SYNCHRONOUS DRAM DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

K4S56323LF-HR75

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

180 mA

8388608 words

1,2,4,8,FP

COMMON

2.5

2.5

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

268435456 bit

.0005 Amp

1,2,4,8

6 ns

K4S643232E-TC500

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

86

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

2097152 words

YES

3.3

32

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

2MX32

2M

0 Cel

DUAL

1

R-PDSO-G86

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

30

240

22.22 mm

4.5 ns

K4S561632N-LC75

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

50 mA

16777216 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

TIN BISMUTH

DUAL

1

R-PDSO-G54

3

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e6

260

.002 Amp

1,2,4,8

22.22 mm

5.4 ns

K4M511633E-PL1L0

Samsung

SYNCHRONOUS DRAM

OTHER

54

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

70 Cel

32MX16

32M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B54

3

3.6 V

1.2 mm

10 mm

Not Qualified

536870912 bit

2.7 V

AUTO/SELF REFRESH

e1

11.5 mm

7 ns

K4M281633F-RG1H0

Samsung

SYNCHRONOUS DRAM

OTHER

54

VFBGA

SQUARE

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

8MX16

8M

-25 Cel

TIN LEAD

BOTTOM

1

S-PBGA-B54

3.6 V

1 mm

8 mm

Not Qualified

134217728 bit

2.7 V

AUTO/SELF REFRESH

e0

8 mm

7 ns

K4S56163LF-ZG1L0

Samsung

SYNCHRONOUS DRAM

OTHER

54

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

YES

2.5

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

1

R-PBGA-B54

3

2.7 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

11 mm

7 ns

K4M28163PH-BC750

Samsung

SYNCHRONOUS DRAM

OTHER

54

VFBGA

4096

SQUARE

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

90 mA

8388608 words

1,2,4,8,FP

YES

COMMON

1.8

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX16

8M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

S-PBGA-B54

2

1.95 V

1 mm

133 MHz

8 mm

Not Qualified

134217728 bit

1.7 V

AUTO/SELF REFRESH

e1

.00001 Amp

1,2,4,8

8 mm

6 ns

K4M51163PC-BG750JR

Samsung

SYNCHRONOUS DRAM

COMMERCIAL EXTENDED

54

VFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

1

R-PBGA-B54

1.95 V

1 mm

10 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

11.5 mm

6 ns

K4S641622B-TL1LR0

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G54

3

100 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

6 ns

K4S641632C-TC10M0

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

7 ns

KM44S16030CT-G8H

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

16777216 words

1,2,4,8,FP

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

6 ns

K4M56323LG-HG60

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

180 mA

8388608 words

1,2,4,8,FP

COMMON

2.5

2.5

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

MATTE TIN

BOTTOM

R-PBGA-B90

1

167 MHz

Not Qualified

268435456 bit

e3

.001 Amp

1,2,4,8

5.4 ns

K4S511632B-TC750

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

33554432 words

YES

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

32MX16

32M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

30

240

22.22 mm

5.4 ns

K4S563233F-HE75

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

180 mA

8388608 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

133 MHz

Not Qualified

268435456 bit

.0005 Amp

1,2,4,8

6 ns

K4M51323LC-DN75T

Samsung

SYNCHRONOUS DRAM

COMMERCIAL EXTENDED

90

VFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

110 mA

16777216 words

1,2,4,8,FP

YES

COMMON

2.5

2.5

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX32

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

3

2.7 V

1 mm

133 MHz

11 mm

Not Qualified

536870912 bit

2.3 V

AUTO/SELF REFRESH

e1

260

.001 Amp

1,2,4,8

13 mm

5.4 ns

K4S510832D-UCL75

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

67108864 words

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

64MX8

64M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

22.22 mm

5.4 ns

K4C560838C-TCB

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

66

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

324 mA

33554432 words

2,4

YES

COMMON

2.5

2.5

8

SMALL OUTLINE, THIN PROFILE

TSSOP66,.46

DRAMs

.65 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G66

2.65 V

1.2 mm

200 MHz

10.16 mm

Not Qualified

268435456 bit

2.35 V

AUTO/SELF REFRESH

e0

.002 Amp

2,4

22.22 mm

.65 ns

K4S641632B-TC10MZ

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

7 ns

K4S641632E-TL1LT

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

6 ns

K4M56323PG-HE75T

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

140 mA

8388608 words

1,2,4,8,FP

COMMON

1.8

1.8

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

MATTE TIN

BOTTOM

R-PBGA-B90

1

133 MHz

Not Qualified

268435456 bit

e3

.0003 Amp

1,2,4,8

6 ns

K4S160822DT-FL

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

DUAL BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

95 mA

2097152 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

100 MHz

10.16 mm

Not Qualified

16777216 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

18.41 mm

6 ns

K4S563233F-FG750

Samsung

SYNCHRONOUS DRAM

OTHER

90

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

3

32

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3.6 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.7 V

