GDDR6 DRAM DRAM 9

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length
MT61M256M32JE-12AAT:A	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16	.75 mm	105 Cel	3-STATE	256MX32	256M	-40 Cel	BOTTOM	1	R-PBGA-B180	1.2875 V	1.2 mm	1500 MHz	12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH			14 mm
MT61K256M32JE-21:T	Micron Technology	GDDR6 DRAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16	.75 mm	95 Cel	OPEN-DRAIN	256MX32	256M	0 Cel	BOTTOM	1	R-PBGA-B180	1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V			14 mm
MT61K512M32KPA-16:BTR	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	YES	COMMON	1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30		.75 mm	95 Cel		512MX32	512M	0 Cel	BOTTOM	1	R-PBGA-B180	1.3905 V	1.2 mm		12 mm	17179869184 bit	1.3095 V	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY	NOT SPECIFIED	NOT SPECIFIED	14 mm
MT61K256M32JE-19G:T	Micron Technology	GDDR6 DRAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16	.75 mm	95 Cel	OPEN-DRAIN	256MX32	256M	0 Cel	BOTTOM	1	R-PBGA-B180	1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V			14 mm
MT61K512M32KPA-16:B	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30		.75 mm	95 Cel		512MX32	512M	0 Cel	BOTTOM	1	R-PBGA-B180	1.2875 V	1.2 mm		12 mm	17179869184 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V	NOT SPECIFIED	NOT SPECIFIED	14 mm
MT61K512M32KPA-14:B	Micron Technology	GDDR6 DRAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30		.75 mm	95 Cel		512MX32	512M	0 Cel	BOTTOM	1	R-PBGA-B180	1.2875 V	1.2 mm		12 mm	17179869184 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V			14 mm
K4ZAF325BM-HC160	Samsung	GDDR6 DRAM		180		16384	RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL		536870912 words				32							512MX32	512M		BOTTOM	1	R-PBGA-B180					17179869184 bit
MT61K512M32KPA-14:BTR	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	536870912 words	YES	COMMON	1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30		.75 mm	95 Cel		512MX32	512M	0 Cel	BOTTOM	1	R-PBGA-B180	1.3905 V	1.2 mm		12 mm	17179869184 bit	1.3095 V	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY	NOT SPECIFIED	NOT SPECIFIED	14 mm
MT61M256M32JE-10AAT:A	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	268435456 words	YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	16	.75 mm	105 Cel	3-STATE	256MX32	256M	-40 Cel	BOTTOM	1	R-PBGA-B180	1.2875 V	1.2 mm	1500 MHz	12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH			14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.