FAST PAGE DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Length	Maximum Access Time
KMM364C400AS-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1280 mA	4194304 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.05 Amp		60 ns
KMM5361203AWG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	395 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	19.05 mm		Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.003 Amp		60 ns
KMM5364100AK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel	3-STATE	4MX36	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			50 ns
KMM5368103CKVG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		8MX36	8M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	301989888 bit	4.5 V				50 ns
KMM53216000CVG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel		16MX32	16M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			60 ns
KMM5361203AW/AWG-6	Samsung	FAST PAGE DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD			1048576 words			5		36	MICROELECTRONIC ASSEMBLY							1MX36	1M		SINGLE	1	R-XSMA-N72				Not Qualified	37748736 bit					60 ns
KMM5402000A-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1070 mA	2097152 words		COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72		Other Memory ICs	1.27 mm	70 Cel	3-STATE	2MX40	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	83886080 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.02 Amp		70 ns
KMM594000A-10	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	765 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm		Not Qualified	37748736 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.009 Amp		100 ns
KMM5322000AW-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
KMM53216000AKG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1120 mA	16777216 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp		60 ns
KMM364C1600CS-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1920 mA	16777216 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V			Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		50 ns
KMM372V3280BK4-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1540 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	50.8 mm		Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		60 ns
KMM540512B-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	524288 words		COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72		Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX40	512K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	20971520 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.02 Amp		80 ns
KMM364C213BS-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	2097152 words	NO	COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V	25.4 mm		Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		60 ns
KMM5324000AKV-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			50 ns
KMM5324000ASW-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		280 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE		R-PSMA-N72		25.4 mm		Not Qualified	134217728 bit			.002 Amp		60 ns
KMM5322100BKU-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	400 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp		60 ns
M372C0883BJ0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	8388608 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V			Not Qualified	603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		60 ns
KMM5916100T-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	16777216 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	16MX9	16M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	22.86 mm		Not Qualified	150994944 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.009 Amp		60 ns
M53210124DE2-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words	YES		5		32	MICROELECTRONIC ASSEMBLY					70 Cel		1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			50 ns
KMM5404000-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		40	MICROELECTRONIC ASSEMBLY					70 Cel		4MX40	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	167772160 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH			70 ns
KMM372C402AK-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1260 mA	4194304 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V	25.4 mm		Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.05 Amp		70 ns
KMM372V400CS2-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		4MX72	4M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			50 ns
KMM5322000W-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
M372C3280BJ0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1720 mA	33554432 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V	50.8 mm		Not Qualified	2415919104 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		50 ns
KMM5322000AWG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
KMM536512W-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD		304 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	0 Cel	SINGLE	1	R-XSMA-N72		25.4 mm		Not Qualified	18874368 bit			.004 Amp		60 ns
KMM364C410BK-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1600 mA	4194304 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V	25.4 mm		Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		70 ns
KMM372V213CK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	2097152 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	2MX72	2M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm		Not Qualified	150994944 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		50 ns
KMM5322000BVG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	736 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.016 Amp		60 ns
M53620410DW0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		4MX36	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			50 ns
KMM5324100AKG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			50 ns
KMM372C883CS-600	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		72	MICROELECTRONIC ASSEMBLY				1.27 mm	70 Cel		8MX72	8M	0 Cel	UNSPECIFIED	1	R-XXMA-N168	5.5 V	31.88 mm	2.54 mm		603979776 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; WD-MAX		133.35 mm	60 ns
KMM5402000CM-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		40	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	2MX40	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	83886080 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
KMM584000-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	4194304 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	24.13 mm		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp		80 ns
M372C3280CJ0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1720 mA	33554432 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V	50.8 mm		Not Qualified	2415919104 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		50 ns
KMM5322200WG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
KMM536512W3G-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		512KX36	512K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	18874368 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH			80 ns
M364C0803BT0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			50 ns
KMM5324000BK-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	560 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp		70 ns
KMM581020AN-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		8	MICROELECTRONIC ASSEMBLY					70 Cel		1MX8	1M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V			Not Qualified	8388608 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH			70 ns
KMM5322200WG-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			80 ns
M364C0484CT0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	4194304 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		50 ns
KMM5408000AKG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		40	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	8MX40	8M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	335544320 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			70 ns
M364C0804BT0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	540 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V			Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp		60 ns
KMM532512W-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	254 mA	524288 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.004 Amp		70 ns
KMM5322200CWG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	304 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	19.05 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp		50 ns
KMM364V124AJ-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	600 mA	1048576 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.05 Amp		60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.