GDDR1 DRAM DRAM 282

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4D263238G-GC2A	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		465 mA	4194304 words	2,4,8		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				350 MHz		Not Qualified	134217728 bit			e0			.015 Amp	2,4,8		.55 ns
K4D551638F-TC40T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		410 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M		DUAL		R-PDSO-G66	1			250 MHz		Not Qualified	268435456 bit							2,4,8
K4D261638K-TC500	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	65 Cel		8MX16	8M		DUAL	1	R-PDSO-G66		2.625 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
K4D26323QG-GC200	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M	TIN LEAD	BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm		12 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e0					12 mm	.35 ns
K4D551638D-LC33T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		450 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M		DUAL		R-PDSO-G66				300 MHz		Not Qualified	268435456 bit						.07 Amp	2,4,8		.6 ns
K4D263238G-VC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm		12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e1		260			12 mm	.55 ns
K4D551638D-TC45	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		390 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M	TIN LEAD	DUAL		R-PDSO-G66				222 MHz		Not Qualified	268435456 bit			e0			.07 Amp	2,4,8		.7 ns
K4D263238I-VC50T	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M		BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm		12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						12 mm	.7 ns
K4D551638D-LC2A0	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	2,4,8	YES	COMMON	2.8	2.8	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	16MX16	16M		DUAL	1	R-PDSO-G66		2.9 V	1.2 mm	350 MHz	10.16 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH			260	.07 Amp	2,4,8	22.22 mm	.6 ns
K4D551638F-LC50	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		380 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M		DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	268435456 bit					260		2,4,8
K4D553235F-VJ250	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.1 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1					12 mm	.45 ns
K4D553238E-EC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M		BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm		12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH						12 mm	.6 ns
K4D553238F-JC40	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM		S-PBGA-B144				250 MHz		Not Qualified	268435456 bit			e0				2,4,8		.6 ns
K4D55323QF-VC25	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	4		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144	3			400 MHz		Not Qualified	268435456 bit					260				.45 ns
K4D553238F-VC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm		12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH	e1					12 mm	.55 ns
K4D55323QF-GC36	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	4		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM		S-PBGA-B144				275 MHz		Not Qualified	268435456 bit			e0						.6 ns
K4D261638F-TC40T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		260 mA	8388608 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	8MX16	8M		DUAL		R-PDSO-G66	1			250 MHz		Not Qualified	134217728 bit						.045 Amp	2,4,8		.6 ns
K4D261638I-TC500	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	390 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M	TIN LEAD	DUAL	1	R-PDSO-G66		2.625 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0			.345 Amp	2,4,8	22.22 mm	.7 ns
K4D553235F-VC33	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		314 mA	8388608 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144	3			300 MHz		Not Qualified	268435456 bit					260		2,4,8		.55 ns
K4D553238F-EC50	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144	3			200 MHz		Not Qualified	268435456 bit					260		2,4,8		.7 ns
K4D551638F-TC50T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		380 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M		DUAL		R-PDSO-G66	1			200 MHz		Not Qualified	268435456 bit							2,4,8
K4D26323QV-VC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M		BOTTOM	1	S-PBGA-B144		2.1 V	1.4 mm		12 mm	Not Qualified	134217728 bit	1.9 V	AUTO/SELF REFRESH						12 mm	.55 ns
K4D551638F-LC40T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		410 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M	MATTE TIN	DUAL		R-PDSO-G66	1			250 MHz		Not Qualified	268435456 bit			e3				2,4,8
K4D553238F-VC2A0	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm		12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH	e1					12 mm	.55 ns
K4D263238K-FC400	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	402 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	250 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e1		260	.02 Amp	2,4,8	12 mm	.6 ns
K4D261638K-LC400	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M		DUAL	1	R-PDSO-G66		2.625 V	1.2 mm	250 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.045 Amp	2,4,8	22.22 mm	.6 ns
K4D551638D-LC50	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M		DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	268435456 bit					260		2,4,8
K4D263238G-GC33	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		424 mA	4194304 words	2,4,8		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				300 MHz		Not Qualified	134217728 bit			e0			.015 Amp	2,4,8		.55 ns
K4D553238F-JC500	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M		BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm		12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH		30	240			12 mm	.7 ns
K4D261638F-LC2A	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		400 mA	8388608 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	8MX16	8M		DUAL		R-PDSO-G66	3			350 MHz		Not Qualified	134217728 bit					260	.06 Amp	2,4,8		.6 ns
K4D551638F-LC60T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		350 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M	MATTE TIN	DUAL		R-PDSO-G66	1			166 MHz		Not Qualified	268435456 bit			e3				2,4,8
K4D26323QV-VC250	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M		BOTTOM	1	S-PBGA-B144		2.1 V	1.4 mm		12 mm	Not Qualified	134217728 bit	1.9 V	AUTO/SELF REFRESH						12 mm	.45 ns
K4D553235F-GC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	314 mA	8388608 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M		BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm	300 MHz	12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4,8	12 mm	.55 ns
K4D551638D-TC40T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		410 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M		DUAL		R-PDSO-G66				250 MHz		Not Qualified	268435456 bit						.07 Amp	2,4,8		.6 ns
K4D261638I-LC50T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	390 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M		DUAL	1	R-PDSO-G66		2.625 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.345 Amp	2,4,8	22.22 mm	.7 ns
K4D551638F-LC33	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		520 mA	16777216 words	2,4,8		COMMON	2.8	2.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	65 Cel	3-STATE	16MX16	16M		DUAL		R-PDSO-G66	3			300 MHz		Not Qualified	268435456 bit					260		2,4,8
K4D263238E-VC45	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	655 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M		BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	222 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH			260	.07 Amp	2,4,8	12 mm	.7 ns
K4D551638F-LC600	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	16MX16	16M		DUAL	1	R-PDSO-G66	3	2.625 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH					2,4,8	22.22 mm	.7 ns
K4D26323QG-GC25	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		490 mA	4194304 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				400 MHz		Not Qualified	134217728 bit			e0			.053 Amp	2,4,8		.45 ns
K4D26323QG-GC2AT	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		440 mA	4194304 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M		BOTTOM		S-PBGA-B144				350 MHz		Not Qualified	134217728 bit						.01 Amp	2,4,8		.55 ns
K4D26323QG-VC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	410 mA	4194304 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	1.9 V	1.4 mm	300 MHz	12 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	2,4,8	12 mm	.55 ns
K4D263238K-VC500	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	344 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	200 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e1		260	.02 Amp	2,4,8	12 mm	.7 ns
K4D261638K-LC40T	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M	MATTE TIN	DUAL	1	R-PDSO-G66	1	2.625 V	1.2 mm	250 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e3			.045 Amp	2,4,8	22.22 mm	.6 ns
K4D553235F-GC25T	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		368 mA	8388608 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144	1			400 MHz		Not Qualified	268435456 bit							2,4,8		.45 ns
K4D553235F-VC250	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	368 mA	8388608 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	1.9 V	1.4 mm	400 MHz	12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1				2,4,8	12 mm	.45 ns
K4D551638D-LC500	Samsung	GDDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	16MX16	16M		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH			260	.004 Amp	2,4,8	22.22 mm	.65 ns
K4D55323QF-GC22	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	4		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM		S-PBGA-B144				450 MHz		Not Qualified	268435456 bit			e0						.45 ns
K4D553238F-JC36	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM		S-PBGA-B144				275 MHz		Not Qualified	268435456 bit			e0				2,4,8		.6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.