AUTO/SELF REFRESH

30

240

13 mm

6 ns

K4S51323LF-EF1H0

Samsung

SYNCHRONOUS DRAM

OTHER

90

LFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

YES

2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

70 Cel

16MX32

16M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.4 mm

11 mm

Not Qualified

536870912 bit

2.3 V

AUTO/SELF REFRESH

e1

13 mm

7 ns

K4S56163LF-ZE1H

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

8192

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

155 mA

16777216 words

1,2,4,8,FP

COMMON

1.8/2.5,2.5

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B54

105 MHz

Not Qualified

268435456 bit

.0005 Amp

1,2,4,8

7 ns

K4M51163PC-BG1LT

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

8192

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

150 mA

33554432 words

1,2,4,8,FP

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

-25 Cel

MATTE TIN

BOTTOM

S-PBGA-B54

1

111 MHz

Not Qualified

536870912 bit

e3

.0003 Amp

1,2,4,8

7 ns

KM416H4031T-8

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

66

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

4194304 words

2,4,8

YES

COMMON

3.3

2.5,3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP66,.46

DRAMs

.65 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G66

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

e0

.02 Amp

2,4,8

22.22 mm

KM44S16030DT-G/FA

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

16777216 words

3.3

4

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

16MX4

16M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

22.22 mm

5.4 ns

K4S561632H-UL75T

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

130 mA

16777216 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.56,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

1,2,4,8

22.22 mm

5.4 ns

K4S56323LF-HS1H0

Samsung

SYNCHRONOUS DRAM

OTHER

90

TFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

YES

2.5

32

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

8MX32

8M

-25 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B90

3

2.7 V

1.2 mm

8 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

e1

13 mm

7 ns

K4S511632C-KC1H

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

380 mA

33554432 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

100 MHz

10.16 mm

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

.004 Amp

1,2,4,8

22.22 mm

6 ns

K4S641632A-TC12R0

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

135 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G54

83 MHz

Not Qualified

67108864 bit

e0

.002 Amp

4,8

8 ns

K4M64163PH-BG75

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

4096

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

4194304 words

1,2,4,8,FP

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

S-PBGA-B54

133 MHz

Not Qualified

67108864 bit

.0003 Amp

1,2,4,8

6 ns

K4M64163LK-RG1L

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

4096

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

100 mA

4194304 words

1,2,4,8,FP

COMMON

2.5

2.5

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-25 Cel

BOTTOM

S-PBGA-B54

3

111 MHz

Not Qualified

67108864 bit

240

.0005 Amp

1,2,4,8

7 ns

KM416S4030CT-FLZ

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

6 ns

KM44S4020BT-G9

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

44

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

111 MHz

Not Qualified

16777216 bit

e0

.002 Amp

4,8

7 ns

K4C561638C-TCDA0

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

66

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

16777216 words

YES

2.5

16

SMALL OUTLINE, THIN PROFILE

.65 mm

70 Cel

16MX16

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G66

2.65 V

1.2 mm

10.16 mm

Not Qualified

268435456 bit

2.35 V

AUTO/SELF REFRESH

e0

22.22 mm

.75 ns

KM48S8030BT-F8K

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

8388608 words

1,2,4,8,FP

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

TIN LEAD

DUAL

R-PDSO-G54

3

125 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

6 ns

K4M563233E-EC80

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

320 mA

8388608 words

1,2,4,8,FP

COMMON

3/3.3

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

70 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

125 MHz

Not Qualified

268435456 bit

.0012 Amp

1,2,4,8

6 ns

K4M56163PG-BF1L

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

8192

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

65 mA

16777216 words

1,2,4,8,FP

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

-25 Cel

MATTE TIN

BOTTOM

S-PBGA-B54

1

111 MHz

Not Qualified

268435456 bit

e3

.00001 Amp

1,2,4,8

7 ns

K4M281633H-BL1L

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

4096

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

8388608 words

1,2,4,8,FP

COMMON

3/3.3

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX16

8M

-25 Cel

MATTE TIN

BOTTOM

S-PBGA-B54

1

111 MHz

Not Qualified

134217728 bit

e3

.0005 Amp

1,2,4,8

7 ns

K4S561632J-UL600

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

110 mA

16777216 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

166 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

1,2,4,8

22.22 mm

5 ns

K4S56323LF-HS1L

Samsung

SYNCHRONOUS DRAM

OTHER

90

FBGA

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

150 mA

8388608 words

1,2,4,8,FP

COMMON

2.5

2.5

32

GRID ARRAY, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

R-PBGA-B90

111 MHz

Not Qualified

268435456 bit

.0005 Amp

1,2,4,8

7 ns

K4S643232H-TC500

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

86

TSSOP

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

2097152 words

YES

3.3

32

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

2MX32

2M

0 Cel

DUAL

1

R-PDSO-G86

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

30

240

22.22 mm

4.5 ns

K4S641632B-TC1LT0

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

6 ns

K4M56323PG-HG900

Samsung

SYNCHRONOUS DRAM

OTHER

90

VFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

140 mA

8388608 words

1,2,4,8,FP

YES

COMMON

1.8

1.8

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-25 Cel

BOTTOM

1

R-PBGA-B90

3

1.95 V

1 mm

111 MHz

8 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

.0003 Amp

1,2,4,8

13 mm

7 ns

K4S561632J-UL500

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

110 mA

16777216 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

DUAL

1

R-PDSO-G54

3

3.6 V

1.2 mm

200 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

260

.002 Amp

1,2,4,8

22.22 mm

4.5 ns

K4S641632D-TC1HT

Samsung

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

4194304 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G54

100 MHz

Not Qualified

67108864 bit

e0

.001 Amp

1,2,4,8

6 ns

K4M28163LH-BF1HT

Samsung

SYNCHRONOUS DRAM

OTHER

54

FBGA

4096

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

120 mA

8388608 words

1,2,4,8,FP

COMMON

2.5

2.5

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX16

8M

-25 Cel

MATTE TIN

BOTTOM

S-PBGA-B54

1

111 MHz

Not Qualified

134217728 bit

e3

.0005 Amp

1,2,4,8

7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.