FAST PAGE DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS464400-60DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words			3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.95 mm	60 ns
TMX4C1024-15N	Texas Instruments	FAST PAGE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	150 ns
TMS44400P-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.145 mm	70 ns
TMS416400P-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words	YES		5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH					17.14 mm	80 ns
TMS416800-60DE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					20.95 mm	60 ns
TMS426400A-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	60 ns
TMS427800A-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		90 mA	2097152 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL		R-PDSO-G28				Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp		70 ns
TMS44100-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	LSOP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, LOW PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		DUAL	1	R-PDSO-G20	5.5 V	1.27 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.14 mm	80 ns
TMS416400-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	70 ns
TMS45160DZP-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	SYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE				70 Cel		256KX16	256K	0 Cel		DUAL	1	R-PDSO-J40	5.5 V			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						70 ns
TMS417400DGA-80	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS					17.14 mm	80 ns
TMS426100-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words			3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX1	16M	0 Cel		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					17.14 mm	60 ns
SMJ418160-70HKDM	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	MOS	38535Q/M;38534H;883B	FLAT	ASYNCHRONOUS	180 mA	1048576 words	NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50	5.5 V	3.55 mm	16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	21 mm	70 ns
SMJ416100-70FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	80 mA	16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC24/28,.45	DRAMs	1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	19.685 mm	70 ns
SMJ4C1024-15SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	26.67 mm	150 ns
5962-9062201MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				22.86 mm	120 ns
TMS48C138-10DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	17.145 mm	100 ns
TMS46100-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	4194304 words	NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		DUAL	1	R-PDSO-J20	3.6 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	17.145 mm	60 ns
TMS427800-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					18.415 mm	80 ns
TMS464800P-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		8388608 words	YES		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH					20.955 mm	80 ns
5962-9062203MTX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V	4.44 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					23.085 mm	80 ns
TMS428160P-70DC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					20.95 mm	70 ns
TMS44C256-12DJL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	120 ns
TMS44410-60DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	95 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	60 ns
TMS464400P-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH					20.95 mm	70 ns
TMS46460-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	17.14 mm	60 ns
TMS46100-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	LSOP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	50 mA	4194304 words	NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE, LOW PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		DUAL	1	R-PDSO-G20	3.6 V	1.27 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	17.14 mm	80 ns
TMS4C1024-10DN	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	65 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	1.83 mm	7.47 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	16.51 mm	100 ns
SMJ44C256-15HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535	NO LEAD	SYNCHRONOUS	55 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	150 ns
TMS417800-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.415 mm	80 ns
TMS44800L-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.415 mm	70 ns
TMS44460P-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.14 mm	80 ns
TMS44400PDGA-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words	YES		5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		1MX4	1M	0 Cel		DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/SELF REFRESH					17.14 mm	70 ns
TMS44400P-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	YES		5		4	IN-LINE			1.27 mm	70 Cel		1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						80 ns
TMS44400P-60SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	YES		5		4	IN-LINE			1.27 mm	70 Cel		1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						60 ns
SMJ4C1024-10JD	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.606 mm	100 ns
SMJ44C256-15HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS	MIL-PRF-38535	NO LEAD	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	150 ns
5962-9084701MXA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	FLATPACK	FL20,.5	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-XDFP-F20	5.5 V	2.54 mm	12.45 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.78 mm	120 ns
5962-9084703MNA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	90 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		ZIG-ZAG	1	R-XZIP-T20	5.5 V	11.56 mm	2.92 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	26.67 mm	80 ns
TMS417400-80DGD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					18.41 mm	80 ns
TMS44400-70DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	LSOP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	90 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, LOW PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-G20	5.5 V	1.27 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.14 mm	70 ns
SMJ4C1024-15FQMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel		1MX1	1M	-55 Cel		DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	150 ns
TMS416100P-70DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words	YES		5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX1	16M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH					17.14 mm	70 ns
SMJ44400-15JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS REFRESH						150 ns
SMJ44400-12JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4	DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL	1	R-CDIP-T20	5.5 V	3.556 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp		120 ns
TMS44400-60DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		1MX4	1M	0 Cel		DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					17.14 mm	60 ns
5962-9062202MVX	Texas Instruments	FAST PAGE DRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-CDIP-T16	5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.32 mm	100 ns
TMS426400P-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					17.14 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.