EDO DRAM DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

TMS417809A-50DGC

Texas Instruments

EDO DRAM

COMMERCIAL

28

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

2097152 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

.001 Amp

50 ns

TMS416169-60DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

90 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

27.305 mm

60 ns

TMS426169-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

80 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

27.305 mm

70 ns

TMS418169-60DGE

Texas Instruments

EDO DRAM

COMMERCIAL

44

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

190 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

20.95 mm

60 ns

TMS426169AP-50DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

130 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

27.305 mm

50 ns

TMS464409-40DGC

Texas Instruments

EDO DRAM

COMMERCIAL

32

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

GULL WING

ASYNCHRONOUS

160 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

20.95 mm

40 ns

TMS416409A-70DGA

Texas Instruments

EDO DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

80 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.14 mm

70 ns

TMS45169-70DGE

Texas Instruments

EDO DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

160 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

70 ns

TMS426169A-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

100 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

27.305 mm

70 ns

TMS428169P-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

180 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

27.305 mm

70 ns

TMS465169P-60DGE

Texas Instruments

EDO DRAM

COMMERCIAL

50

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

GULL WING

ASYNCHRONOUS

110 mA

4194304 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

20.95 mm

60 ns

TMS428169P-60DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

190 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

27.305 mm

60 ns

TMS416409-60DJ

Texas Instruments

EDO DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

60 ns

TMS418169A-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

J BEND

ASYNCHRONOUS

150 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

27.305 mm

70 ns

TMS464169-60DGE

Texas Instruments

EDO DRAM

COMMERCIAL

50

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

GULL WING

ASYNCHRONOUS

100 mA

4194304 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

20.95 mm

60 ns

TMS426409AP-50DGA

Texas Instruments

EDO DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH

17.14 mm

50 ns

TMS427409AP-60DJ

Texas Instruments

EDO DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

YES

3.3

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

3.6 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH

17.145 mm

60 ns

TMS417809A-60DGC

Texas Instruments

EDO DRAM

COMMERCIAL

28

TSOP

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

2097152 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-G28

Not Qualified

16777216 bit

.001 Amp

60 ns

TMS44409-60DGA

Texas Instruments

EDO DRAM

COMMERCIAL

20

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

GULL WING

ASYNCHRONOUS

105 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE

TSSOP20/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.14 mm

60 ns

TMS417809A-60DZ

Texas Instruments

EDO DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

110 mA

2097152 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

18.415 mm

60 ns

TMS416809-60DZ

Texas Instruments

EDO DRAM

COMMERCIAL

28

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

18.415 mm

60 ns

TMS428169-80DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

170 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

27.305 mm

80 ns

TMS417409A-70DJ

Texas Instruments

EDO DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

SYNCHRONOUS

100 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

70 ns

TMS417809-80DZ

Texas Instruments

EDO DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

18.415 mm

80 ns

TMS464169P-50DGE

Texas Instruments

EDO DRAM

COMMERCIAL

50

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

GULL WING

ASYNCHRONOUS

110 mA

4194304 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

20.95 mm

50 ns

TMS45169P-70DGE

Texas Instruments

EDO DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

160 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

.00035 Amp

70 ns

TMS427409A-70DGA

Texas Instruments

EDO DRAM

COMMERCIAL

24

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

SYNCHRONOUS

90 mA

4194304 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.14 mm

70 ns

TMS416169-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

80 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

27.305 mm

70 ns

TMS418169A-60DZR

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

MOS

J BEND

ASYNCHRONOUS

160 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

27.305 mm

60 ns

LC321667BJ-80

Onsemi

EDO DRAM

COMMERCIAL

40

SOJ

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

115 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

1048576 bit

.001 Amp

80 ns

LC321667BM-70

Onsemi

EDO DRAM

COMMERCIAL

40

SOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOP40,.56

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

70 ns

LC321667BT-80

Onsemi

EDO DRAM

COMMERCIAL

40

TSOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

115 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

80 ns

LC321667BJ-70

Onsemi

EDO DRAM

COMMERCIAL

40

SOJ

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

125 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

1048576 bit

.001 Amp

70 ns

LC321667BM-80

Onsemi

EDO DRAM

COMMERCIAL

40

SOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

115 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOP40,.56

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

80 ns

LC321667BT-70

Onsemi

EDO DRAM

COMMERCIAL

40

TSOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

70 ns

HYB3164405AT-40

Infineon Technologies

EDO DRAM

COMMERCIAL

32

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

170 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0005 Amp

20.95 mm

40 ns

HYB3164405ATL-60

Infineon Technologies

EDO DRAM

COMMERCIAL

32

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

115 mA

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.0001 Amp

20.95 mm

60 ns

HYB3117405BT-50

Infineon Technologies

EDO DRAM

COMMERCIAL

24

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

120 mA

4194304 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP24/26,.36

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

17.14 mm

50 ns

HYB3117805BSJL-70

Infineon Technologies

EDO DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

2097152 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

e0

.0002 Amp

70 ns

HYB3118165BSJ-50

Infineon Technologies

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

130 mA

1048576 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J42

3.6 V

3.75 mm

10.3 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

27.43 mm

50 ns

HYB3164165BT-50

Infineon Technologies

EDO DRAM

COMMERCIAL

50

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

70 mA

4194304 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

20.95 mm

50 ns

HYB5118165BSJ-70

Infineon Technologies

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

HYB3166165BTL-60

Infineon Technologies

EDO DRAM

COMMERCIAL

50

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

155 mA

4194304 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.0002 Amp

20.95 mm

60 ns

HYB3164405J-50

Infineon Technologies

EDO DRAM

COMMERCIAL

34

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

YES

3.3

4

SMALL OUTLINE

1.27 mm

70 Cel

16MX4

16M

0 Cel

DUAL

1

R-PDSO-J34

3.6 V

3.76 mm

12.7 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

22.25 mm

50 ns

HYB3165805T-50

Infineon Technologies

EDO DRAM

COMMERCIAL

34

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

8388608 words

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

8MX8

8M

0 Cel

DUAL

1

R-PDSO-G34

3.6 V

1.2 mm

12.7 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

22.25 mm

50 ns

HYB3165405BT-60

Infineon Technologies

EDO DRAM

COMMERCIAL

32

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

90 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

20.95 mm

60 ns

HYB3117805BSJ-70

Infineon Technologies

EDO DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

2097152 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

HYB3164405AJ-40

Infineon Technologies

EDO DRAM

COMMERCIAL

32

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

170 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0005 Amp

21.08 mm

40 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.