm				34359738368 bit	1.28 V	ALSO OPERATES AT 1.5V ; PROGRAMMABLE CAS LATENCY					4,8	67.6 mm
SQR-SD3I-8G1K6SNLB	Advantech	DDR3L DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words				1.35		1	MICROELECTRONIC ASSEMBLY				85 Cel		8GX1	8G		-40 Cel		DUAL	1	R-XDMA-N204						8589934592 bit
SQR-SD3M-8G1K6SNLB	Advantech	DDR3L DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words				1.35		1	MICROELECTRONIC ASSEMBLY				85 Cel		8GX1	8G		-20 Cel		DUAL	1	R-XDMA-N204						8589934592 bit
SQR-SD3M-8G1K8SNLB	Advantech	DDR3L DRAM MODULE		204	DIMM		RECTANGULAR	UNSPECIFIED		NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words				1.35		8	MICROELECTRONIC ASSEMBLY				85 Cel		8GX8	8G		-20 Cel		DUAL	1	R-XDMA-N204						68719476736 bit
MT8KTF51264HZ-1G9P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			.45 mm	70 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX		30	260			67.6 mm
MT4KTF25664HZ-1G9P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel		256MX64	256M		0 Cel		ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm		3.8 mm		17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		30	260			67.6 mm
MT16KTF1G64HZ-1G6N1	Micron Technology	DDR3L DRAM MODULE
K4B4G0846B-HYH9T	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	536870912 words	4,8		COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.255 ns
K4B4G0846B-HYK0T	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		170 mA	536870912 words	4,8		COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.225 ns
M391B2873GB0-YF8	Samsung	DDR3L DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	900 mA	134217728 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.15 mm	533 MHz	4 mm	Not Qualified	9663676416 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX			260	.09 Amp		133.35 mm	.3 ns
M391B5673GB0-H9	Samsung	DDR3L DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		256MX72	256M		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.15 mm		4 mm		19327352832 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
K4B4G0846B-HYK00	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		170 mA	536870912 words	4,8		COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.225 ns
M391B5673GB0-K0	Samsung	DDR3L DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		256MX72	256M		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.15 mm		4 mm		19327352832 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
K4B4G0846B-HYF8T	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	536870912 words	4,8		COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.3 ns
K4B4G0446B-HYK00	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	1073741824 words	4,8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G		0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.225 ns
M391B5673GB0-YF8	Samsung	DDR3L DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1008 mA	268435456 words		YES	COMMON	1.35	1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.15 mm	533 MHz	4 mm	Not Qualified	19327352832 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX				.18 Amp		133.35 mm	.3 ns
K4B4G0446B-HYH9T	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	1073741824 words	4,8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G		0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.255 ns
K4B4G0846B-HYH90	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	536870912 words	4,8		COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.255 ns
K4B4G0446B-HYH90	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		160 mA	1073741824 words	4,8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G		0 Cel		BOTTOM		R-PBGA-B78			667 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.255 ns
K4B4G0446B-HYF80	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	1073741824 words	4,8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G		0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.3 ns
M391B2873GB0-H9	Samsung	DDR3L DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		128MX72	128M		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.15 mm		4 mm		9663676416 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
K4B4G0846B-HYF80	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	536870912 words	4,8		COMMON	1.35	1.35	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.3 ns
K4B4G0446B-HYK0T	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	1073741824 words	4,8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G		0 Cel		BOTTOM		R-PBGA-B78			800 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.225 ns
M391B2873GB0-K0	Samsung	DDR3L DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		128MX72	128M		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.15 mm		4 mm		9663676416 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
K4B4G0446B-HYF8T	Samsung	DDR3L DRAM MODULE	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	1073741824 words	4,8		COMMON	1.35	1.35	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G		0 Cel		BOTTOM		R-PBGA-B78			533 MHz		Not Qualified	4294967296 bit						.015 Amp	4,8		.3 ns
MT18KDF51272PTZ-1G6P1	Micron Technology	DDR3L DRAM MODULE
MT36KSZF51272PDZ-80CF1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M		0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.45 V				Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH	e4
MT9KSF25672PZ-1G6XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words				1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M		0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.45 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.283 V	AUTO REFRESH	e4					133.35 mm
MT4KTF25664AZ-1G6P1	Micron Technology	DDR3L DRAM MODULE
EBJ34LH4E6PA-GN-F	Micron Technology	DDR3L DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	8220 mA	4294967296 words		YES	COMMON	1.35		72	MICROELECTRONIC ASSEMBLY	DIMM240,40		1 mm	95 Cel		4GX72	4G		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.35 mm		8.5 mm		309237645312 bit	1.283 V							133.35 mm
MT18KSF1G72PZ-1G4XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT18KSF1G72PZ-1G6N1	Micron Technology	DDR3L DRAM MODULE		240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm	800 MHz	4 mm		77309411328 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					8	133.35 mm
MT9KSF51272PZ-1G6P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		4 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT18KDF51272PDZ-1G4P1	Micron Technology	DDR3L DRAM MODULE
MT72KSZS2G72PZ-1G4F1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G		0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.45 V				Not Qualified	154618822656 bit	1.283 V	AUTO/SELF REFRESH	e4
MT9KSF12872PZ-1G6XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M		0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.45 V	4 mm		30.175 mm	Not Qualified	9663676416 bit	1.283 V	AUTO REFRESH	e4					133.35 mm
MT72KSZS2G72PZ-1G4XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G		0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.45 V				Not Qualified	154618822656 bit	1.283 V	AUTO/SELF REFRESH	e4
MT18KSF51272PZ-1G1XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm	534.7 MHz	4 mm	Not Qualified	38654705664 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					8	133.35 mm
MT4KTF25664HZ-1G6XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M		0 Cel		DUAL	1	R-XDMA-N204	1.575 V	30.15 mm		3.8 mm		17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						67.6 mm
MT18KSF25672PZ-1G4F1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M		0 Cel		DUAL	1	R-XDMA-N240	1.45 V				Not Qualified	19327352832 bit	1.283 V	AUTO/SELF REFRESH
MT9KSF12872PZ-1G1XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M		0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.45 V	4 mm		30.175 mm	Not Qualified	9663676416 bit	1.283 V	AUTO REFRESH	e4					133.35 mm
EBJ34LH4E6PA-DJ-F	Micron Technology	DDR3L DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	7820 mA	4294967296 words		YES	COMMON	1.35		72	MICROELECTRONIC ASSEMBLY	DIMM240,40		1 mm	95 Cel		4GX72	4G		0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.35 mm		8.5 mm		309237645312 bit	1.283 V							133.35 mm
MT72KSZS1G72PZ-1G1F1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G		0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.45 V				Not Qualified	77309411328 bit	1.283 V	AUTO/SELF REFRESH	e4
MT18KSF1G72HZ-1G4P1	Micron Technology	DDR3L DRAM MODULE
MT36KSZF1G72PDZ-1G4XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G		0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		7.25 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX	e4					133.35 mm
MT16KTF51264HZ-1G6XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M		0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm				34359738368 bit	1.283 V	AUTO/SELF REFRESH	e4					67.6 mm
MT36KSZF51272PDZ-1G1XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M		0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		7.25 mm	Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX	e4					133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.