RAMBUS DRAM MODULE DRAM 844

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Output Characteristics	Organization	No. of Words Code	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Access Time
MC-4R96CKE6B-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		50331648 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	805306368 bit
MC-4R256CKE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	2147483648 bit
MC-4R128CKE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		67108864 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	1073741824 bit
MC-4R256CEE6C-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	2147483648 bit
MC-4R96CEE6C-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		50331648 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	805306368 bit
MC-4R64CEE6B-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	536870912 bit
MC-4R256CEE6C-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	2147483648 bit
MC-4R192CEE6C-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	1610612736 bit
MC-4R128CEE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		67108864 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	1073741824 bit
MC-4R256CEE6B-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	2147483648 bit
MC-4R256CKE6B-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	2147483648 bit
MC-4R128CEE6C-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		67108864 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	1073741824 bit
MC-4R192CEE6B-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	1610612736 bit
MC-4R192CEE6C-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	1610612736 bit
MC-4R64CEE6C-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	536870912 bit
MC-4R96CKE6B-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		50331648 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	805306368 bit
MC-4R128CKE6B-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		67108864 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	1073741824 bit
MC-4R192CKE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	1610612736 bit
MC-4R64CKE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	536870912 bit
MC-4R64CEE6C-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	536870912 bit
MC-4R256CKE6B-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	2147483648 bit
MC-4R128CEE6B-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		67108864 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	1073741824 bit
MC-4R256CEE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	2147483648 bit
MC-4R96CEE6C-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		50331648 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	805306368 bit
MC-4R64CEE6B-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	536870912 bit
MC-4R96CEE6B-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		50331648 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	805306368 bit
MC-4R64CEE6C-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	536870912 bit
MC-4R192CKE6B-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	1610612736 bit
MC-4R64CKE6B-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	536870912 bit
MC-4R192CEE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	1610612736 bit
MC-4R256CEE6B-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	2147483648 bit
MC-4R64CEE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		33554432 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	536870912 bit
MC-4R192CKE6B-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	1610612736 bit
MC-4R128CEE6B-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		67108864 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	1073741824 bit
MC-4R96CKE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		50331648 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	805306368 bit
MC-4R192CEE6C-653	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	1610612736 bit
MC-4R96CEE6C-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		50331648 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	805306368 bit
MC-4R256CEE6C-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		134217728 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	128MX16	128M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	2147483648 bit
MC-4R128CEE6C-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		67108864 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	1073741824 bit
MC-4R192CEE6B-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		100663296 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	1610612736 bit
MC-4R128CKE6B-845	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		67108864 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	64MX16	64M	DUAL		R-PDMA-N184			800 MHz	Not Qualified	1073741824 bit
MC-4R96CEE6B-745	Renesas Electronics	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		50331648 words		COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL		R-PDMA-N184			711 MHz	Not Qualified	805306368 bit
MR18R1622AF0-CK8	Samsung	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N184	1	2.63 V	800 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	45 ns
MR18R0824BN1-CG6	Samsung	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX18	32M	DUAL	1	R-XDMA-N184		2.63 V	600 MHz	Not Qualified	603979776 bit	2.37 V	SELF CONTAINED REFRESH	53.3 ns
MR16R1626MN0-CK8	Samsung	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	100663296 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	96MX16	96M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	1610612736 bit	2.37 V	SELF CONTAINED REFRESH	45 ns
KMMR16R86AC1-RK8	Samsung	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	50331648 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	48MX16	48M	DUAL	1	R-XDMA-N184		2.63 V	800 MHz	Not Qualified	805306368 bit	2.37 V	SELF CONTAINED REFRESH
MR16R1622DF0-CT9	Samsung	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	YES	COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX16	32M	DUAL	1	R-XDMA-N184	1	2.63 V	1066 MHz	Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH	32 ns
KMMR18R84C-RG6	Samsung	RAMBUS DRAM MODULE	184	DIMM	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		33554432 words		COMMON		1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm	3-STATE	32MX18	32M	DUAL		R-PDMA-N184			600 MHz	Not Qualified	603979776 bit			53 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.