EDO DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TC51V16405CST-50	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16777216 bit			e0	.0005 Amp		50 ns
TC5118325BJ-70	Toshiba	EDO DRAM	COMMERCIAL	70	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words			5		32	SMALL OUTLINE				.8 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J70	5.5 V	3.7 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		28.57 mm	70 ns
TC5164805BFTS-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0002 Amp	20.95 mm	50 ns
TC5117445CSJ-60	Toshiba	EDO DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.7 mm	7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			18.42 mm	60 ns
TC5117405CST-60	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			17.14 mm	60 ns
TC51V16165CFT-60	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.95 mm	60 ns
TC5165805AFT-40	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.95 mm	40 ns
TC5164805BJ-40	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	8388608 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0005 Amp	20.96 mm	40 ns
TC51V17405BFT-60	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16777216 bit			e0	.0005 Amp		60 ns
TC5165165AJ-50	Toshiba	EDO DRAM	COMMERCIAL	50	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			3.3		16	SMALL OUTLINE				.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J50	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.96 mm	50 ns
TC51V16165BFT-70	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44				Not Qualified	16777216 bit			e0	.0005 Amp		70 ns
TC51V17405CSJ-50	Toshiba	EDO DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			3.3		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24	3.6 V	3.7 mm	7.7 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS /HIDDEN REFRESH	e0		17.15 mm	50 ns
TC51V18325BJ-60	Toshiba	EDO DRAM	COMMERCIAL	70	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words			3.3		32	SMALL OUTLINE				.8 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J70	3.6 V	3.7 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		28.57 mm	60 ns
TC514265DFT-50	Toshiba	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	4194304 bit			e0	.001 Amp		50 ns
TC5165805AJ-60	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.96 mm	60 ns
TC51V18165BJS-70	Toshiba	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		145 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J42				Not Qualified	16777216 bit			e0	.0002 Amp		70 ns
TC5164165BFT-50	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0005 Amp	20.95 mm	50 ns
TC5165165AJ-60	Toshiba	EDO DRAM	COMMERCIAL	50	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			3.3		16	SMALL OUTLINE				.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J50	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.96 mm	60 ns
TC514265DJS-50	Toshiba	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		130 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J40				Not Qualified	4194304 bit			e0	.0002 Amp		50 ns
TC5164165BFTS-50	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0002 Amp	20.95 mm	50 ns
TC51V18165BFTS-60	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		175 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44				Not Qualified	16777216 bit			e0	.0002 Amp		60 ns
TC5164805AJ-40	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH	e0		20.96 mm	40 ns
TC5164405AJS-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN/SELF REFRESH			20.96 mm	50 ns
TC5164805AJS-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0		20.96 mm	50 ns
TC5165165AFT-50	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	4194304 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	8	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0005 Amp	20.95 mm	50 ns
TC5117405BST-60	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16777216 bit			e0	.001 Amp		60 ns
TC5165405AFT-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words			3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.95 mm	50 ns
TC5117805CJ-60	Toshiba	EDO DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.7 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY CAS BEFORE RAS /HIDDEN REFRESH			18.42 mm	60 ns
TC51V4265DFTS-60	Toshiba	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEELF REFRESH	e0		18.41 mm	60 ns
TC5164165AFT-40	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	160 mA	4194304 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	8	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH	e0	.0005 Amp	20.95 mm	40 ns
TC5118165CJ-60	Toshiba	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	5.5 V	3.7 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			27.31 mm	60 ns
TC5116105BST-50	Toshiba	EDO DRAM		24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING			16777216 words			5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm			16MX1	16M			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V				18.41 mm	50 ns
TC5165405AJ-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words			3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.96 mm	50 ns
TC5117405CST-50	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			17.14 mm	50 ns
TC5165805AFT-60	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.95 mm	60 ns
TC5116165CFT-50	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.95 mm	50 ns
TC5165165BFT-40	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0005 Amp	20.95 mm	40 ns
TC5117405BST-70	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		95 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24				Not Qualified	16777216 bit			e0	.001 Amp		70 ns
TC5117445CSJ-50	Toshiba	EDO DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.7 mm	7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			18.42 mm	50 ns
TC5164405AJS-40	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN/SELF REFRESH			20.96 mm	40 ns
TC5165165AFT-60	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.95 mm	60 ns
TC5164165AJ-40	Toshiba	EDO DRAM	COMMERCIAL	50	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			3.3		16	SMALL OUTLINE				.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-J50	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH			20.96 mm	40 ns
TC5165805AFT-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.95 mm	50 ns
TC51V17805CFT-50	Toshiba	EDO DRAM	COMMERCIAL	28	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words			3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/ CAS BEFORE RAS/HIDDEN REFRESH			18.41 mm	50 ns
TC5164805AJS-40	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0		20.96 mm	40 ns
TC5165805AJ-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.96 mm	50 ns
TC5118165BFT-70	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		150 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44				Not Qualified	16777216 bit			e0	.001 Amp		70 ns
TC5164405AFTS-40	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN/SELF REFRESH			20.95 mm	40 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.