STATIC COLUMN DRAM DRAM 1,115

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT4C1671TG-7LTR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	70 ns
MT4C1026-10IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	1048576 bit			e0	.001 Amp		100 ns
MT4C10017DJ-8	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	16777216 bit			e0			80 ns
MT4C4003JCN-7IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE		100 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		70 ns
MT4C4258VG-8IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	20	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP20(UNSPEC)	SRAMs		85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
MT4C4258Z-8	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	9.35 mm	2.795 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	25.295 mm	80 ns
MT4C1671TG-10LTR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	100 ns
MT4C10017Z-5IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			16777216 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24				Not Qualified	16777216 bit			e0			50 ns
MT4C4003JC-7	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE		100 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		70 ns
MT4C4003JDJW-7	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	4194304 bit			e0	.001 Amp		70 ns
MT4C10017TG-6VIT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SO(UNSPEC)	SRAMs		85 Cel	3-STATE	16MX1	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL						Not Qualified	16777216 bit			e0			60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.