LPDDR1 DRAM DRAM 1,595

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT46H32M32LGCM-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX32	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5.5 ns
MT46H128M16LFB7-75AAT:B	Micron Technology	LPDDR1 DRAM
MT46H16M32LFB5-75L:C	Micron Technology	LPDDR1 DRAM	COMMERCIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
MT46H128M32L2KQ-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm	208 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H32M32LFCM-54:A	Micron Technology	LPDDR1 DRAM	COMMERCIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	145 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX32	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	185 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5 ns
MT46H64M32LFKQ-5AAT:B	Micron Technology	LPDDR1 DRAM
MT46H64M32L2KQ-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M32LFT69M-N1002	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	141	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	2,4,8,16	YES		1.8		32	UNCASED CHIP	DIE OR CHIP			85 Cel		64MX32	64M	-40 Cel		DUAL	1	R-XUUC-N141		1.95 V		185 MHz			2147483648 bit	1.7 V	AUTO/SELF REFRESH					2,4,8,16
MT46H128M16LFCK-6:A	Micron Technology	LPDDR1 DRAM	COMMERCIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		10 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					11.5 mm	5 ns
MT46H256M32LGMA-54IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm		12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L4CM-75IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
MT46H128M32L2MC-5AIT:B	Micron Technology	LPDDR1 DRAM
MT46H128M32LGJV-54IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H128M32L2KQ-6AT:B	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H128M16LFB7-75WT:B	Micron Technology	LPDDR1 DRAM	OTHER	60	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-20 Cel		BOTTOM	1	S-PBGA-B60		1.95 V	1 mm		10 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH						10 mm	6 ns
MT46H16M16LGB5-6IT:H	Micron Technology	LPDDR1 DRAM		90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	16777216 words	2,4,8,16	YES	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	85 Cel		16MX16	16M	-40 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	8 mm		268435456 bit	1.7 V	AUTO/SELF REFRESH				.0003 Amp	2,4,8,16	13 mm
MT46H256M32L2KQ-54:A	Micron Technology	LPDDR1 DRAM	COMMERCIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	70 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H16M16LFB5-6AAT:H	Micron Technology	LPDDR1 DRAM		90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	16777216 words	2,4,8,16	YES	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	105 Cel		16MX16	16M	-40 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	8 mm		268435456 bit	1.7 V	AUTO/SELF REFRESH				.0003 Amp	2,4,8,16	13 mm
MT46H256M32R4JV-75AAT:B	Micron Technology	LPDDR1 DRAM
MT46H128M32L4JV-6AT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H128M32LFMA-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L4KQ-6AT:B	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M32LFMA-5AIT:B	Micron Technology	LPDDR1 DRAM
MT46H16M32LGBQ-54IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H64M32L4CM-6IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H16M32LFBQ-6LIT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H256M32R4JV-54AIT:B	Micron Technology	LPDDR1 DRAM
MT46H128M32L2KQ-75:A	Micron Technology	LPDDR1 DRAM	COMMERCIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	70 Cel		128MX32	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	6 ns
MT46H32M16LGBF-5IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm
MT46H16M32LGBQ-75LAAT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
MT46H256M32L4JV-54:A	Micron Technology	LPDDR1 DRAM	COMMERCIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	70 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L2MC-6:A	Micron Technology	LPDDR1 DRAM	COMMERCIAL	240	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	70 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	5 ns
MT46H256M32L4MA-5:B	Micron Technology	LPDDR1 DRAM	COMMERCIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	70 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32LGKQ-54AT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H32M32LGB5-5AIT:B	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX32	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H256M32LGMA-54AT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm		12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H128M16LFB7-75:B	Micron Technology	LPDDR1 DRAM	COMMERCIAL	60	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B60		1.95 V	1 mm		10 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	6 ns
MT46H32M32LFCM-6LIT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX32	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5.5 ns
MT46H16M32LFCG-5:B	Micron Technology	LPDDR1 DRAM	COMMERCIAL	152	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	DRAMs	.65 mm	70 Cel	3-STATE	16MX32	16M	0 Cel	MATTE TIN	BOTTOM	1	S-PBGA-B152	1	1.95 V	1 mm	200 MHz	14 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e3				2,4,8	14 mm	5 ns
MT46H128M32L4CM-54AT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H128M32LGMA-5AT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32L2CM-6:A	Micron Technology	LPDDR1 DRAM	COMMERCIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H32M16LFBF-75LAT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	6 ns
MT46H64M32LFCX-54WT:B	Micron Technology	LPDDR1 DRAM	OTHER	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-20 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H64M32L2KQ-54:A	Micron Technology	LPDDR1 DRAM	COMMERCIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	70 Cel		64MX32	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32R4JV-6:B	Micron Technology	LPDDR1 DRAM	COMMERCIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	70 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H256M32LFMA-5IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm		12 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M32L2MA-75IT:A	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm		12 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.