EDO DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K4E641612D-TI50	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.95 mm	50 ns
KM48V8004CK-5	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	8388608 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.96 mm	50 ns
K4E170811C-BC500	Samsung	EDO DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel			2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28		5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.42 mm	50 ns
KM44V4004ASR-8	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	17.14 mm	80 ns
KM44C4104ASLT-8	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	18.41 mm	80 ns
KM416C254BLTR-7	Samsung	EDO DRAM	COMMERCIAL	40	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	18.41 mm	70 ns
K4E640812D-TI45	Samsung	EDO DRAM	INDUSTRIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	8388608 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.95 mm	45 ns
K4E151612C-TL500	Samsung	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		140 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-G44					Not Qualified	16777216 bit						.0002 Amp		50 ns
K4E660812C-JC45	Samsung	EDO DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.96 mm	45 ns
KM44C4004ALLTR-5	Samsung	EDO DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	18.41 mm	50 ns
K4E641611D-TC50	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		5.5 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	20.95 mm	50 ns
KM44C16004BS-6K	Samsung	EDO DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	16777216 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	67108864 bit			e0			.001 Amp		60 ns
KM44C1004CSLP-8	Samsung	EDO DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0001 Amp	24.56 mm	80 ns
K4E660812B-TC600	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		30	240		20.95 mm	65 ns
KM416V1204CT-5	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.95 mm	50 ns
K4E641612D-TP60T	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G50					Not Qualified	67108864 bit			e0			.0002 Amp		60 ns
K4E641612B-TC60M0	Samsung	EDO DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50					Not Qualified	67108864 bit			e0			.0005 Amp		60 ns
K4E660412B-JC60	Samsung	EDO DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words			3.3		4	SMALL OUTLINE			1.27 mm	70 Cel			16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.96 mm	60 ns
KM416C1204AR-L8	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0003 Amp	20.95 mm	80 ns
KM48C514BLTR-6	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	18.41 mm	60 ns
K4E151611C-JC60T	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		130 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-J42					Not Qualified	16777216 bit						.001 Amp		60 ns
K4E151612C-JL500	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		140 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-J42					Not Qualified	16777216 bit						.0002 Amp		50 ns
K4E641612C-TL45	Samsung	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	4194304 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0002 Amp	20.95 mm	45 ns
K4E171612C-TC45	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0005 Amp	20.95 mm	45 ns
KM44V16004AK-L6	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp	20.96 mm	60 ns
KM48C2004ASLJ-5	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	18.42 mm	50 ns
K4E151611D-JC45T	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		150 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-J42					Not Qualified	16777216 bit						.001 Amp		45 ns
KM44C1004CLT-8	Samsung	EDO DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	55 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp	17.14 mm	80 ns
K4E661612E-TI45	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words			3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			4MX16	4M	-40 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.95 mm	45 ns
K4E640411D-JC60	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	16777216 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	20.96 mm	60 ns
K4E640412B-JL50	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0003 Amp	20.96 mm	50 ns
KM48C514BTR-5	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	85 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.25 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	18.41 mm	50 ns
KM48V8004BK-6	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	8388608 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.96 mm	60 ns
K4E660812C-JC50	Samsung	EDO DRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel			8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.96 mm	50 ns
KM44V1004CT-L6	Samsung	EDO DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	60 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP20/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		3.6 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	3 V		e0			.0001 Amp	17.14 mm	60 ns
K4E160411C-BL60	Samsung	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.00025 Amp	17.15 mm	60 ns
KM44C1005CT-L6	Samsung	EDO DRAM	COMMERCIAL	24	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		75 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL		R-PDSO-G24	3				Not Qualified	4194304 bit			e0			.0002 Amp		60 ns
KM48V2004ALT-8	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	2097152 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0003 Amp	18.41 mm	80 ns
KM416V1204AJ-F8	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	130 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J42		3.6 V	3.56 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	27.305 mm	80 ns
KM44V16004BS-5	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	16777216 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.95 mm	50 ns
K4E640412D-TC500	Samsung	EDO DRAM	COMMERCIAL	32	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel			16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH					20.95 mm	50 ns
KM48C2004ALLT-7	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	2097152 words	YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	18.41 mm	70 ns
KM48V8004BK-5TM	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	8388608 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	67108864 bit			e0			.0005 Amp		50 ns
K4E171612C-JC50T	Samsung	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-J42					Not Qualified	16777216 bit						.0005 Amp		50 ns
K4E160411D-BC50	Samsung	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	17.15 mm	50 ns
KM48V8004J-F7	Samsung	EDO DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH					20.96 mm	70 ns
KM416C1204AR-L7	Samsung	EDO DRAM	COMMERCIAL	44	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	150 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0003 Amp	20.95 mm	70 ns
KM48C2104AT-7	Samsung	EDO DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	18.41 mm	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.