EDO DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM44V16004CK-5TE	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	67108864 bit			e0			.0005 Amp		50 ns
K4E660412D-JC50	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.96 mm	50 ns
KM416V254DT-7	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	65 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH	e0			.0005 Amp	18.41 mm	70 ns
KM44V1004CJ-L8	Samsung	EDO DRAM	COMMERCIAL	24	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	50 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	3 V		e0			.0001 Amp	15.88 mm	80 ns
KM44V16104AK-L5	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	150 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0005 Amp	20.96 mm	50 ns
KM48V514DT-L6	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	524288 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0001 Amp	18.41 mm	60 ns
K4E151612D-JC50T	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		140 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-J42					Not Qualified	16777216 bit						.0005 Amp		50 ns
K4E641612C-TL450	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH					20.95 mm	45 ns
KM48V8004BK-L4	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		140 mA	8388608 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL		R-PDSO-J32	3				Not Qualified	67108864 bit			e0			.0003 Amp		40 ns
KM44C4104ASR-6	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	17.14 mm	60 ns
KM44V16104CK-6M	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	67108864 bit			e0			.0005 Amp		60 ns
KM44V1004CP-8	Samsung	EDO DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	50 mA	1048576 words	NO	COMMON	3.3	3.3	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		3.6 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	26.4 mm	80 ns
K4E170412C-BC60	Samsung	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	17.15 mm	60 ns
K4E660412C-TC60	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words			3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.95 mm	60 ns
KM48V8104J-L5	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.96 mm	50 ns
K4E641612C-TC45R0	Samsung	EDO DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	4194304 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50					Not Qualified	67108864 bit			e0			.0005 Amp		45 ns
KM44C16104BS-6K	Samsung	EDO DRAM	COMMERCIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	67108864 bit			e0			.001 Amp		60 ns
K4Q153212M-JL50	Samsung	EDO DRAM	COMMERCIAL	70	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words	YES		3.3		32	SMALL OUTLINE			.8 mm	70 Cel			512KX32	512K	0 Cel		DUAL	1	R-PDSO-J70		3.6 V	3.61 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH					28.575 mm	50 ns
K4E171612C-JC45	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0005 Amp	27.31 mm	45 ns
KM44C4004ASR-8	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	17.14 mm	80 ns
KM48V2004ALLJ-7	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	18.415 mm	70 ns
KM416V254BJ-8	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	262144 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	26.04 mm	80 ns
K4E151611C-T4500	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm		16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.95 mm	45 ns
K4E160412C-BC60	Samsung	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	17.15 mm	60 ns
KM44C4104AT-6	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	18.41 mm	60 ns
K4E151612D-JC600	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		130 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-J42					Not Qualified	16777216 bit						.0005 Amp		60 ns
K4E640412D-TC450	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH					20.95 mm	45 ns
KM48V514DLJ-6	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel		DUAL	2	R-PDSO-J28		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.42 mm	60 ns
KM48V2004BS-L7	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.34	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp	18.41 mm	70 ns
KM48V8004R-F6	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2-R	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH					20.95 mm	60 ns
KM48C514DJ-L4	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	524288 words	YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.00015 Amp	18.42 mm	40 ns
KM416V4004BS-L5K	Samsung	EDO DRAM	COMMERCIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50					Not Qualified	67108864 bit			e0			.0003 Amp		50 ns
K4E660812C-JL600	Samsung	EDO DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		30	225		20.96 mm	60 ns
KM44V4104ALLS-6	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	17.14 mm	60 ns
KM416V1204AT-L6	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	150 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp	18.41 mm	60 ns
K4E660812B-TC60	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	8388608 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.95 mm	60 ns
KM48C514BJ-L6	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	524288 words	YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			.00015 Amp	18.42 mm	60 ns
KM416C254DLT-5	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.00015 Amp	18.41 mm	50 ns
KM48C2104ALT-8	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp	18.41 mm	80 ns
K4E170812C-BL50	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp	18.42 mm	50 ns
K4E660812D-TI60T	Samsung	EDO DRAM		32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	8388608 words	YES	COMMON	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm		67108864 bit	3 V					.001 Amp	20.95 mm	60 ns
KM44C4004AK-7	Samsung	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	17.145 mm	70 ns
K4E660811B-JC60	Samsung	EDO DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.96 mm	60 ns
K4E661612B-TC500	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		30	240		20.95 mm	50 ns
KM416V254BLLJ-6	Samsung	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	262144 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J40		3.6 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0001 Amp	25.535 mm	60 ns
KM416C254BLT-7	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	18.41 mm	70 ns
KM44C4105CS-6	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP28,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	18.41 mm	60 ns
K4E660412E-TC60	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.95 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.